High Performance Polymer Thin Film Transistors Array Printed on a Flexible Polycarbonate Substrate

2002 ◽  
Vol 736 ◽  
Author(s):  
Sung Kyu Park ◽  
Jeong In Han ◽  
Dae Gyu Moon ◽  
Won Keun Kim ◽  
Yong Hoon Kim
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Mobility ◽  
Semiconductor Interface ◽  
Contact Printing ◽  
Saturation Field ◽  
Polycarbonate Substrate

ABSTRACTHigh performance poly (3-hexylthiophene) (P3HT) thin film transistors (TFTs) array was fabricated on a polycarbonate substrate by micro-contact printing method. A thin polyimide layer (40 nm) was applied before silicon oxide deposition to improve the electrical properties of the TFT device. Also, the effects of O2 plasma treatment on the field effect mobility and output current behaviors of the devices were investigated. By plasma treatment, the surface roughness of gate dielectric was improved which accounts for the increased field effect mobility and the hole Schottky barrier height in electrode/semiconductor interface was lowered resulting in large drain current in the device. Based on the experiments, we fabricated P3HT TFTs array with 0.025 cm2/V·s in saturation field effect mobility and on/off current ratio of 103 ∼ 104 on a polycarbonate substrate.

Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

2003 ◽  
Vol 769 ◽  
Author(s):  
Lihong Teng ◽  
Wayne A. Anderson
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Silicon Films ◽  
Subthreshold Swing ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Saturation Field ◽  
Plastic Substrates

AbstractThe properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3.9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0.73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.

Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

1994 ◽  
Vol 336 ◽  
Author(s):  
Y. Chida ◽  
M. Kondo ◽  
G. Ganguly ◽  
A. Matsuda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
High Mobility ◽  
High Electron ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

scholarly journals Influence of Plasma Treatment to the Performance of Amorphous IGZO based Flexible Thin Film Transistors

2017 ◽  
Author(s):  
Long-long Chen ◽  
Xiang Sun ◽  
Ji-feng Shi ◽  
Xi-feng Li ◽  
Xing-wei Ding ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Treatment Time ◽  
Gate Insulator ◽  
Field Effect Mobility ◽  
Flexible Displays ◽  
Plasma Species

Thin film transistors (TFTs) using In-Ga-Zn Oxide (IGZO) as active layer and the gate insulator was treated with NH3 plasma and N2O plasma, respectively, which is fabricated on flexible PI substrate in this work. The performance of IGZO TFTs with different plasma species and treatment time are investigated and compared. The experiment results show that the plasma species and treatment time play an important role in the threshold voltage, field-effect mobility, Ion/Ioff ratio, sub-threshold swing (SS) and bias stress stability of the devices. The TFT with a 10 seconds NH3 plasma treatment shows the best performance; specifically, threshold voltage of 0.34 V, field-effect mobility of 15.97 cm2/Vs, Ion/Ioff ratio of 6.33×107, and sub-threshold swing of 0.36 V/dec. The proposed flexible IGZO-TFTs in this paper can be used as driving devices in the next-generation flexible displays.

scholarly journals Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

Electronics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 955 ◽  
Author(s):  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Jin-Hyuk Bae ◽  
In-Man Kang ◽  
Kwangeun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Structural Characteristics ◽  
Sol Gel ◽  
Critical Role ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Current Ratio

The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively.

High-Performance Submicrometer ZnON Thin-Film Transistors With Record Field-Effect Mobility

2016 ◽  
Vol 37 (3) ◽  
pp. 303-305 ◽  
Author(s):  
Chin-I Kuan ◽  
Horng-Chih Lin ◽  
Pei-Wen Li ◽  
Tiao-Yuan Huang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Mobility

scholarly journals The Role of Dual-Stacked Oxide Semiconductor in High Performance Thin Film Transistors

2020 ◽  
Author(s):  
Youn Sang Kim ◽  
Changik Im ◽  
Nam-Kwang Cho ◽  
Jintaek Park ◽  
Eun Goo Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Band Offset ◽  
Indium Gallium Zinc Oxide ◽  
Field Effect Mobility ◽  
Display Resolution

Abstract Oxide thin film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, Oxide semiconductors (OSs) have been developed as active layers of TFTs and, among them, Indium-Gallium-Zinc-Oxide (IGZO) is actively used in the OLED display field. However, IGZO TFTs are limited by low field-effect mobility, which critically affects display resolution and power consumption, despite superior off-state properties. Herein, we prevailed new working mechanisms in dual-stacked OS and, based on this, developed dual-stacked OS-based TFT with high field-effect mobility (~80 cm2/V·s), ideal threshold voltage near 0 V, high on-off current ratio (>109), and good stability at bias stress. In dual-stacked OS, induced areas are formed at interface by band-offset: band-offset-induced area (BOIA) and BOIA-induced area (BIA). They connect gate-bias-induced area (GBIA) and electrode-bias-induced area (EBIA), resulting in high current flow. Such mechanism will provide new design rules for high performance OS-based TFTs.

Stability of Organic Thin Film Transistors

2004 ◽  
Vol 814 ◽  
Author(s):  
Jeong In Han ◽  
Yong Hoon Kim ◽  
Sung Kyu Park ◽  
Dae Gyu Moon ◽  
Won Keun Kim
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Passivation Layer ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Saturation Field ◽  
The Stability

AbstractThe stability of organic thin film transistors (OTFTs) has become one of the most vital issues in this area of research. In this report, we investigated the stability of rubber stamp printed OTFTs. The electrical properties such as saturation field effect mobility, threshold voltage and on/off current ratio change significantly in ambient air condition. In order to analyze the degradation of the device, transistors were measured in vacuum, dry N2 and air environment as a function of time. In vacuum and dry N2 atmosphere, saturation field effect mobility and threshold voltage variations are relatively small compared to those measured in ambient condition.To realize an air stable device, we applied a passivation layer which protects the device from oxygen or water molecules which is believed to be the source of the degradation. With the passivation layer, the threshold voltage shift was reduced suggesting that a proper passivation layer is a prerequisite in organic-based electronics.

High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility

2021 ◽  
pp. 2000896
Author(s):  
Mohammad Masum Billah ◽  
Abu Bakar Siddik ◽  
Jung Bae Kim ◽  
Dong Kil Yim ◽  
Soo Young Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Field ◽  
High Performance ◽  
Field Effect Mobility ◽  
Dual Channel ◽  
Semiconductor Thin Film

High Performance of Y-doped Sn-Zn-O Films Fabricated by Solution-process for Amorphous Thin Film Transistors

2014 ◽  
Vol 1630 ◽  
Author(s):  
Yunxuan Yu ◽  
Xian Gong ◽  
Dong Liu ◽  
Yan Wang ◽  
Jinfeng Kang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Sol Gel ◽  
Solution Process ◽  
Field Effect Mobility ◽  
Amorphous Thin Film ◽  
Sol Gel Process ◽  
Active Channel

ABSTRACTThe effect of Y dopant incorporated into ZTO with different Y ratios in Y-ZTO system on the performances of ZTO-based TFTs is investigated by using sol-gel process. The proper Y doped ZTO present both high film crystallization temperature and superior electrical properties as an active channel layer of TFTs. The fabricated YZTO-based TFTs with 11% Y show the excellent devices performance such as the channel field effect mobility of 1.756 cm2/Vs, SS of 2.13 V/dec, threshold voltage of 0.8V and on/off ratio of 3.12×106.

Sign in / Sign up

Export Citation Format

Share Document