Observations of Damage and Transport of Hydrogen in Ion Bombarded Polycrystalline Silicon

1984 ◽  
Vol 33 ◽  
Author(s):  
D. J. Sharp ◽  
J. K. G. Panitz ◽  
C. H. Seager
Keyword(s):  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Columnar Structure ◽  
Hydrogen Transport ◽  
Transport Mechanisms ◽  
Sheet Resistivity ◽  
Near Surface ◽  
Resistivity Measurements ◽  
Transmission Electron ◽  
Defect Passivation

ABSTRACTA combination of chemical etching and sheet resistivity measurements showed that intense (1.4 mA/cm2 ) low energy (1400 eV) ion beam hydrogenation of polycrystalline silicon having a columnar structure can produce electrical defect passivation to depths in the order of 100 μm. Transmission electron micrographs disclose surface and near-surface features resulting from the ion beam bombardment which suggest that one of the hydrogen transport mechanisms may be defect induced.

Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

1994 ◽  
Vol 339 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Beam Irradiation ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
Amorphous Surface ◽  
Amorphous Sic

ABSTRACTThe evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

scholarly journals Microstructure Evolution in ZrCx with Different Stoichiometries Irradiated by Four MeV Au Ions

Materials ◽  
2019 ◽  
Vol 12 (22) ◽  
pp. 3768
Author(s):  
Boxin Wei ◽  
Dong Wang ◽  
Yujin Wang ◽  
Haibin Zhang
Keyword(s):  
Radiation Damage ◽  
Microstructure Evolution ◽  
Vacancy Concentration ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Dislocation Loops ◽  
Black Dot ◽  
X Ray Diffraction ◽  
Near Surface ◽  
Transmission Electron

ZrCx ceramics with different stoichiometries were irradiated under a four MeV Au ion beam in doses of 2 × 1016 ions/cm2 at room temperature, corresponding to ~130 dpa. Grazing incidence, X-ray diffraction and transmission electron microscopy were performed to study the radiation damage and microstructure evolution in ZrCx ceramics. With the decrease in C/Zr ratio, the expansion of ZrCx lattice became smaller after irradiation. Some long dislocation lines formed at the near-surface, while, in the area with the greatest damage (depth of ~400 nm), large amounts of dislocation loops formed in ZrC, ZrC0.9 and ZrC0.8. With the increase in carbon vacancy concentration, the size of the dislocation loops gradually decreased. Few dislocation loops were found in ZrC0.7 after irradiation, and only black-dot defects were found in the area with the greatest damage. For the non-stoichiometric ZrCx, with the increase of the intrinsic vacancies, the number of C interstitials caused by irradiation decreased, and the recombination barrier of C Frenkel pairs reduced. The above factors will reduce the total number of C interstitials after cascade cooling, suppressing the formation and growth of dislocation loops, which is significant for the enhancement of the tolerance of radiation damage.

Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon

1990 ◽  
Vol 182 ◽  
Author(s):  
J. R. Phillips ◽  
P. Revesz ◽  
J. O. Olowolafe ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Sheet Resistivity ◽  
X Ray ◽  
Resistivity Measurements ◽  
Silicide Layer ◽  
Thermal Stability Of ◽  
Scanning Electron

AbstractThe thermal stability of Co silicide on single crystal and polycrystalline Si has been investigated. Co films were evaporated onto (100) Si and undoped polycrystalline Si and annealed in vacuum. Resulting silicide films were examined using Rutherford backscattering spectroscopy, scanning electron microscopy, electron—induced x—ray spectroscopy, and sheet resistivity measurements. We find that CoSi2 on single crystal (100) Si remains stable through 1000ºC. In contact with undoped polycrystalline Si, intermixing begins at temperatures as low as 650ºC for 30min annealing. The Co silicide and Si layers are intermixed after 750ºC 30min annealing, giving islands of Si surrounded by silicide material, with both components extending from the surface down to the underlying oxide layer. The behavior of CoSi2 contrasts with results reported for TiSi2 which agglomerates on single crystal Si around 900ºC but is stable on polycrystalline silicon as high as 800ºC. Resistivity measurements show that the Co silicide remained interconnected despite massive incursion by Si into the silicide layer.

scholarly journals Effects of the Surface on Displacement Cascades Produced by Heavy-Ion Irradiation of Ni3Al and Cu3Au

