Calibration of the Au Labeling Technique to Measure Vacancy Defects in Si

2000 ◽  
Vol 610 ◽  
Author(s):  
R. Kalyanaraman ◽  
T. E. Haynes ◽  
V. C. Venezia ◽  
D. C. Jacobson ◽  
H.-J. Gossmann ◽  
...  
Keyword(s):  
Vacancy Concentration ◽  
Surface Region ◽  
High Energy ◽  
Calibration Factor ◽  
Medium Energy ◽  
Near Surface ◽  
Vacancy Defects ◽  
Vacancy Clusters ◽  
Projected Range

AbstractIt has been shown recently that Au labeling can be used to profile vacancy-type defects located near half the projected range (½Rp) in MeV-implanted Si. In this work we have quantified the technique by determining the ratio of vacancies annihilated to decrease in the number of Au atoms trapped (calibration factor ‘k’) for the Au labeling technique. The 3 step experiment involved: 1) a high-energy Si-self implant (HEI) followed by an anneal to form stable vacancy clusters, 2) a controlled removal of vacancies via a medium energy Si self implant and interstitial-cluster dissolution anneal, and finally 3) Au labeling to count the change in vacancy concentration in the near surface region (0.1-1.6μm). It is seen that the Au concentration decreases linearly with increasing interstitial injection and the slope of this decrease determined the number of vacancies per trapped Au atom. The value of k was determined to be 1.2±0.2 vacancies per trapped Au atom.

Damage effects produced in the near-surface region of x-cut LiNbO3 by low dose, high energy implantation of nitrogen, oxygen, and fluorine ions

2004 ◽  
Vol 96 (1) ◽  
pp. 242-247 ◽  
Author(s):  
G. G. Bentini ◽  
M. Bianconi ◽  
L. Correra ◽  
M. Chiarini ◽  
P. Mazzoldi ◽  
...  
Keyword(s):  
Low Dose ◽  
Surface Region ◽  
High Energy ◽  
Near Surface ◽  
Fluorine Ions

Application of High Energy Ion Beam on the Control of Boron Diffusion

2003 ◽  
Vol 792 ◽  
Author(s):  
Wei-Kan Chu ◽  
Lin Shao ◽  
Jiarui Liu
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Anomalous Diffusion ◽  
Ion Beam ◽  
Surface Region ◽  
High Energy ◽  
Boron Diffusion ◽  
Defect Engineering ◽  
Projected Range ◽  
Ultrashallow Junction

ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.

scholarly journals A multireflection and multiwavelength residual stress determination method using energy dispersive diffraction

2018 ◽  
Vol 51 (3) ◽  
pp. 732-745 ◽  
Author(s):  
Marianna Marciszko ◽  
Andrzej Baczmański ◽  
Manuela Klaus ◽  
Christoph Genzel ◽  
Adrian Oponowicz ◽  
...  
Keyword(s):  
Residual Stress ◽  
Synchrotron Radiation ◽  
Diffraction Method ◽  
Surface Region ◽  
Grazing Incidence ◽  
High Energy ◽  
Energy Dispersive ◽  
X Rays ◽  
X Ray Diffraction ◽  
Near Surface

The main focus of the presented work was the investigation of structure and residual stress gradients in the near-surface region of materials studied by X-ray diffraction. The multireflection method was used to measure depth-dependent stress variation in near-surface layers of a Ti sample (grade 2) subjected to different mechanical treatments. First, the multireflection grazing incidence diffraction method was applied on a classical diffractometer with Cu Kα radiation. The applicability of the method was then extended by using a white synchrotron beam during an energy dispersive (ED) diffraction experiment. An advantage of this method was the possibility of using not only more than one reflection but also different wavelengths of radiation. This approach was successfully applied to analysis of data obtained in the ED experiment. There was good agreement between the measurements performed using synchrotron radiation and those with Cu Kα radiation on the classical diffractometer. A great advantage of high-energy synchrotron radiation was the possibility to measure stresses as well as thea0parameter andc0/a0ratio for much larger depths in comparison with laboratory X-rays.

