UHV Preparation and In-Situ Surface Analysis of MNFE/Nife Exchange Structures: Interfacial Impurity Incorporation

1993 ◽  
Vol 313 ◽  
Author(s):  
Susan L. Cohen ◽  
John M. Baker ◽  
Michael A. Russak ◽  
Gerald J. Scilla ◽  
Cherngye Hwang ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Photoelectron Spectroscopy ◽  
Exchange Coupling ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Impurity Incorporation ◽  
X Ray ◽  
Manufacturing Applications ◽  
Analysis System

ABSTRACTMnFe/NiFe exchange structures have been prepared in an ultra-high vacuum sputtering/surface analysis system. Controlled introduction of residual gas impurities such as O2 and H2O at the MnFe/NiFe interface is studied by in-situ x-ray photoelectron spectroscopy (XPS) and the exchange structures are magnetically characterized. Due to the extreme reactivity of the NiFe surface towards O2, the exchange coupling is severely degraded by only small exposures of this molecule to the NiFe surface. In contrast, H2O does not oxidize the NiFe surface and therefore can be tolerated in greater quantities in the sputtering chamber without detrimental loss of exchange. This understanding of the basic surface chemistry of the MnFe and NiFe surfaces can lead to improved sputtering practices in actual manufacturing applications.

Electron induced surface reactions of (η5-C5H5)Fe(CO)2Mn(CO)5, a potential heterobimetallic precursor for focused electron beam induced deposition (FEBID)

2018 ◽  
Vol 20 (11) ◽  
pp. 7862-7874 ◽  
Author(s):  
Ilyas Unlu ◽  
Julie A. Spencer ◽  
Kelsea R. Johnson ◽  
Rachel M. Thorman ◽  
Oddur Ingólfsson ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Electron Beam ◽  
Photoelectron Spectroscopy ◽  
Surface Reactions ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray ◽  
Electron Beam Induced Deposition

Electron-induced surface reactions of (η5-C5H5)Fe(CO)2Mn(CO)5were exploredin situunder ultra-high vacuum conditions using X-ray photoelectron spectroscopy and mass spectrometry.

Ultra-High Vacuum Grazing Incidence Small Angle X-Ray Scattering Camera for in Situ Surface Analysis

1993 ◽  
Vol 37 ◽  
pp. 413-418
Author(s):  
Joanne Levine Parrill ◽  
Jerome B. Cohen ◽  
Yip-Wah Chung
Keyword(s):  
Surface Analysis ◽  
Small Angle ◽  
High Vacuum ◽  
Grazing Incidence ◽  
Ultra High Vacuum ◽  
X Ray ◽  
X Ray Scattering ◽  
Position Sensitive ◽  
Ray Scattering

AbstractAn ultra-high vacuum chamber designed for in situ grazing incidence small angle x-ray scattering (GISAXS) surface analysis is described. Unique features of this equipment are the precision rotary feedthrough for angular alignment of the sample, the sample heating design, the Be window arrangement, and the compatibility of this chamber with both a rotating anode and a synchrotron beamline. This chamber was used as part of a GISAXS camera utilizing a 18 kW Rigaku rotating anode, pin-hole collimation, and a position sensitive detector. The resolution of this camera was 0.007 A-1 with a 1.4 mm wide beamstop and CuKα

XPS, AES and Leed Studies of The Interaction Between The Si(100) 2×1 Surface and Cadmium Deposited at Room Temperature

1995 ◽  
Vol 382 ◽  
Author(s):  
S. Santucci ◽  
S. Di Nardo ◽  
L. Lozzi ◽  
M. Passacantando ◽  
P. Picozzi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Early Stage ◽  
High Vacuum ◽  
Amorphous Structure ◽  
Ultra High Vacuum ◽  
Energy Position ◽  
X Ray

ABSTRACTVery thin films of cadmium, with a mean thickness between 1 Å and 500 Å, were deposited by thermal evaporation in ultra-high-vacuum on a Si(100) 2×1 surface held at room temperature. In situ X-ray Photoelectron Spectroscopy and Auger Electron Spectroscopy were performed in order to investigate the interaction between the silicon substrate and the deposited cadmium. In samples with deposited mean thickness up to 3 Å, cadmium and silicon are found to be strongly interacting. In fact both XPS and AES spectra show evident changes in shape and energy position leading to the conclusion that a chemical compound between Cd and Si is formed. No diffusion between cadmium and silicon is observed, so the cadmium atoms deposited after the first 3 Å show a bulk character. The analysis of the first derivative intensity of the Si L23VV and Cd M5N45N45 Auger signals, varying the amount of deposited Cd, indicates the formation of islands in the early stage of the Cd growth. These islands show an amorphous structure as observed by using the LEED spectroscopy.

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Fundamental study of the interaction of Ti atoms with spruce surfaces

Holzforschung ◽  
2007 ◽  
Vol 61 (5) ◽  
pp. 523-527 ◽  
Author(s):  
Lothar Klarhöfer ◽  
Florian Voigts ◽  
Dominik Schwendt ◽  
Burkhard Roos ◽  
Wolfgang Viöl ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Strong Interactions ◽  
Titanium Oxide Film ◽  
Fundamental Study ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Atoms

Abstract Metastable induced electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were applied to study the interaction of Ti metal atoms with spruce surfaces. Spruce surfaces were produced by planing splints from a spruce bar. Ti atoms were adsorbed from a metal evaporator under ultra-high vacuum conditions. The amount adsorbed corresponds to 10 monolayer equivalents. Strong interactions between the spruce surface and metals atoms occurred. Impinging Ti atoms were oxidized by the spruce surface. No Ti agglomeration or particle formation was observed. The surface was smoothed by the Ti applied and was completely covered by a titanium oxide film.

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