1996 ◽  
Vol 439 ◽  
Author(s):  
S. Müller ◽  
M. L. Jenkins ◽  
C. Abromeit ◽  
H. Wollenberger
Keyword(s):  
Ion Irradiation ◽  
Incident Angle ◽  
Ion Beam ◽  
Heavy Ion ◽  
Small Population ◽  
Dislocation Loops ◽  
Near Surface ◽  
Ion Energy ◽  
Heavy Ion Irradiation ◽  
Transmission Electron

AbstractStereo transmission electron microscopy has been used to characterise the distribution in depth of disordered zones and associated dislocation loops in the ordered alloys Ni3Al and Cu3Au after heavy ion irradiation, most extensively for Ni3Al irradiated with 50 keV Ta+ ions at a temperature of 573 K. The Cu3Au specimen was irradiated with 50 keV Ni+ ions at an incident angle of 45° at a temperature of 373 K. In Ni3Al the defect yield, i.e. the probability for a disordered zone to contain a loop was found to be strongly dependent on the depth of the zone in the foil, varying from about 0.7 for near-surface zones to about 0.2 in the bulk. The sizes and shapes of disordered zones were only weakly dependent on depth, except for a small population of zones very near the surface which were strongly elongated parallel to the incident ion beam. In Cu3Au the surface had a smaller but still significant effect on the defect yield. The dependence of the tranverse disordered zone diameter d on ion energy E for Ta+ irradiation of NiA was found to follow a relationship d = k1, E1/α with k, = 2.4 ± 0.4 and α = 3.3 ± 0.4. A similar relationship with the same value of α is valid for a wide variety of incident ion/target combinations found in the literature.

Cross Sectional Transmission Electron Microscopy Study of Obliquely Evaporated Silicon Oxide thin Films

1985 ◽  
Vol 61 ◽  
Author(s):  
A. Barna ◽  
O. Geszti ◽  
L. Gosztola ◽  
E. Seyfried
Keyword(s):  
Cross Sections ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Microscopy Study ◽  
Columnar Structure ◽  
Electron Microscopy Study ◽  
High Rate ◽  
Cross Sectional ◽  
Clear Cut ◽  
Transmission Electron

ABSTRACTThe columnar structure in obliquely evaporated silicon oxide layers was investigated by transmission electron microscope (TEM). For TEM studies of these layers, samples were made by low angle ion-beam thinning of cross-sections, the planes of which were determined by the normal of the film and the direction of evaporation. Increasing the angle of evaporation from 5° to 30° (measured from the plane of the substrate), a change from a well–defined columnar structure to a striated structure was observed, for layers evaporated both under “low-rate” and “high-rate” conditions. There is a clear-cut dependence of the orientation of columns (αc) upon the angle of evaporation (α), however deviating from the “tangent rule” (tanαc=2tanα).

Thermal Stability of CoSi2 on Single Crystal and Polycrystalline Silicon

1990 ◽  
Vol 181 ◽  
Author(s):  
J. R. Phillips ◽  
P. Revesz ◽  
J. O. Olowolafe ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Sheet Resistivity ◽  
X Ray ◽  
Resistivity Measurements ◽  
Silicide Layer ◽  
Thermal Stability Of ◽  
Scanning Electron

ABSTRACTThe thermal stability of Co silicide on single crystal and polycrystalline Si has been investigated. Co films were evaporated onto (100) Si and undoped polycrystalline Si and annealed in vacuum. Resulting silicide films were examined using Rutherford backscattering spectroscopy, scanning electron microscopy, electron-induced x-ray spectroscopy, and sheet resistivity measurements. We find that CoSi2 on single crystal (100) Si remains stable through 1000°C. In contact with undoped polycrystalline Si, intermixing begins at temperatures as low as 650°C for 30min annealing. The Co silicide and Si layers are intermixed after 750°C 30min annealing, giving islands of Si surrounded by silicide material, with both components extending from the surface down to the underlying oxide layer. The behavior of CoSi2 contrasts with results reported for TiSi2 which agglomerates on single crystal Si around 900°C but is stable on polycrystalline silicon as high as 800°C. Resistivity measurements show that the Co silicide remained interconnected despite massive incursion by Si into the silicide layer.

