Rapid Thermal Oxidation for Passivation of Porous Silicon

1994 ◽  
Vol 342 ◽  
Author(s):  
I. BÁrsony ◽  
J.G.E. Klappe ◽  
É. Vázsonyi ◽  
T. Lohner ◽  
M. Fried
Keyword(s):  
Porous Silicon ◽  
Mechanical Stability ◽  
Porous Substrate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Tetragonal Lattice ◽  
Optical Heating ◽  
Vertical Inhomogeneity ◽  
Highly Porous

ABSTRACTChemical and mechanical stability of porous silicon layers (PSL) is the prerequisite of any active (luminescent) or passive (e.g. porous substrate) integrated applications. In this work X-ray diffraction (XRD) was used to analyze quantitatively the strain distribution obtained in different morphology PSL that were prepared on (100) p and p+Si substrates. Tetragonal lattice constant distortion can be as high as 1.4% in highly porous “as-prepared” samples. Incoherent optical heating RTO is governed by the absorption in the oxidized specimen. PSL show vertical inhomogeneity according to interpretation of spectroscopic ellipsometry (SE) data. Oxygen incorporation during RTO is controlled by specific surface (in p+ proportional, in p inversely proportional with porosity), while the developing compressive stress depends on pore size, and decreases with porosity in both morphologies.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

X-ray diffraction studies of porous silicon

1996 ◽  
Vol 276 (1-2) ◽  
pp. 1-6 ◽  
Author(s):  
Daniel Bellet ◽  
Gérard Dolino
Keyword(s):  
Porous Silicon ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Structural Studies of Zno Nanostructures on Porous Silicon: Effect of Post-Annealing Temperature

2018 ◽  
Vol 7 (3.11) ◽  
pp. 48
Author(s):  
Kevin Alvin Eswar ◽  
Mohd Husairi Fadzillah Suhaimi ◽  
Muliyadi Guliling ◽  
Zuraida Khusaimi ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Annealing Temperature ◽  
Electrochemical Etching ◽  
Texture Coefficient ◽  
Zno Nanostructures ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Post Annealing Temperature

ZnO Nanostructures have been successfully deposited on of Porous silicon (PSi) via wet colloid chemical approach. PSi was prepared by electrochemical etching method. ZnO/PSi thin films were annealed in different temperature in the range of 300 °C to 700 °C. Surface morphology studies were conducted using field emission scanning microscopy (FESEM). Flower-like structures of ZnO were clearly seen at annealing temperature of 500 °C. The X-ray diffraction spectra (XRD) have been used to investigate the structural properties. There are three dominant peaks referred to plane (100), (002) and (101) indicates that ZnO has a polycrystalline hexagonal wurtzite structures. Plane (002) shows the highest intensities at annealing temperature of 500 °C. Based on plane (002) analysis, the sizes were in range of 30.78 nm to 55.18. In addition, it was found that the texture coefficient of plane (002) is stable compared to plane (100) and (101). 

scholarly journals Compressibility Studies of Zirconium Based Metal-Organic Frameworks

2014 ◽  
Vol 70 (a1) ◽  
pp. C157-C157
Author(s):  
Claire Hobday ◽  
Stephen Moggach ◽  
Carole Morrison ◽  
Tina Duren ◽  
Ross Forgan
Keyword(s):  
High Pressure ◽  
Mechanical Stability ◽  
Metal Organic Frameworks ◽  
External Pressure ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Crystallography ◽  
Pressure Medium ◽  
Metal Organic ◽  
University Of Oslo

Metal-organic frameworks (MOFs) are a well-studied class of porous materials with the potential to be used in many applications such as gas storage and catalysis.[1] UiO-67 (UiO = University of Oslo), a MOF built from zirconium oxide units connected with 4,4-biphenyldicarboxylate (BDC) linkers, forms a face centred cubic structure. Zirconium has a high affinity towards oxygen ligands making these bridges very strong, resulting in UiO-based MOFs having high chemical and thermal stability compared to other MOF structures. Moreover, UiO-67 has become popular in engineering studies due to its high mechanical stability.[2] Using high pressure x-ray crystallography we can exert MOFs to GPa pressures, experimentally exploring the mechanical stability of MOFs to external pressure. By immersing the crystal in a hydrostatic medium, pressure is applied evenly to the crystal. On surrounding a porous MOF with a hydrostatic medium composed of small molecules (e.g. methanol), the medium can penetrate the MOF, resulting in medium-dependant compression. On compressing MOF-5 (Zn4O(BDC)3) using diethylformamide as a penetrating medium, the framework was shown to have an increased resistance to compression, becoming amorphous several orders of magnitude higher in pressure than observed on grinding the sample.[3] Here we present a high-pressure x-ray diffraction study on the UiO-based MOF UiO-67, and several new synthesised derivatives built from same metal node but with altered organic linkers, allowing us to study in a systematic way, the mechanical stability of the MOF, and its pressure dependence on both the linker, and pressure medium.