Correlation of Electric Parameters Change and Structural Changes Induced in Silicon Systems by Pulsed Magnetic Field Treatment

1993 ◽  
Vol 319 ◽  
Author(s):  
Mark N. Levin ◽  
Vladimir M. Maslovsky
Keyword(s):  
Magnetic Field ◽  
Structural Changes ◽  
Vacancy Concentration ◽  
Surface Region ◽  
Lattice Parameter ◽  
Pulsed Magnetic Field ◽  
Crystal Lattice Parameter ◽  
Free Electrons ◽  
Near Surface ◽  
Electric Parameters

AbstractThe results of comparison investigations of structural and electric parameters changes in silicon systems induced by pulsed magnetic field (MF) treatment (PMFT) are presented for the first time. The characteristics of (PMFT) that can induce considerable parameters changes of the silicon system were determined. Amplitudc of thc magnctic impulscs is 0.1-0.3 MA/m and duration of thc impulscs is 10-30 ms. The investigations were carried out by means of scanning electron microscope (SEM), X-ray diffraction analysis, C-V and DLTS spectroscopies. The PMFT induces the generation of A-centers in the near-surface region of silicon, the changes of the crystal lattice parameter and the concentration of free electrons and results in emergence of an extent structural microdefects in subsurface. The obtained experimental data testifies that PMFT is possible to increase the vacancy concentration at subsurface region of silicon.

Properties of Gallium Disorder and Gold Implants in GaN

2000 ◽  
Vol 647 ◽  
Author(s):  
W. Jiang ◽  
W.J. Weber ◽  
S. Thevuthasan ◽  
V. Shutthanandan
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
High Mobility ◽  
Surface Region ◽  
Intermediate Stage ◽  
Near Surface ◽  
Projected Range ◽  
Implantation Damage ◽  
The Mean ◽  
Fluence Range

AbstractEpitaxial single-crystal GaN films on sapphire were implanted 60° off the <0001> surface normal with 1 MeV Au2+ or 3 MeV Au3+ over a fluence range from 0.88 to 86.2 ions/nm2 at 180 and 300 K. The implantation damage was studied in-situ using 2 MeV He+ Rutherford backscattering spectrometry in channeling geometry (RBS/C). The disordering rate in the near- surface region is faster than at the damage peak. In all cases, results show an intermediate stage of Ga disorder saturation at the damage peak. During the thermal annealing at 870 K for 20 min, some Au implants in GaN diffuse into the amorphized surface region, while the remaining Au atoms distribute around the mean ion-projected-range. These results suggest a high mobility of both Ga defects and Au implants in GaN. Deeper damage implantation by 3 MeV Au3+ indicates that GaN cannot be completely amorphized up to the highest ion fluence (86.2 ions/nm2) applied at 300 K.

scholarly journals Direct Observation of Energy–Momentum Densities in Solids

1996 ◽  
Vol 49 (2) ◽  
pp. 543 ◽  
Author(s):  
E Weigold ◽  
YQ Cai ◽  
SA Canney ◽  
AS Kheifets ◽  
IE McCarthy ◽  
...  
Keyword(s):  
Surface Region ◽  
High Energy ◽  
High Energy Electron ◽  
Free Standing ◽  
Near Surface ◽  
Crystalline Materials ◽  
Electron Momentum ◽  
Electron Momentum Spectroscopy ◽  
Impact Ionisation

Electron momentum spectroscopy (EMS), based on kinematically complete observations of high energy electron impact ionisation events, directly observes energy–momentum dispersion laws and densities of electrons in solids. The valence electronic structure in the near surface region, up to a depth of about 20 Å is probed for thin free-standing films (about 100 Å) by the multiparameter EMS spectrometer at Flinders University. The principles of the measurement are described and its application to the determination of energy–momentum densities in a range of amorphous, polycrystalline and crystalline materials is discussed.

