Materials Issues in Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-340-3 ◽

1994 ◽

Vol 340 ◽

Author(s):

J.Y. Tsao

Keyword(s):

Thin Films ◽

State Physics ◽

Crystal Growth ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Solid State Physics ◽

The Past ◽

Device Structures ◽

Device Applications ◽

Interesting Area

The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics.In addition toits numerous device applications, MBE is also an enormously rich and interesting area ofmaterials science in and of itself. In this paper, we discuss a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, orsurfaces [1].

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Buffer-layer enhanced crystal growth of BaB6 (100) thin films on MgO (100) substrates by laser molecular beam epitaxy

Applied Surface Science ◽

10.1016/j.apsusc.2011.12.083 ◽

2012 ◽

Vol 258 (8) ◽

pp. 4000-4004

Author(s):

Yushi Kato ◽

Ryosuke Yamauchi ◽

Hideki Arai ◽

Geng Tan ◽

Nobuo Tsuchimine ◽

...

Keyword(s):

Thin Films ◽

Crystal Growth ◽

Molecular Beam Epitaxy ◽

Buffer Layer ◽

Molecular Beam ◽

Laser Molecular Beam Epitaxy

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A technique to prepare cross-sectional TEM specimens of semiconducting devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010014508x ◽

1986 ◽

Vol 44 ◽

pp. 742-743

Author(s):

A. K. Rai ◽

P. P. Pronko

Keyword(s):

Thin Films ◽

Surface Region ◽

Sample Surface ◽

Specific Region ◽

Cross Sectional ◽

Thin Sections ◽

The Past ◽

Device Structures ◽

Ion Implanted

Several techniques have been reported in the past to prepare cross(x)-sectional TEM specimen. These methods are applicable when the sample surface is uniform. Examples of samples having uniform surfaces are ion implanted samples, thin films deposited on substrates and epilayers grown on substrates. Once device structures are fabricated on the surfaces of appropriate materials these surfaces will no longer remain uniform. For samples with uniform surfaces it does not matter which part of the surface region remains in the thin sections of the x-sectional TEM specimen since it is similar everywhere. However, in order to study a specific region of a device employing x-sectional TEM, one has to make sure that the desired region is thinned. In the present work a simple way to obtain thin sections of desired device region is described.

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