Characteristics and Recovery of SI Surfaces Plasma Etching in CHF3 / C2F6

1992 ◽  
Vol 259 ◽  
Author(s):  
H.-H. Park ◽  
K.-H. Kwon ◽  
B.-H. Koak ◽  
S.-M. Lee ◽  
O.-J. Kwon ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
High Vacuum ◽  
Silicon Layer ◽  
Ultra High Vacuum ◽  
Rapid Thermal Anneal ◽  
Condition C ◽  
Secondary Ion

ABSTRACTThe effects of SiO2 reactive ion etching (RIE) in CHF3 / C2F6 on the surface properties of the underlying Si substrate have been studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. The observed two major modifications are (i) a ∼50nm thick silicon layer which contains carbon and fluorine and (ii) 2∼3nm thick residue layer composed entirely of carbon, fluorine, oxygen and hydrogen on the silicon surface. The thermal behaviors of attributed peaks for C 1s, Si 2p, O 1s and F 1s of residue film have been analyzed after in-situ resistive anneal under ultra high vacuum (UHV) condition. C-F1, C-F2 and C-F3 bonds decompose and form C-CFx (x≤3) bonds above 200°C. Above 400°C, C-CFx bonds also decompose to C-C/H bonds. For recovery of the modified silicon surface, reactive ion etched specimens have been exposed to an oxygen plasma. By XPS analysis, the effect of an O2 plasma treatment has been revealed to be completed within 20min. With an O2 plasma pre-treated, a rapid thermal anneal (RTA) treatment as low as 500°2 is found to be effective for removal of impurities in the silicon.

Effects of Halogen-Containing Gas Plasma and Rapid Thermal Anneal Treatment on the Reactive Ion Etched Silicon

1993 ◽  
Vol 324 ◽  
Author(s):  
Kwang-Ho Kwon ◽  
Bo-Woo Kim ◽  
Hyung-Ho Park ◽  
Jin-Yeong Kang ◽  
Gun-Yung Yeom
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Electrical Performance ◽  
Rapid Thermal Anneal ◽  
Silicon Devices ◽  
Plasma Treatments ◽  
Gas Plasma ◽  
Etched Silicon ◽  
Secondary Ion

AbstractThe effects of SF6 and NF3 gas plasma treatments, and succesive rapid thermal anneal (RTA) treatment for the recovery of modified silicon surface due to CHF3/C2F6 plasma have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS analyses have revealed that NF3 and SF6 plasma treatments are effective for the removal of residue layer. SIMS results show that penetrated impurities in the contaminated silicon substrate reduce through the additional RTA treatment. The effects of NF3, SF6 plasmas, and additional RTA treatments for the recovery of reactive ion etched silicon surface has been also studied by measuring the electrical performance of the silicon devices.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Electron induced surface reactions of (η5-C5H5)Fe(CO)2Mn(CO)5, a potential heterobimetallic precursor for focused electron beam induced deposition (FEBID)

2018 ◽  
Vol 20 (11) ◽  
pp. 7862-7874 ◽  
Author(s):  
Ilyas Unlu ◽  
Julie A. Spencer ◽  
Kelsea R. Johnson ◽  
Rachel M. Thorman ◽  
Oddur Ingólfsson ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Electron Beam ◽  
Photoelectron Spectroscopy ◽  
Surface Reactions ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray ◽  
Electron Beam Induced Deposition

Electron-induced surface reactions of (η5-C5H5)Fe(CO)2Mn(CO)5were exploredin situunder ultra-high vacuum conditions using X-ray photoelectron spectroscopy and mass spectrometry.

In-Situ Study of the Oxide Mediated Epitaxy of CoSi2 on Si

1999 ◽  
Vol 564 ◽  
Author(s):  
M. W. Kleinschmit ◽  
M. Yeadon ◽  
J. M. Gibson
Keyword(s):  
Silicon Surface ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
High Energy Electron ◽  
In Situ Study ◽  
Intermediate Phases ◽  
Transmission Electron ◽  
Combined Imaging

AbstractOxide Mediated Epitaxy (OME) shows promise as a method to form good quality, thin epitaxial CoSi2 films on most Si surfaces. We have performed an in-situ study of the OME of CoSi2, on the Si (001) surface. Our work was carried out with our specially modified ultra-high vacuum transmission electron microscope (UHV TEM) SHEBA (Surface High Energy Electron Beam Apparatus). With SHEBA we were able to monitor the diffraction pattern and therefore the phase formation throughout the anneal. Our results confirm the suppression of intermediate phases during CoSi2 formation in the OME process. We also see a difference in the as deposited Co film when the oxide coated silicon surface is used rather than a clean substrate. From combined imaging and diffraction studies we will shed some light on the mechanism behind the success of OME.

A novel sample preparation method for ultra-high vacuum (UHV) secondary ion mass spectrometry (SIMS) analysis

2018 ◽  
Vol 33 (9) ◽  
pp. 1559-1563 ◽  
Author(s):  
Wanfeng Zhang ◽  
Xiaoping Xia ◽  
Yanqiang Zhang ◽  
Touping Peng ◽  
Qing Yang
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Earth Science ◽  
High Vacuum ◽  
High Sensitivity ◽  
Science Research ◽  
Ultra High Vacuum ◽  
Wide Range ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Secondary ion mass spectrometry (SIMS) has been applied to analyze a wide range of materials for earth science research due to its high sensitivity, high precision and capacity for in situ micro-analysis.

UHV Preparation and In-Situ Surface Analysis of MNFE/Nife Exchange Structures: Interfacial Impurity Incorporation

1993 ◽  
Vol 313 ◽  
Author(s):  
Susan L. Cohen ◽  
John M. Baker ◽  
Michael A. Russak ◽  
Gerald J. Scilla ◽  
Cherngye Hwang ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Photoelectron Spectroscopy ◽  
Exchange Coupling ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Impurity Incorporation ◽  
X Ray ◽  
Manufacturing Applications ◽  
Analysis System

ABSTRACTMnFe/NiFe exchange structures have been prepared in an ultra-high vacuum sputtering/surface analysis system. Controlled introduction of residual gas impurities such as O2 and H2O at the MnFe/NiFe interface is studied by in-situ x-ray photoelectron spectroscopy (XPS) and the exchange structures are magnetically characterized. Due to the extreme reactivity of the NiFe surface towards O2, the exchange coupling is severely degraded by only small exposures of this molecule to the NiFe surface. In contrast, H2O does not oxidize the NiFe surface and therefore can be tolerated in greater quantities in the sputtering chamber without detrimental loss of exchange. This understanding of the basic surface chemistry of the MnFe and NiFe surfaces can lead to improved sputtering practices in actual manufacturing applications.

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