The Stability of TiH2 Used as Diffusion Barrier on SiO2 Substrates

1994 ◽  
Vol 337 ◽  
Author(s):  
Shyam P. Murarka ◽  
Sen-Hou Ko ◽  
Pei-Jun Ding ◽  
William A. Lanford
Keyword(s):  
Thin Film ◽  
Electrical Resistivity ◽  
Nuclear Reaction ◽  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Water Concentration ◽  
X Ray Diffraction ◽  
Adhesion Promoter ◽  
X Ray ◽  
The Stability

ABSTRACTTiH2 has been considered as a diffusion barrier and adhesion promoter between oxide and Cu. This phase is formed by reaction of Ti with hydrogen during rapid thermal annealings. In this investigation the stability of TiH2 on PECVD and thermal oxides has been studied during Ar anneal at 400 and 500°C. X-ray diffraction, sheet resistance measurements, RBS, and nuclear reaction technique to profile hydrogen have been used in this study. The results indicate that the stability of TiH2 is dependent on the nature of the oxide, for example, the water concentration and the density of the oxide and on the temperature of the anneal. These results will be discussed in view of the applicability of TiH2 which has a low thin film electrical resistivity of about 100 μΩ-cm.

TiNi/GaAs Thin Film Structures for Gate Metallizations

2000 ◽  
Vol 648 ◽  
Author(s):  
Chichang Zhang ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Sheet Resistance ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Tini

AbstractShape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370oC. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

Effect of a Titanium Interlayer on the Performance of the Titanium Nitride Diffusion Barrier

1999 ◽  
Vol 563 ◽  
Author(s):  
K. Y Lu ◽  
J. S. Chen
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Average Value ◽  
Cu Metallization ◽  
Glancing Angle ◽  
Tin Diffusion Barrier ◽  
Thermal Stability Of

AbstractWe have studied the effect of a Ti interlayer on the behavior of a TiN diffusion barrier for Al and Cu metallizations. Thermal stability of Al/Ti/TiN/<Si> and Al/TiN/<Si> samples annealed at 400–600°C for 30 min was investigated using Auger electron spectroscopy (AES), glancing angle X-ray diffraction and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization.After annealing at 400°C and 500°C, the AI/TiN/<Si> samples exhibited the same sheet resistance as the as-deposited one, while the sheet resistances of the Al/Ti/TiN/<Si> samples increased upon annealing. After annealing at 600°C, pyramidal pits developed on the surface of the Al/TiN/<Si> sample, but not on the Al/Ti/TiN/<Si> sample. Sheet resistance measurements for the 600°C-annealed Al/TiN/<Si> sample resulted in a more scattered distribution and a higher average value than for the Al/Ti/TiN/<Si> sample. The results clearly indicate that the performance of the TiN barrier layer is significantly improved by including a thin Ti film between the TiN and the Al. The Ti interlayer also improves the TiN barrier performance for the Cu metallization system.

Comparison of temperature driven ordering in bulk foil and thin film of L10ordered FePd

2004 ◽  
Vol 842 ◽  
Author(s):  
Chaisak Issro ◽  
Wolfgang Püschl ◽  
Wolfgang Pfeiler ◽  
Bogdan Sepiol ◽  
Peter F. Rogl ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Resistivity ◽  
Long Range ◽  
Molecular Beam ◽  
Resistivity Measurement ◽  
Range Order ◽  
Electrical Resistivity Measurement ◽  
Long Range Order ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTChanges in the degree of long-range order of 10 μm thick FePd foil are presented and compared with results on 50 nm thick FePd films. The films were produced by dc and rf magnetron co-sputtering on Si as well as by molecular beam epitaxy co-deposition on MgO substrates. Long-range order was studied by electrical resistivity measurement, X-ray diffraction and Möβbauer spectroscopy.