Transient Diffusion Effects of Sb and B In Si Induced by Medium- and High-Energy Implants of Si+ and As+ Ions

1999 ◽  
Vol 568 ◽  
Author(s):  
G. Lulli ◽  
S. Solmi ◽  
M. Bianconi ◽  
E. Napolitani ◽  
A. Carnera
Keyword(s):  
Annealing Temperature ◽  
High Energy ◽  
Enhancement Effect ◽  
Medium Energy ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Transient Diffusion ◽  
Diffusion Effects ◽  
Surface Vacancy ◽  
The One

ABSTRACTIn this work we investigate the influence of defects injected by ions of different mass and energy on the diffusion of B and Sb markers in bulk Si. MeV (Si or As) ions induce Sb transient enhanced diffusion, whose amount increases with increasing the near-surface vacancy supersaturation generated by the knock-on recoil mechanism. The enhancement effect lasts less than 2 h at 800 °C and less than 10 min at 900 °C. At higher (1000 °C) annealing temperature it appears that the influence of extra-interstitials introduced by the implants comes into play, inducing a retardation in Sb diffusion which is larger for the higher close implant. The effect of vacancy supersaturation observed in medium-energy implanted samples is considerably weaker than the one found in high-energy implanted ones. In the case of B marker high-energy implantation induces moderate enhanced diffusion, much smaller than the one observed -after medium-energy implants.

Preparation of cross-sectional samples for near-surface TEM studies

1987 ◽  
Vol 45 ◽  
pp. 380-381
Author(s):  
R.C. Dickenson ◽  
K.R. Lawless
Keyword(s):  
Standard Sample ◽  
Surface Region ◽  
Specimen Preparation ◽  
Thick Sheet ◽  
Drill Bit ◽  
Sample Holder ◽  
Metal Interface ◽  
Cross Sectional ◽  
Near Surface ◽  
Cold Worked

In thermal oxidation studies, the structure of the oxide-metal interface and the near-surface region is of great importance. A technique has been developed for constructing cross-sectional samples of oxidized aluminum alloys, which reveal these regions. The specimen preparation procedure is as follows: An ultra-sonic drill is used to cut a 3mm diameter disc from a 1.0mm thick sheet of the material. The disc is mounted on a brass block with low-melting wax, and a 1.0mm hole is drilled in the disc using a #60 drill bit. The drill is positioned so that the edge of the hole is tangent to the center of the disc (Fig. 1) . The disc is removed from the mount and cleaned with acetone to remove any traces of wax. To remove the cold-worked layer from the surface of the hole, the disc is placed in a standard sample holder for a Tenupol electropolisher so that the hole is in the center of the area to be polished.

The Effects of Ion Implantation on the Surface Features of Inconel 600

1985 ◽  
Vol 43 ◽  
pp. 288-289
Author(s):  
John D. Rubio
Keyword(s):  
Grain Boundary ◽  
Ion Implantation ◽  
Nuclear Power ◽  
Power Plants ◽  
Surface Region ◽  
Selective Dissolution ◽  
Boundary Region ◽  
Near Surface ◽  
Inconel 600 ◽  
Steam Generator Tubing

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.

Microstructural changes of Aluminum Nitride after laser irradiation and electroless copper deposition

1994 ◽  
Vol 52 ◽  
pp. 636-637
Author(s):  
S. Cao ◽  
A. J. Pedraza ◽  
L. F. Allard
Keyword(s):  
Aluminum Nitride ◽  
Laser Irradiation ◽  
Electroless Deposition ◽  
Thermal Evaporation ◽  
Surface Region ◽  
Near Surface ◽  
Laser Patterning ◽  
Electroless Copper ◽  
Excimer Laser Irradiation ◽  
Laser Effect

Excimer-laser irradiation strongly modifies the near-surface region of aluminum nitride (AIN) substrates. The surface acquires a distinctive metallic appearance and the electrical resistivity of the near-surface region drastically decreases after laser irradiation. These results indicate that Al forms at the surface as a result of the decomposition of the Al (which has been confirmed by XPS). A computer model that incorporates two opposing phenomena, decomposition of the AIN that leaves a metallic Al film on the surface, and thermal evaporation of the Al, demonstrated that saturation of film thickness and, hence, of electrical resistance is reached when the rate of Al evaporation equals the rate of AIN decomposition. In an electroless copper bath, Cu is only deposited in laser-irradiated areas. This laser effect has been designated laser activation for electroless deposition. Laser activation eliminates the need of seeding for nucleating the initial layer of electroless Cu. Thus, AIN metallization can be achieved by laser patterning followed by electroless deposition.

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