Time Dependent Diffusion of P-Type Dopants in Gallium Arsenide

1993 ◽  
Vol 300 ◽  
Author(s):  
H.G. Robinson ◽  
K.S. Jones ◽  
M.D. Deal ◽  
C.J. Hu
Keyword(s):  
Dose Rate ◽  
Dislocation Loops ◽  
Transient Effects ◽  
Simulation Tools ◽  
Transient Diffusion ◽  
Controlled Conditions ◽  
Physically Based ◽  
P Type ◽  
Dopant Redistribution ◽  
And Diffusion

ABSTRACTThe diffusion of implanted p-type dopants in GaAs often exhibits transient effects during annealing. This diffusion can greatly affect device performance and must be understood in order to create accurate, physically based process modeling simulation tools for compound semiconductors. The transient diffusion is believed to be related to defects created during implantation, but a direct correlation between implant damage and dopant redistribution has been difficult to establish. Results are presented in this paper of experiments designed to gain insights into the fundamental mechanisms underlying the relationship between defects and diffusion. Many anomalies in previous data are the result of implanting dopants under poorly controlled conditions, particularly implant dose rate and temperature. Special care was taken in this work to ensure that the implants were performed under well controlled conditions. Al was co-implanted with Mg and Be to study the effect of implant damage without affecting the position of the Fermi level. A correlation was found between the initial transient diffusion observed in low dose Be implants and the presence of dislocation loops. This may present a viable method for suppressing diffusion of implanted Be. SIMS profiles of Mg and Al co-implants were anomalous and difficult to interpret. Cap failure, dopant segregation to the surface and/or defects may be responsible for the discrepancies in the data. P-type doping appears to stabilize dislocation loops, probably by increasing the concentration of positively charged Ga interstitials. RBS measurements of implanted Mg indicates a link between damage production, implant dose rate, and diffusion. This result agrees with previous work on damage production in Si implanted GaAs.

Effects of diffusion temperature and diffusion time on fabrication of Na-diffused p-type ZnO thin films

2012 ◽  
Vol 80 ◽  
pp. 175-177 ◽  
Author(s):  
Huibin Liu ◽  
Xinhua Pan ◽  
Ping Ding ◽  
Zhizhen Ye ◽  
Haiping He ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Time ◽  
Zno Thin Films ◽  
Diffusion Temperature ◽  
P Type ◽  
And Diffusion

scholarly journals NOISE AND DIFFUSION IN p-TYPE SILICON

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-165-C4-168
Author(s):  
J. P. NOUGIER ◽  
A. MOATADID ◽  
J. C. VAISSIERE
Keyword(s):  
Type Silicon ◽  
P Type ◽  
And Diffusion

scholarly journals Limiting the Oxidation of WS2 Nanostructures by Oleylamine Surface Passivation for Room Temperature NH3 Sensing

2020 ◽  
Author(s):  
Siziwe Gqoba ◽  
Rafael Rodrigues ◽  
Sharon Lerato Mphahlele ◽  
Zakhele Ndala ◽  
Mildred Airo ◽  
...  
Keyword(s):  
Relative Humidity ◽  
Room Temperature ◽  
Surface Passivation ◽  
Electrical Response ◽  
Prolonged Incubation ◽  
P Type ◽  
2D Nanosheets ◽  
Type Response ◽  
And Diffusion ◽  
Hierarchical Morphology

Oleylamine capped WS2 nanostructures were successfully formed at 320 °C via a relatively simple colloidal route. SEM and TEM analyses showed that the 3D nanoflowers that were initially formed disintegrated into 2D nanosheets after prolonged incubation. XPS and XRD analyses confirmed oxidation of WS2 into WO3. Sensors based on these oleylamine capped WS2 nanoflowers and nanosheets still showed a change in electrical response towards various concentrations of NH3 vapour at room temperature in a 25% relative humidity background despite the oxidation. The nanoflowers exhibited n-type response while the nanosheets displayed a p-type response towards NH3 exposure. The nanoflower based sensors showed better response to NH3 vapour exposure than the nanosheets. The sensors showed a good selectivity towards NH3 relative to acetone, ethanol, chloroform and toluene. Meanwhile, a strong interference of humidity to the NH3 response was displayed at high relative humidity levels. The results demonstrated that oleylamine limited the extent of oxidation of WS2 nanostructures. The superior sensing performance of the nanoflowers can be attributed to their hierarchical morphology which enhances the surface area and diffusion of the analyte.