Microstructure and Composition of Surface Layers Formed by Ion Implantation of Nitrogen in High-Purity Aluminum

1988 ◽  
Vol 100 ◽  
Author(s):  
Robert C. Mccune ◽  
W. T. Donlon ◽  
H. K. Plummer ◽  
L. Toth ◽  
F. W. Kunz
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Pure Aluminum ◽  
Surface Region ◽  
Nuclear Reaction Analysis ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
High Purity Aluminum ◽  
Nitrogen Contents

ABSTRACTSurface layers with overall thickness <∼300 nm were produced by ion implantation of N+ or N2+ at energies of 50 or 100 keV in 99.99% pure aluminum. These surfaces were characterized by scanning and transmission electron microscopy, Auger electron spectroscopy, Rutherford backscattering, nuclear reaction analysis and particle-induced X-ray analysis. At doses above 2×1017 N2/cm2 , blistering of the surfaces was observed along with a reduction in the extent of the coulometric dose retained by the material. Oxygen is believed to be introduced into the near-surface region by a process of reaction and ion-beam mixing, as well as possible CO contamination of the beam. A phase, isostructural with AlN, forms semi-coherently with parent aluminum grains, however, some fraction of the metallic aluminum phase remains in the reaction layer, even at overall nitrogen contents which exceed the stoichiometry of AlN.

Electrical and Structural Properties of Cobalt Annealed on Silicon-Germanium Epilayers

1992 ◽  
Vol 281 ◽  
Author(s):  
G. Sarcona ◽  
F. Lin ◽  
M. K. Hatalis ◽  
A. F. Cserhati ◽  
Eva Austin ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Sige Layer ◽  
Dc Magnetron Sputtering ◽  
Sheet Resistivity ◽  
Resistivity Measurements ◽  
Transmission Electron ◽  
Structural And Electrical Properties ◽  
Heterojunction Diodes ◽  
Increasing Temperature ◽  
Anneal Temperature

ABSTRACTThe structural and electrical properties of cobalt annealed on heteroepitaxial, strained-layer silicon-germanium were studied by transmission electron microscopy, four-point-probe and four-terminal resistor resistivity measurements, and junction diodes. The I50nm thick epitaxial p-Si0.87Ge0.13 was grown by UHV-CVD at 590°C. Cobalt was deposited by DC magnetron sputtering. The cobalt was rapid-thermally annealed at various temperatures in forming gas.The cobalt film and the SiGe layer reacted, as illustrated by changes in their film thicknesses, and increased interfacial roughness. The roughness and reacted-film thickness increased with increasing temperature. The sheet resistances of the samples were dependant on the anneal temperature and time. Films formed by annealing at 700°C, 3 min, were 80nm thick, and had 2.8ω/sq sheet resistivity, corresponding to 20μω-cm resistivity. The contact was ohmic, with contact resistivity of l.6×10−4ω-cm2. SiGe/ Si heterojunction diodes contacted by the reacted film, containing Co, Si, and Ge, were compared to diodes contacted by aluminum.

Ion Beam Annealing of Vapor-Deposited Carbon Film

1990 ◽  
Vol 188 ◽  
Author(s):  
Kazuo Higuchi ◽  
Shoji Noda ◽  
Sumiko Iritani ◽  
Tomoji Ishiguro ◽  
Osami Kamigaito
Keyword(s):  
Critical Temperature ◽  
Ion Implantation ◽  
Adhesion Strength ◽  
Ion Beam ◽  
Carbon Film ◽  
Sheet Resistivity ◽  
Graphite Sheet ◽  
Resistivity Measurements ◽  
Deposited Film

ABSTRACTThe effects of ion implantation on microtexture of vapordeposited carbon film were studied by Raman, XRD, TEM and sheet resistivity measurements. Growth of graphitemicrocrystals in the film was found when the film was implanted at the temperature above about 500 K. while graphite-sheet in the as-deposited film was distorted when it was implanted at the temperature below 300 K. The critical temperature for the ion beam annealing was estimated to be about 350 K. Ion implantation also caused the increase of the adhesion strength of the carbon film to a substrate.

The extent of phase transformation in silicon hardness indentations

1992 ◽  
Vol 7 (7) ◽  
pp. 1614-1617 ◽  
Author(s):  
Daniel L. Callahan ◽  
Jonathan C. Morris
Keyword(s):  
Phase Transformation ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Adjacent Region ◽  
Near Surface ◽  
Transformation Zone ◽  
Transmission Electron ◽  
Low Load ◽  
Surface Transformation ◽  
Pressure Phase

The extent of phase transformation occurring in silicon during room-temperature indentation experiments has been examined by transmission electron microscopy of low-load microindents. The results show that the entire hardness impression arises from structural transformation and extrusion of a ductile high pressure phase. In particular, there is no dislocation activity or other mechanism of plastic deformation operating outside the clearly demarcated transformation zone. The observable impression consists of an amorphous transformation zone with an adjacent region of plastically extruded material and a layer of polycrystalline silicon at the near-surface transformation interface.

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