Reactions of Titanium Films with thin Silicon Dioxide, Nitride, and Oxynitride Films During Rapid Thermal Annealing

1992 ◽  
Vol 260 ◽  
Author(s):  
Sen-Hou Ko ◽  
N. M. Devashrajee ◽  
Shyam P. Murarka ◽  
Pei-Jun Ding ◽  
William A. Lanford
Keyword(s):  
Silicon Dioxide ◽  
Nuclear Reaction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Silicon

ABSTRACTThe interactions of Ti with SiO2, Si3N4, and SiOiNy have been studied during rapid thermal annealing at 400 to 900 °C in Ar with 3% H2 ambient. X-ray diffraction, sheet resistance measurements, RBS, nuclear reaction technique to profile hydrogen, and microscopy have been employed in this study. The results of this investigation indicate that Si3N4 and SiOxNy are more stable with Ti than SiO2.

TiB2as a Diffusion Barrier for Cu/ Metallization

1999 ◽  
Vol 563 ◽  
Author(s):  
J. L. Wang ◽  
J. S. Chen
Keyword(s):  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Electrical Characterization ◽  
Sample Surface ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Metallization ◽  
Glancing Angle ◽  
Scanning Electron

AbstractTiB2, films deposited by co-sputtering from a boron and a TiB, target are evaluated as the diffusion barrier for Cu metallization. Material characteristics of the TiB, films and metallurgical interactions of the Cu/TiB2/<Si> system annealed at 400−700°C for 30 min, in a 80%Ar+20%H2 flow, were investigated by glancing angle X-ray diffraction, Auger electron spectroscopy (AES), and scanning electron microscopy (SEM). Sheet resistance was measured for electrical characterization.The composition and resistivity of the sputtered TiB1 films varied with the bias applied on the substrate. To obtain a low film resistivity, a negative bias of 200V was applied during sputtering. The resulting TiB2 film is nanocrystalline with a resistivity of 300 μΩcm. After copper deposition, the Cu/TiB2/<Si> samples have a constant sheet resistance after annealing up to 600°C for 30min. The overall sheet resistance of the sample increases by five orders of magnitude after annealing at 700°C, and scanning electron micrographs reveal that the sample surface is severely deteriorated after annealing at 700°C.

Fabrication of Ta-Al-N Thin Films and its Cu Diffusion on Barrier Properties

2007 ◽  
Vol 26-28 ◽  
pp. 593-596 ◽  
Author(s):  
You Zhen Li ◽  
Ji Cheng Zhou
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Sheet Resistance ◽  
Diffusion Barrier ◽  
Barrier Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
New Generation ◽  
Si Wafer

Ta-Al-N thin films on Si wafer were prepared by RF reactive magnetron sputtering in a N2/Ar ambient. Then the stacked structures of Cu/Ta-Al-N/Si were prepared and annealed at temperatures varied from 400°C to 900°C for 5 minutes in a N2 ambient tube. Four-point probe (FPP) sheet resistance measurement, Atomic force microscope (AFM), Scanning electron microscope(SEM), Alpha-Step IQ Profilers and X-ray Diffraction(XRD) were used to investigate the composition, morphology and the diffusion barrier properties of the thin films. The results show that with the increasing of Al component, the surface of Ta-Al-N thin-films became finer, the sheet resistance became higher, and after annealing at 800°C/300S FA, Cu diffusion through Ta-Al-N barrier didn’t not occurred. Results show that Ta-Al-N thin-films could act as diffusion barrier for new generation integrated circuits due to its excellent high temperature properties.

Fractionation of polymethylene chains: An electron crystallographic investigation

1986 ◽  
Vol 44 ◽  
pp. 794-795
Author(s):  
Douglas L. Dorset
Keyword(s):  
Cross Section ◽  
Binary Systems ◽  
Linear Chain ◽  
Pure Component ◽  
Organic Substrates ◽  
Crystallographic Investigation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Sizes ◽  
The Stability

A variety of linear chain materials exist as polydisperse systems which are difficultly purified. The stability of continuous binary solid solutions assume that the Gibbs free energy of the solution is lower than that of either crystal component, a condition which includes such factors as relative molecular sizes and shapes and perhaps the symmetry of the pure component crystal structures.Although extensive studies of n-alkane miscibility have been carried out via powder X-ray diffraction of bulk samples we have begun to examine binary systems as single crystals, taking advantage of the well-known enhanced scattering cross section of matter for electrons and also the favorable projection of a paraffin crystal structure posited by epitaxial crystallization of such samples on organic substrates such as benzoic acid.

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