Influence of Surface Preparation Prior to Thermal Nitridation on the Electrical Characteristics of Silicon Nitride Films Deposited on Polycrystalline Silicon Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Viju K. Mathews ◽  
Randhir P.S. Thakur ◽  
Akram Ditali ◽  
Pierre C. Fazan
Keyword(s):  
Silicon Nitride ◽  
Polycrystalline Silicon ◽  
Dielectric Breakdown ◽  
Silicon Film ◽  
Surface Preparation ◽  
Silicon Dioxide Film ◽  
Time Dependent Dielectric Breakdown ◽  
Pre Treatment ◽  
Thermal Nitridation ◽  
Polycrystalline Silicon Films

ABSTRACTRapid thermal nitridation of the polycrystalline silicon film prior to the deposition of the silicon nitride dielectric film has been shown to be very effective in improving the dielectric characteristics for thin films. The changes at the polysilicon-silicon nitride interface has been further investigated using an in-situ clean process. This pre-treatment reduces the oxygen levels at the interface and improves the time dependent dielectric breakdown. The leakage current increases slightly due to the thinning of the silicon dioxide film at the interface.

Characterization of Oxide Etching and Wafer Cleaning using Vapor-Phase Anhydrous HF and Ozone

1997 ◽  
Vol 470 ◽  
Author(s):  
Barbara Froeschle ◽  
Lutz Deutschmann ◽  
Anton J. Bauer ◽  
Edmund P. Burte
Keyword(s):  
Vapor Phase ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Uv Light ◽  
Reference Sample ◽  
Surface Preparation ◽  
Time Dependent Dielectric Breakdown ◽  
Wafer Cleaning ◽  
Phase Surface ◽  
Cluster Tool

ABSTRACTA cleaning process using anhydrous HF (AHF)/methanol and ozone is carried out in a STEAG-AST Vapor Phase Cleaning module (VPC). This module is integrated in a state-of-the-art cluster tool also consisting of a STEAG-AST Rapid Thermal Oxidation module (RTO). The dependence of AHF vapor phase etch rate of thermally grown silicon dioxide on different process parameters, such as etch time, AHF-flow, and temperature is evaluated. The optimized etch process is found to be at a temperature of 40°C and at a pressure of 50 mbar for this VPC module. Using the above etch parameters various combinations of vapor phase surface preparation chemistries combining AHF etching and ozone/UV cleaning are evaluated.To demonstrate the feasibility of this cluster tool for advanced gate dielectric formation, 4.0 nm thin oxide is grown directly after the cleaning in the RTO module without breaking the vacuum. Time dependent dielectric breakdown results for oxides pre-oxidation-cleaned in AHF, and in AHF followed by ozone are compared to a reference sample without any dry pre-oxidation cleaning. It can be shown, that the cleaning in AHF with a subsequent ozone step at 200°C under UV light leads to improved breakdown characteristics compared to AHF/methanol cleanings without such subsequent ozone/UV step or conventional wet cleaning using HF-Dip.

A Large Grain Polycrystalline Silicon Film for Resistive Bolometers

2003 ◽  
Vol 785 ◽  
Author(s):  
Tae-Sik Kim ◽  
Hee Chul Lee
Keyword(s):  
Polycrystalline Silicon ◽  
Defect Density ◽  
Silicon Film ◽  
Seed Selection ◽  
Ion Channeling ◽  
Noise Characteristics ◽  
Sensing Material ◽  
Average Grain Size ◽  
Polysilicon Films ◽  
Polycrystalline Silicon Films

ABSTRACTLarge grain polycrystalline silicon films as a sensing material for infrared bolometers have been proposed and investigated. Using a seed selection through ion channeling technique, we have successfully increased the average grain size of polysilicon films up to 1670Å. The achieved TCR value at 20°C and grain boundary defect density of the film are found to be as high as -2.46%/K for a resistivity of 30Ωcm and to be about 1.752×1012/cm2, respectively. From the measurement of noise characteristics of the film, the value of k, 1/f noise parameter, is calculated to be 1.35×10-9. As a result, the estimated detectivity is found to be 5.6×108cmHz1/2/W.

Redistribution of Implanted Species in Polycrystalline Silicon Films on Silicon Substrate

2007 ◽  
Vol 264 ◽  
pp. 7-12 ◽  
Author(s):  
F. Salman ◽  
J. Arnold ◽  
Peng Zhang ◽  
Guan Gyu Chai ◽  
Fred A. Stevie ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Secondary Ion Mass Spectrometry ◽  
Silicon Film ◽  
Silicon Films ◽  
Si Substrates ◽  
Poly Silicon ◽  
Ar Gas ◽  
Polycrystalline Silicon Films ◽  
Secondary Ion ◽  
Diffusion Behaviors

Redistributions of implanted species after thermal annealing in polycrystalline silicon (poly-silicon) were studied by secondary ion mass spectrometry. Ten different elements were implanted into poly-silicon films grown on Si substrates. The implanted energies were chosen such that the expected ion range is within the poly-silicon film. Thermal anneals were carried out at temperatures between 300°C and 1000°C in flowing high purity Ar gas. Three different diffusion behaviors have been observed for these elements. For Be, Na, Ga, and Cr, most of the implanted ions diffused out to the surface of the poly-silicon film after anneal at 1000°C. For K, Ca, Ti, and Ge, the impurity ions diffused deeper into the bulk after anneal at 1000°C. For Cl and Mn ions, the concentration distributions became narrower when annealed at high temperatures.