Gold nanoclusters reductively deposited on porous silicon: morphology and electronic structures

1998 ◽  
Vol 76 (11) ◽  
pp. 1707-1716 ◽  
Author(s):  
I Coulthard ◽  
S Degen ◽  
Y -J Zhu ◽  
T K Sham
Keyword(s):  
Gold Nanoparticles ◽  
Porous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gold Nanoclusters ◽  
Gold Complex ◽  
X Ray Diffraction ◽  
Complex Ions ◽  
X Ray ◽  
Preparation Conditions ◽  
P Type

Utilizing porous silicon as a reducing agent and a substrate, gold complex ions [AuCl4]- were reduced from aqueous solution to produce nanoparticles of gold upon the surface of porous silicon. Scanning electron microscopy (SEM) was utilized to study the morphology of the porous silicon layers and the deposits of gold nanoparticles. It is found that preparation conditions have a profound effect on the morphology of the deposits, especially on porous silicon prepared from a p-type wafer. The gold nanoparticles, varying from micrometric aggregates of clusters of the order of 10 nm, to a distribution of nearly spherical clusters of the order of 10 nm, to strings of ~10 nm were observed and compared to bulk gold metal using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and X-ray absorption spectroscopy (XAS). These techniques confirm and complement the SEM findings. The potential for this reductive deposition technique is noted.Key words: gold nanostructures, reductive deposition, porous silicon, morphology, X-ray spectroscopy.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Contribution of the hybrid component to the structure and properties of ceramics based on metastable phases Al2O3

2021 ◽  
pp. 127-136
Author(s):  
A. V. Maletsky ◽  
T. E. Konstantinova ◽  
D. R. Belichko ◽  
G. K. Volkova ◽  
V. V. Burkhovetsky
Keyword(s):  
Mechanical Properties ◽  
Yttrium Aluminum Garnet ◽  
Metastable Phase ◽  
Physical And Mechanical Properties ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
Mutual Inhibition ◽  
X Ray ◽  
Tetragonal Lattice ◽  
Yttrium Aluminum

The paper presents results of the study of the effect of doping with yttrium oxide on ceramics of the composition (γ + θ) Al2O3 + nY2O3 (n = 0, 1, 2, 3 wt%), sintered at 1550°C for 2 h, from powders of the specified composition annealed at temperatures of 500 , 800, 1000°С. X-ray diffraction analysis established the formation in ceramics of yttrium aluminum garnet Y3Al5O12 (YAG) and a metastable phase of the same composition with a tetragonal lattice type in powders at temperatures above 1200°C. The effect of YAG on the physical and mechanical properties was established: high properties were demonstrated by ceramics of the composition α-Al2O3 + 2wt% Y2O3, obtained from a powder annealed at 1000°C. In addition, high physical and mechanical properties were observed in ceramics of the composition α-Al2O3 + 0wt% Y2O3, obtained from a powder annealed at 800°C. The effect of the so-called “mutual protection against crystallization” was discovered, which consists in the mutual inhibition of crystallization processes in powders of the Al2O3 – Y2O3 system.

Synthesis of Nanoporous Material from Lignin via Carbonization Assisted Acid Activation

2020 ◽  
Vol 990 ◽  
pp. 149-154
Author(s):  
Nutchaporn Ngamthanacom ◽  
Napat Kaewtrakulchai ◽  
Weerawut Chaiwat ◽  
Laemthong Chuenchom ◽  
Masayoshi Fuji ◽  
...  
Keyword(s):  
Pulp Mill ◽  
Total Pore Volume ◽  
Nanoporous Carbon ◽  
Carbonization Temperature ◽  
Acid Activation ◽  
High Porosity ◽  
Process Variables ◽  
X Ray Diffraction ◽  
X Ray ◽  
Highly Porous

Waste lignin (WL) from the pulp mill and paper was studied for its potential application to prepare the nanoporous carbon with high porosity via carbonization assisted acid activation. The effect of acid activation such as HNO3, HCl, H2SO4, and H3PO4 on lignin transformation to nanoporous carbon investigated. The physicochemical properties of nanoporous carbon were comprehensively characterized through N2 sorption, Scanning electron microscope (SEM), X-ray diffraction (XRD), and Fourier transform infrared (FTIR), respectively. N2 sorption revealed that the condition using 5% vol of phosphoric acid activation at carbonization temperature of 700°C for 2 h exhibited the highly porous structure of carbon nanoparticles with a total pore volume of 0.035 cm3/g. With the properly selecting process variables of waste lignin development could be producing high porosity nanoporous carbon.

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Dovidenko ◽  
S. Oktyabrsky ◽  
J. Narayan ◽  
M. Razeghi
Keyword(s):  
Epitaxial Growth ◽  
Substrate Surface ◽  
Wide Band ◽  
X Ray Diffraction ◽  
Wide Band Gap ◽  
High Quality ◽  
Microstructural Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

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