Growth Mode of CeO2 on Si Surface

1993 ◽  
Vol 318 ◽  
Author(s):  
Toyohiro Chikyow ◽  
Lee Tye ◽  
Nadia A. El-Masry ◽  
Salah M. Bedair
Keyword(s):  
High Vacuum ◽  
Interface Structure ◽  
Ultra High Vacuum ◽  
Voltage Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Capacitance Voltage ◽  
Deposited Film

ABSTRACTThe interface structure and electrical properties of CeO2/Si (111) grown by laser ablation in ultra high vacuum was investigated by high resolution transmission electron microscopy .Auger electron spectroscopy and capacitance-voltage measurement. The deposited film was single crystalline CeO2 as indicated by RHEED and x-ray diffraction observations. However, during the deposition, a reaction between CeO2 and Si occurred at the interface. This reaction resulted in the formation of an oxygen deficient amorphous CeOX layer and a S1O2 layer. Post annealing in oxygen atmosphere caused the disappearance of the amorphous CeOX and the regrowth of crystalline CeO2. The SiO2 thickness was also increased by annealing. The modified structure of CeO2/SiO2/Si showed a higher break down valtage, compared with the as-deposited sample. From these results, a combination of CeO2 and SiO2 can have a great potential for SOI structure.

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

Microstructure Characterization of the Reaction Interface between CBN Grain and Titanium-Deposited Film

2012 ◽  
Vol 538-541 ◽  
pp. 166-171
Author(s):  
Wen Feng Ding ◽  
Yang Min Liang ◽  
Jian He ◽  
Li Tang ◽  
Jie Yu ◽  
...  
Keyword(s):  
Heating Temperature ◽  
Cubic Boron Nitride ◽  
High Vacuum ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
X Ray ◽  
Energy Dispersion Spectrometer ◽  
Heat Treated ◽  
Deposited Film

Cubic boron nitride (CBN) abrasive grains with surface titanium-deposited film were heat-treated during 550-950°C for 60 min under high vacuum circumstance. Detailed interfacial compounds analysis by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersion spectrometer (EDS), differential thermal analysis (DTA) indicates that the interfacial reactions are much dependent on the heating temperature to some extents, and the reaction products, TiN, TiB2 and TiB chiefly form the network structure. In particular, at 950°C the transition layers with excellent performance, CBN/TiB2/TiB/(TiB+TiN)/TiN/CBN, is realized.

Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

1998 ◽  
Vol 533 ◽  
Author(s):  
P. M. Mooney ◽  
J. O. Chu ◽  
J. A. Ott ◽  
J. L. Jordan-Sweet ◽  
B. S. Meyerson ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Wafer Cleaning ◽  
Device Structures

AbstractSi/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-;diffusion of Ge from the Si1-xGex, quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 °C

Microstructure Characterization of Si/C Multilayer Thin Films

2013 ◽  
Vol 743-744 ◽  
pp. 910-914
Author(s):  
Ting Han ◽  
Geng Rong Chang ◽  
Yun Jin Sun ◽  
Fei Ma ◽  
Ke Wei Xu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Twin Defects ◽  
Modulation Ratio

Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100 for 1h. X-ray diffraction (XRD), Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films. For the case of Si/C modulation ratio smaller than 1,interlayer diffusion is evident, which promotes the formation of α-SiC during thermal annealing. If the modulation ratio is larger than 1, the Si sublayers are partially crystallized, and the thicker the Si sublayers are, the crystallinity increases. To be excited, brick-shaped nc-Si is directly observed by HRTEM. The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects. The results are instructive in the application of solar cells.

Investigation of Ti3SiC2 MAX Phase Formation onto N-Type 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 845-848 ◽  
Author(s):  
Alexia Drevin-Bazin ◽  
Jean François Barbot ◽  
Thierry Cabioc’h ◽  
Marie France Beaufort
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
High Vacuum ◽  
Max Phase ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Transmission Electron

In this study, investigations on MAX phase Ti3SiC2 formation to n-type 4H-SiC substrates and its ohmic-behaved are reported. Ti-Al layers were deposited onto SiC substrates at room temperature by magnetron sputtering in high vacuum system. Thermal annealing at 1000°C in Ar atmosphere were performed to allow interdiffusion processes. X-ray diffraction and High Resolution Transmission Electron Microscopy reveal that a Ti3SiC2 contact, in perfect epitaxy with 4H-SiC substrate, is so-obtained. In situ annealing experiment underlines the evolution of Ti-Al contact microstructure versus temperature. The evolution of contact system from Schottky to Ohmic behaved is observed by I-V measurements for annealing temperatures larger than 700°C.

