Characterization of Si Implantation and Annealing of InP by Raman Spectroscopy

1994 ◽  
Vol 354 ◽  
Author(s):  
L. Artus ◽  
R. Cusco ◽  
J.M. Martin ◽  
G. Gonzalez-Diaz
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Second Order ◽  
Good Recovery ◽  
Scattering Measurements ◽  
Lattice Damage

AbstractRaman scattering was used to assess the lattice damage caused by Si+ implantation in InP, as well as the lattice recovery achieved after rapid thermal annealing (RTA). Semi-insulating InP was implanted with Si+ with doses in the range of 1012 to 5xl014cm”2. Raman scattering measurements show a progressive intensity reduction of the characteristic first- and second-order InP Raman peaks and an enhancement of the disorder activated modes with increasing dose. The onset of amorphization was found to be at about 1014 cm”2. RTA of the implanted samples at 875 °C for 10s results in a very good recovery of the InP lattice even for the highest dose, as confirmed by Raman scattering measurements.

Critical Review of Raman Spectroscopy as a Diagnostic Tool for Semiconductor Microcrystals

1989 ◽  
Vol 164 ◽  
Author(s):  
P.M Fauchet ◽  
I.H. Campbell
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Raman Scattering ◽  
Diagnostic Tool ◽  
Critical Review ◽  
Size Dependence ◽  
Second Order ◽  
First Order ◽  
Surface Vibrations

AbstractRaman scattering is becoming a widely used tool for the characterization of semiconductor microcrystals due to its sensitivity to crystal sizes below a few hundred angstroms. Through detailed analysis of the first order Raman spectrum it is possible to determine the size and shape of microcrystalline grains. First order spectra must be examined with care however, since they are sensitive to other factors including: stress/strain, surface vibrations, mixed amorphous/microcrystalline phases and intragrain defects. Second order Raman spectra are more sensitive to microcrystalline effects than first order spectra. They offer the potential to measure crystal sizes greater than a few hundred angstroms but much work remains to be done to quantify the size dependence of the second order spectra.

Characterization of Ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing

1999 ◽  
Vol 144-145 ◽  
pp. 697-701 ◽  
Author(s):  
W.K Choi ◽  
S Kanakaraju ◽  
Z.X Shen ◽  
W.S Li
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ge Nanocrystals

Characterization of the TiW‐GaAs interface after rapid thermal annealing

1989 ◽  
Vol 66 (10) ◽  
pp. 4775-4779 ◽  
Author(s):  
M. de Potter ◽  
W. De Raedt ◽  
M. Van Hove ◽  
G. Zou ◽  
H. Bender ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing

Micro-Raman characterization of Ge diffusion and Si stress change in thin epitaxial Si1−xGex layers on Si(100) after rapid thermal annealing

2012 ◽  
Vol 27 (9) ◽  
pp. 1314-1323 ◽  
Author(s):  
Chun-Wei Chang ◽  
Min-Hao Hong ◽  
Wei-Fan Lee ◽  
Kuan-Ching Lee ◽  
Li-De Tseng ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Stress Change ◽  
Image Position ◽  
Raman Characterization

Abstract

scholarly journals Non-contact monitoring of Ge and B diffusion in B-doped epitaxial Si1-xGex bi-layers on silicon substrates during rapid thermal annealing by multiwavelength Raman spectroscopy

AIP Advances ◽  
2012 ◽  
Vol 2 (3) ◽  
pp. 032150 ◽  
Author(s):  
Min-Hao Hong ◽  
Chun-Wei Chang ◽  
Dung-Ching Perng ◽  
Kuan-Ching Lee ◽  
Shiu-Ko Jang Jian ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Substrates

scholarly journals Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3928 ◽  
Author(s):  
Kashif Shahzad ◽  
Kunpeng Jia ◽  
Chao Zhao ◽  
Dahai Wang ◽  
Muhammad Usman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Reaction ◽  
Ion Irradiation ◽  
Metal Deposition ◽  
Pristine Graphene ◽  
Bombardment Energy ◽  
Induced Defects

The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N2), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 1014 ions/cm2. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.

Raman Scattering Study of Mixing of GaAs/AlAs Superlattices by Ion Implantation and Rapid Thermal Annealing

1986 ◽  
Vol 69 ◽  
Author(s):  
D. Kirillov ◽  
P. Ho ◽  
G. A. Davis
Keyword(s):  
Ion Implantation ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Damaged Material ◽  
Different Types ◽  
Scattering Study

AbstractRaman scattering was applied to study mixing of GaAs/AlAs superlattices. Different implantation ions and doses were used. The evolution from partially amorphous to completely amorphous and from partially mixed to completely mixed structures was observed. Rapid thermal annealing caused recrystallization of the damaged material. Different types of structures were obtained, depending on the implantation doses and species of ions. Completely mixed crystalline alloys could be obtained only for high implantation doses.

Sign in / Sign up

Export Citation Format

Share Document