Solid-State Reactions of a 3D-Transition Metal-Ti/Al2O3 System

1993 ◽  
Vol 318 ◽  
Author(s):  
Seiichi Suenaga ◽  
Miho Koyama ◽  
Shinji Arai ◽  
Masako Nakahashi
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Transition Metal ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Intermediate Phase ◽  
Solid State Reactions ◽  
Bilayer Film ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTAn interfacial mechanism for reactions between a Me-Ti thin film (Me=3d transition metals; Cu,Ni) and an A12O3 substrate is newly proposed. It has been clarified that Me3Ti3O (diamond cubic of Fd3m), which is formed as an intermediate phase in both the Cu-Ti/Al2O3 and Ni-Ti/Al2O3 systems, is responsible for the bonding between Me and A12O3. The solid-state reactions of the Me-Ti bilayer film/Al2O3 system were studied with Auger electron spectroscopy (AES) and X-ray diffraction (XRD) to clarify the interfacial reaction between Me-Ti and the A12O3 substrate. Me3Ti3O was observed at the interface between A12O3 and Me after annealing. Me3Ti3O was formed by oxidation of the Me-Ti compounds. The oxygen which reacted with the Me-Ti compounds has been found to be generated from the reduction of the A12O3 substrate.

Solid-state reactions of the Ag–Cu–Ti thin film–Al2O3 substrate system

1993 ◽  
Vol 8 (8) ◽  
pp. 1805-1811 ◽  
Author(s):  
Seiichi Suenaga ◽  
Miho Koyama ◽  
Shinji Arai ◽  
Masako Nakahashi
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Intermediate Phase ◽  
Solid State Reactions ◽  
X Ray Diffraction ◽  
Al2o3 Substrate ◽  
X Ray ◽  
Sapphire Substrates ◽  
Active Metal ◽  
New Interpretation

A new interpretation of the reaction mechanism between active metal thin-film filler and ceramic substrate is proposed. The authors predict the possibility of prebonding reactions, prior to melting of the filler, at the interface of the system described above. To prove this, solid-state reactions of Ag–Cu–Ti thin films on sapphire substrates have been studied with Auger electron spectroscopy (AES) and x-ray diffraction (XRD). Reaction process and products have been clarified at the temperature just below the melting point of the filler. It is evident that Cu3Ti3O (diamond structure of Fd3m) is formed by the reaction between Cu3Ti and O which results from the reduction of sapphire. It seems that Cu3Ti3O contributes to bonding between metals and sapphire as an intermediate phase.

Gold/Niobium Thin Film Metallizations for GaAs Devices and Circuits

2001 ◽  
Vol 695 ◽  
Author(s):  
Robert Esser ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Devices ◽  
Auger Electron Spectroscopy Depth ◽  
Interdiffusion Coefficients

ABSTRACTA refractory metallization of Au/Nb is proposed for use in first level metallization of GaAs devices. The diffusion and reaction kinetics are explored using sheet resistance measurements, along with X-ray diffraction and Auger electron spectroscopy depth profiling. The interdiffusion coefficients are reported. Diodes are fabricated using Nb/Au metallization and characterized

In situ X-ray diffraction study of thin film Ir/Si solid state reactions

2010 ◽  
Vol 87 (3) ◽  
pp. 258-262 ◽  
Author(s):  
W. Knaepen ◽  
J. Demeulemeester ◽  
D. Deduytsche ◽  
J.L. Jordan-Sweet ◽  
A. Vantomme ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Diffraction Study ◽  
Solid State Reactions ◽  
X Ray Diffraction ◽  
X Ray

Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy

2007 ◽  
Vol 253 (8) ◽  
pp. 3799-3802 ◽  
Author(s):  
S. Abhaya ◽  
G. Amarendra ◽  
S. Kalavathi ◽  
Padma Gopalan ◽  
M. Kamruddin ◽  
...  
Keyword(s):  
Thin Film ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Film System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Film System ◽  
Si Thin Film

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

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