Effects of Halogen-Containing Gas Plasma and Rapid Thermal Anneal Treatment on the Reactive Ion Etched Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
Kwang-Ho Kwon ◽  
Bo-Woo Kim ◽  
Hyung-Ho Park ◽  
Jin-Yeong Kang ◽  
Gun-Yung Yeom
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Electrical Performance ◽  
Rapid Thermal Anneal ◽  
Silicon Devices ◽  
Plasma Treatments ◽  
Gas Plasma ◽  
Etched Silicon ◽  
Secondary Ion

AbstractThe effects of SF6 and NF3 gas plasma treatments, and succesive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.

Characteristics and Recovery of SI Surfaces Plasma Etching in CHF3 / C2F6

1992 ◽  
Vol 259 ◽  
Author(s):  
H.-H. Park ◽  
K.-H. Kwon ◽  
B.-H. Koak ◽  
S.-M. Lee ◽  
O.-J. Kwon ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
High Vacuum ◽  
Silicon Layer ◽  
Ultra High Vacuum ◽  
Rapid Thermal Anneal ◽  
Condition C ◽  
Secondary Ion

ABSTRACTThe effects of SiO2 reactive ion etching (RIE) in CHF3 / C2F6 on the surface properties of the underlying Si substrate have been studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. The observed two major modifications are (i) a ∼50nm thick silicon layer which contains carbon and fluorine and (ii) 2∼3nm thick residue layer composed entirely of carbon, fluorine, oxygen and hydrogen on the silicon surface. The thermal behaviors of attributed peaks for C 1s, Si 2p, O 1s and F 1s of residue film have been analyzed after in-situ resistive anneal under ultra high vacuum (UHV) condition. C-F1, C-F2 and C-F3 bonds decompose and form C-CFx (x≤3) bonds above 200°C. Above 400°C, C-CFx bonds also decompose to C-C/H bonds. For recovery of the modified silicon surface, reactive ion etched specimens have been exposed to an oxygen plasma. By XPS analysis, the effect of an O2 plasma treatment has been revealed to be completed within 20min. With an O2 plasma pre-treated, a rapid thermal anneal (RTA) treatment as low as 500°2 is found to be effective for removal of impurities in the silicon.

scholarly journals Wear Resistance Improvement of Cemented Tungsten Carbide Deep-Hole Drills after Ion Implantation

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 239
Author(s):  
Dmitrij Morozow ◽  
Marek Barlak ◽  
Zbigniew Werner ◽  
Marcin Pisarek ◽  
Piotr Konarski ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Tungsten Carbide ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Carbon Layer ◽  
Hole Drilling ◽  
Deep Hole ◽  
Tungsten Nitrides ◽  
Lubrication Effect ◽  
Secondary Ion

The paper is dedicated to the lifetime prolongation of the tools designed for deep-hole drilling. Among available methods, an ion implantation process was used to improve the durability of tungsten carbide (WC)-Co guide pads. Nitrogen fluencies of 3 × 1017 cm−2, 4 × 1017 cm−2 and 5 × 1017 cm−2 were applied, and scanning electron microscope (SEM) observations, energy dispersive spectroscopy (EDS) analyses, X-ray photoelectron spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) measurements were performed for both nonimplanted and implanted tools. The durability tests of nonimplanted and the modified tools were performed in industrial conditions. The durability of implanted guide pads was above 2.5 times more than nonimplanted ones in the best case, presumably due to the presence of a carbon-rich layer and extremely hard tungsten nitrides. The achieved effect may be attributed to the dissociation of tungsten carbide phase and to the lubrication effect. The latter was due to the presence of pure carbon layer with a thickness of a few dozen nanometers. Notably, this layer was formed at a temperature of 200 °C, much smaller than in previously reported research, which makes the findings even more valuable from economic and environmental perspectives.

Interaction of Bovine Serum Albumin and Lysozyme with Stainless Steel Studied by Time-of-Flight Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy

Langmuir ◽  
2012 ◽  
Vol 28 (47) ◽  
pp. 16306-16317 ◽  
Author(s):  
Yolanda S. Hedberg ◽  
Manuela S. Killian ◽  
Eva Blomberg ◽  
Sannakaisa Virtanen ◽  
Patrik Schmuki ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Stainless Steel ◽  
Bovine Serum Albumin ◽  
Serum Albumin ◽  
Photoelectron Spectroscopy ◽  
Bovine Serum ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
X Ray ◽  
Secondary Ion

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol

2021 ◽  
Vol 314 ◽  
pp. 23-28
Author(s):  
Seungjun Oh ◽  
Sunyoung Lee ◽  
Heehwan Kim ◽  
Donggeon Kwak ◽  
Chulwoo Bae ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Isopropyl Alcohol ◽  
Secondary Ion Mass Spectrometry ◽  
Oxidation Reactions ◽  
X Ray ◽  
Technological Control ◽  
Technological Developments ◽  
Ultra Trace ◽  
Ethylene Tetrafluoroethylene ◽  
Secondary Ion

Technological control over ultra-trace level contaminants is important for semiconductor development. Despite technological developments, defects remain in the single wafer wet cleaning process. In this paper, the source of the contamination is explained via trace analytical methods. Fluorine resin materials of polytetrafluoroethylene (PTFE) and ethylene tetrafluoroethylene (ETFE) are commonly used in semiconductor equipment. Isopropyl alcohol (IPA) oxidation reactions occur at high temperature below the boiling point due to impurities. IPA changed to different alcohol forms from gas chromatography (GCMS) analysis. The oxygen concentration in the X-ray photoelectron spectroscopy (XPS) results increased and formed new bonds in IPA with fluorine resin. These reactions confirmed that cations were a catalyst from the time-of-flight secondary ion mass spectrometry (TOF-SIMS) results. Representative ions were Fe+, K+, and Na+ with different concentrations for each material.

Investigation of the Adhesion of Electroless Copper to Glass Substrates

2008 ◽  
Vol 1113 ◽  
Author(s):  
Xiaoyun Cui ◽  
David A. Hutt ◽  
Paul P. Conway
Keyword(s):  
Photoelectron Spectroscopy ◽  
Immersion Time ◽  
Secondary Ion Mass Spectrometry ◽  
Treatment Time ◽  
Catalyst Layer ◽  
Thin Layers ◽  
Glass Substrates ◽  
Substrate Adhesion ◽  
Electroless Copper ◽  
Secondary Ion

ABSTRACTThis paper reports the effect of a Pd/Sn catalyst treatment process on the adhesion of electroless copper deposited onto a glass substrate. Adhesion of the copper varied with catalyst treatment time: short or extended catalyst immersion times led to lower adhesion. In this work silanisation of the glass surface with (3-aminopropyl)-trimethoxysilane was used to provide a layer of functional molecules to assist the adhesion of the Pd/Sn catalyst. Surface analysis of the catalyzed glass was carried out by X-ray Photoelectron Spectroscopy (XPS) and together with Time-of-Flight Secondary Ion Mass Spectrometry, showed that the Pd/Sn structures changed with increasing immersion time in the catalyst bath. The Pd XPS core level peaks indicated that Pd(0) became more significant in the catalyst layer than Pd(II) with increasing immersion time. Tape peel testing was used to assess the adhesion of the coatings: thin layers adhered well to the glass, but for layers thicker than 160 nm tape tests removed large areas. The failure surfaces of copper layers peeled off the glass were also examined by XPS which indicated that the failure occurred between the copper and catalyst.

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