Piezoresistive and Mechanics Properties of Nanopolycrystalline Silicon Film Materials

2013 ◽  
Vol 380-384 ◽  
pp. 4237-4240 ◽  
Author(s):  
Xue Bin Lu ◽  
Lin Hai Cui ◽  
Hai Huang
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Test System ◽  
Suitable Material ◽  
Pressure Chemical ◽  
Polycrystalline Silicon Films ◽  
Different Thickness ◽  
Polycrystalline Silicon Film

The polycrystalline silicon films with same doping concentration and different thickness were prepared by low pressure chemical vapor deposition. The gauge factors of the films samples were tested, the results show that the piezoresistive properties of nanopolycrystalline silicon film (NPSF) exceed that of common polycrystalline silicon film (CPSF). To apply the NPSF to MEMS piezoresistive device effectively, the Youngs modulus of the NPSF were tested by in-situ nanomechanical test system, the results show that the Youngs modulus of the NPSF is about between 155GPa and 158GPa. It is very useful to investigate the piezoresistive and mechanics properties of NPSF, the results show that NPSF is a suitable material in MEMS piezoresistive device.

Fabrication and Analysis of Nano-Aluminum-Induced Low-Temperature Polycrystalline Silicon Film

2008 ◽  
Vol 594 ◽  
pp. 96-103
Author(s):  
Hsiao Yeh Chu ◽  
Ming Hang Weng ◽  
Ru Yuan Yang ◽  
Chien Wei Huang ◽  
Chien Cheng Liu
Keyword(s):  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Uniform Size ◽  
Average Grain Size ◽  
Current Characteristics ◽  
Polycrystalline Silicon Films ◽  
Induced Crystallization ◽  
Polycrystalline Silicon Film

In this paper, we successfully fabricate polycrystalline silicon films with very large and uniform-size grains by the method of nanometer thick aluminum induced crystallization (nano-AIC) on the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD). The effect of annealing ramp-up time is discussed. Four different annealing ramp-up time, 1,5,10,20 hours, are tested. The results show the maximum average grain size obtained in this paper is about 60 μm under the condition of 20-hour annealing ramp-up time. The nano-AIC specimens show a much better leakage current characteristics than the AIC specimens since the Al layer in AIC process is much thicker and was not removed completely from the polycrystalline silicon film during Al wet selective etching process.

The Effect of Substrate Temperature on the Crystallinity and Stress of Ion Beam Sputtered Silicon on Various Substrates

1994 ◽  
Vol 338 ◽  
Author(s):  
Cynthia G. Madras ◽  
L. Goldman ◽  
P.Y. Wong ◽  
I.N. Miaoulis
Keyword(s):  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Silicon Film ◽  
Silicon Films ◽  
Thermally Stable ◽  
Ion Beam Sputtering ◽  
Wide Range ◽  
Polycrystalline Silicon Films

ABSTRACTAmorphous and polycrystalline silicon films are commonly used in a wide range of microelectronic and optical devices. Polycrystalline silicon is conventionally deposited by chemical vapor deposition (CVD) at temperatures in excess of 600°C. At these high deposition temperatures, thermal diffusion of dopants and thermally induced chemical reactions may occur within the substrate or device. Also, substrates with low melting temperatures such as germanium, may undergo irreversible deformation. In the present study, ion beam sputtering has been shown to enable the deposition of a stable polycrystalline silicon film on germanium as well as on silicon and glass substrates at temperatures as low as 350-400°C. The crystallization properties of silicon on the different substrate surfaces is reported. Crystallinity of the ion beam sputtered silicon films as a function of deposition temperature and substrate type is measured by X-Ray diffraction. These polysilicon films are shown to be thermally stable, have randomly oriented crystals, and have good adhesion to the substrates despite high compressive deposition stresses ranging from 700MPa to 1000MPa. Magnetron sputtered silicon films deposited on substrates in the same temperature range produced only completely amorphous films, with lower stresses and which are also thermally stable. This study demonstrated the feasibility of depositing extremely hard polycrystalline silicon films on germanium and other substrates by means of physical vapor deposition at temperatures as low as 350°C.

EELS characterization of “Smut” layer films on steel surface prepared for chrome plating by anodic etching

1995 ◽  
Vol 53 ◽  
pp. 538-539
Author(s):  
E Y. Wang ◽  
J. T. Cherian ◽  
A. Madsen ◽  
R. M. Fisher
Keyword(s):  
Steel Surface ◽  
Surface Preparation ◽  
Treatment Method ◽  
Chrome Plating ◽  
Transmission Electron ◽  
Alloy Steels ◽  
Pre Treatment ◽  
Hard Chrome ◽  
Electron Energy Loss

Many steel parts are electro-plated with chromium to protect them against corrosion and to improve their wear-resistance. Good adhesion of the chrome plate to the steel surface, which is essential for long term durability of the part, is extremely dependent on surface preparation prior to plating. Recently, McDonnell Douglas developed a new pre-treatment method for chrome plating in which the steel is anodically etched in a sulfuric acid and hydrofluoric acid solution. On carbon steel surfaces, this anodic pre-treatment produces a dark, loosely adhering material that is commonly called the “smut” layer. On stainless steels and nickel alloys, the surface is only darkened by the anodic pre-treatment and little residue is produced. Anodic pre-treatment prior to hard chrome plating results in much better adherence to both carbon and alloy steels.We have characterized the anodic pre-treated steel surface and the resulting “smut” layer using various techniques including electron spectroscopy for chemical analysis (ESCA) on bulk samples and transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS) on stripped films.

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