Type II Dislocation Loops and their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-ray Diffraction

1995 ◽  
Vol 378 ◽  
Author(s):  
R. H. Thompson ◽  
V. Krishnamoorthy ◽  
J. Liu ◽  
K. S. Jones
Keyword(s):  
High Resolution ◽  
Type Ii ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Empirical Constant ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Measured Strain ◽  
P Type

AbstractP-type (100) silicon wafers were implanted with 28Si+ ions at an energy of 50 keV and to doses of 1 × 1015, 5 × 1015 and 1 × 1016 cm−2, respectively, and annealed in a N2 ambient at temperatures ranging from 700°C to 1000°C for times ranging from 15 minutes to 16 hours. The resulting microstructure consisted of varying distributions of Type II end of range dislocation loops. The size distribution of these loops was quantified using plan-view transmission electron microscopy and the strain arising from these loops was investigated using high resolution x-ray diffraction. The measured strain values were found to be constant in the loop coarsening regime wherein the number of atoms bound by the loops remained a constant. Therefore, an empirical constant of 7.7 × 10−12 interstitial/ppm of strain was evaluated to relate the number of interstitials bound by these dislocation loops and the strain. This value was used successfully in estimating the number of interstitials bound by loops at the various doses studied provided the annealing conditions were such that the loop microstructure was in the coarsening or dissolution regime.

Measuring Diffusion Lengths in Epitaxial Silicon by Surface Photovoltage

1995 ◽  
Vol 386 ◽  
Author(s):  
John Lowell ◽  
Valerie Wenner ◽  
Damon Debusk
Keyword(s):  
Transition Metals ◽  
Optical Filters ◽  
Surface Photovoltage ◽  
Epitaxial Layers ◽  
Device Performance ◽  
Optical Surface ◽  
Epitaxial Silicon ◽  
Type Silicon ◽  
P Type ◽  
And Diffusion

ABSTRACTIn CMOS, the use of epitaxial layers for prevention of latch-up in logic technologies is well-known and pervasive. One of the crucial parameters is the amount of metallic contamination due to transition metals such as Fe in the epi since this phenomena effects both device performance and quality. However, the ability to measure this parameter on product material is not generally available due to inherent problems with most known methods. The limitation of traditional surface photovoltage is that the deep optical penetration of over a hundred microns is well-beyond the depth of most epitaxial layers and does not accurately profile the epitaxial region [1]. In this paper we report on the application of optical surface photovoltage (SPV) using a set of ultra-shallow optical filters to both quantify and qualify as-grown epitaxial layers on CZ P-type silicon. We believe that a non-contact, SPV measurement of Fe concentration and diffusion lengths within an epitaxial region has not been previously reported.

Incorporation and Diffusion of P-Type Dopants for Metal Organic Vapor Phase Epitaxy

1988 ◽  
Vol 144 ◽  
Author(s):  
M. A. Tischler ◽  
T. F. Kuech
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Electrical Characterization ◽  
Bipolar Transistors ◽  
Organic Vapor ◽  
Dopant Profile ◽  
Metal Organic ◽  
Initial Placement ◽  
P Type ◽  
And Diffusion

ABSTRACTThe control of p-type dopants is very important in producing high performance minority carrier devices such as heterojunction bipolar transistors (HBT) and lasers. In this study, an electrical characterization technique is described which is very sensitive to the p-type dopant profile in a heterojunction. Both the placement of the dopant, i.e. the as-grown profile, and thermal diffusion effects have been investigated. The factors which control the initial placement and subsequent diffusion of the dopant species have been determined and used to produce device-quality GaAs/Al0.30Ga0.70As p+/n heterojunctions.

INFLUENCE OF MECHANICAL STRESS IN A MULTILAYER STRUCTURE ON SPATIAL DISTRIBUTION OF DOPANTS IN IMPLANTED-JUNCTION AND DIFFUSION-JUNCTION RECTIFIERS

2010 ◽  
Vol 24 (09) ◽  
pp. 867-895 ◽  
Author(s):  
E. L. PANKRATOV
Keyword(s):  
Diffusion Coefficient ◽  
Spatial Distribution ◽  
Mechanical Stress ◽  
Multilayer Structure ◽  
Spatial Dimensions ◽  
Dopant Redistribution ◽  
Additional Reduction ◽  
And Diffusion ◽  
Junction Rectifiers

The influence of mechanical stress in a multilayer structure on spatial distribution of dopants in implanted-junction and diffusion-junction rectifiers, which was produced in the structure has been analyzed. It is shown that the stress leads to additional reduction of spatial dimensions of the p–n junction in comparison with the reduction — a result of inhomogeneity — of the diffusion coefficient of dopant and other parameters of dopant redistribution (see, for example, Refs. 1–3).

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