Thermodynamically Stable Conducting Films of Intermetallic PtGa2 on Gallium Arsenide

1988 ◽  
Vol 144 ◽  
Author(s):  
Larry P. Sadwick ◽  
Kang L. Wang ◽  
David K. Shuh ◽  
Young K. Kim ◽  
R. Stanley Williams
Keyword(s):  
Gallium Arsenide ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Suitable Temperature

ABSTRACTThe first epitaxial platinum gallium two (PtGa2) films have been grown on gallium arsenide (GaAs) (100) by co-evaporation of the elements under ultra-high vacuum conditions. An electron beam evaporator and a Knudsen cell were used to produce the platinum and gallium beams, respectively. The resulting films and bulk PtGa2 have been characterized by x-ray diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. The data confirm the PtGa2 stoichiometry and crystal structure of the films, and demonstrate their chemical stability on GaAs (100). This study supports the contention that PtGa2 can be a suitable, temperature stable contact material on GaAs substrates.

Transmission Electron Microscopy and X-Ray Diffraction Analysis of Aluminum-Induced Crystallization of Amorphous Silicon in α-Si:H/Al and Al/α-Si:H Structures

2005 ◽  
Vol 11 (2) ◽  
pp. 133-137 ◽  
Author(s):  
Ram Kishore ◽  
C. Hotz ◽  
H.A. Naseem ◽  
W.D. Brown
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
High Vacuum ◽  
Radiative Heating ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Xrd Studies

Solid phase crystallization of plasma-enhanced chemical-vapor-deposited (PECVD) amorphous silicon (α-Si:H) in α-Si:H/Al and Al/α-Si:H structures has been investigated using transmission electron microscopy (TEM) and X-ray diffraction (XRD). Radiative heating has been used to anneal films deposited on carbon-coated nickel (Ni) grids at temperatures between 200 and 400°C for TEM studies. α-Si:H films were deposited on c-Si substrates using high vacuum (HV) PECVD for the XRD studies. TEM studies show that crystallization of α-Si:H occurs at 200°C when Al film is deposited on top of the α-Si:H film. Similar behavior was observed in the XRD studies. In the case of α-Si:H deposited on top of Al films, the crystallization could not be observed at 400°C by TEM and even up to 500°C as seen by XRD.

Raman scattering and x-ray diffraction characterization of amorphous semiconductor multilayer interfaces

1986 ◽  
Vol 1 (3) ◽  
pp. 468-475 ◽  
Author(s):  
D.D. Allred ◽  
J. Gonzalez-Hernandez ◽  
O.V. Nguyen ◽  
D. Martin ◽  
D. Pawlik
Keyword(s):  
Raman Spectra ◽  
High Vacuum ◽  
Amorphous Semiconductor ◽  
Ultra High Vacuum ◽  
Chemical Bonds ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sharp Interfaces ◽  
Deposition Techniques

Raman spectroscopy (RS) and low-angle x-ray diffraction (LAXRD) have been used to characterize semiconductor multilayer interfaces. In the present study a model for Raman spectra of multilayers is developed and applied to the specific case of the interfaces of a-Si/a-Ge multilayers. Quantification of the “blurring” of interfaces is possible because peak heights in the Raman spectra of thin films are proportional to the number of scatterers, thus RS is capable of directly “counting” the total number of chemical bonds of a given type in the film. Multilayers, prepared by various deposition techniques, are compared. The relative roles of LAXRD and RS in investigating interfaces are contrasted. Several a-Si/a-Ge multilayers deposited by ultra-high vacuum (UHV) evaporation (MBD) are found to exhibit very regular periodicities and exceptionally sharp interfaces (<1.0 Å intermixing).

scholarly journals Nanostructure and Optical Property Investigations of SrTiO3 Films Deposited by Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 138
Author(s):  
Da Xu ◽  
Yafei Yuan ◽  
Huanfeng Zhu ◽  
Ling Cheng ◽  
Chunmin Liu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Band Gap Energy ◽  
Optical Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lorentz Oscillator ◽  
Transmission Electron ◽  
Deposited Film ◽  
Srtio3 Film

Strontium titanate thin films were deposited on a silicon substrate by radio-frequency magnetron sputtering. The structural and optical properties of these films were characterized by X-ray diffraction, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and spectroscopic ellipsometry, respectively. After annealing at 600–800 °C, the as-deposited films changed from amorphous to polycrystalline. It was found that an amorphous interfacial layer appeared between the SrTiO3 layer and Si substrate in each as-deposited film, which grew thicker after annealing. The optical parameters of the SrTiO3 film samples were acquired from ellipsometry spectra by fitting with a Lorentz oscillator model. Moreover, we found that the band gap energy of the samples diminished after thermal treatment.

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