Critical Review of Raman Spectroscopy as a Diagnostic Tool for Semiconductor Microcrystals

1989 ◽  
Vol 164 ◽  
Author(s):  
P.M Fauchet ◽  
I.H. Campbell
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Raman Scattering ◽  
Diagnostic Tool ◽  
Critical Review ◽  
Size Dependence ◽  
Second Order ◽  
First Order ◽  
Surface Vibrations

AbstractRaman scattering is becoming a widely used tool for the characterization of semiconductor microcrystals due to its sensitivity to crystal sizes below a few hundred angstroms. Through detailed analysis of the first order Raman spectrum it is possible to determine the size and shape of microcrystalline grains. First order spectra must be examined with care however, since they are sensitive to other factors including: stress/strain, surface vibrations, mixed amorphous/microcrystalline phases and intragrain defects. Second order Raman spectra are more sensitive to microcrystalline effects than first order spectra. They offer the potential to measure crystal sizes greater than a few hundred angstroms but much work remains to be done to quantify the size dependence of the second order spectra.

Raman Spectroscopy of Ion-Implanted Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
David D. Tuschel ◽  
James P. Lavine
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Second Order ◽  
Order Mode ◽  
Optical Mode ◽  
Phonon Modes ◽  
Incident Laser ◽  
First Order ◽  
Boron Implantation ◽  
Scattering Strength

AbstractRaman spectroscopy is used to characterize silicon implanted with boron at a dose of 1014/cm2 or less and thermally annealed. The Raman scattering strengths and band shapes of the first-order optical mode at 520 cm-1 and of the second-order phonon modes are investigated to determine which modes are sensitive to the boron implant. The asimplanted samples show diminishing Raman scattering strength as the boron dose increases when the incident laser beam is 60° with respect to the sample normal. Thermal annealing restores some of the Raman scattering strength. Three excitation wavelengths are used and the shortest, 457.9 nm, yields the greatest spectral differences from unimplanted silicon. The backscattering geometry shows a variety of changes in the Raman spectrum upon boron implantation. These involve band shifts of the first-order optical mode, bandwidth variations of the first-order optical mode, and the intensity of the second-order mode at 620 cm-1.

Raman Spectroscopy of Ion-Implanted Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
David D. Tuschel ◽  
James P. Lavine
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Second Order ◽  
Order Mode ◽  
Optical Mode ◽  
Phonon Modes ◽  
Incident Laser ◽  
First Order ◽  
Boron Implantation ◽  
Scattering Strength

AbstractRaman spectroscopy is used to characterize silicon implanted with boron at a dose of 1014/cm2 or less and thermally annealed. The Raman scattering strengths and band shapes of the first-order optical mode at 520 cm-1 and of the second-order phonon modes are investigated to determine which modes are sensitive to the boron implant. The asimplanted samples show diminishing Raman scattering strength as the boron dose increases when the incident laser beam is 60° with respect to the sample normal. Thermal annealing restores some of the Raman scattering strength. Three excitation wavelengths are used and the shortest, 457.9 nm, yields the greatest spectral differences from unimplanted silicon. The backscattering geometry shows a variety of changes in the Raman spectrum upon boron implantation. These involve band shifts of the first-order optical mode, bandwidth variations of the first-order optical mode, and the intensity of the second-order mode at 620 cm-1.

Characterization of diamond films by Raman spectroscopy

1989 ◽  
Vol 4 (2) ◽  
pp. 385-393 ◽  
Author(s):  
Diane S. Knight ◽  
William B. White
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Phonon Mode ◽  
Diamond Films ◽  
Graphitic Carbon ◽  
First Order ◽  
Film Preparation ◽  
Deposited Films ◽  
Hard Substrates

As the technology for diamond film preparation by plasma-assisted CVD and related procedures has advanced, Raman spectroscopy has emerged as one of the principal characterization tools for diamond materials. Cubic diamond has a single Raman-active first order phonon mode at the center of the Brillouin zone. The presence of sharp Raman lines allows cubic diamond to be recognized against a background of graphitic carbon and also to characterize the graphitic carbon. Small shifts in the band wavenumber have been related to the stress state of deposited films. The effect is most noticeable in diamond films deposited on hard substrates such as alumina or carbides. The Raman line width varies with mode of preparation of the diamond and has been related to degree of structural order. The Raman spectrum of hexagonal diamond (lonsdaleite) is distinct from that of the cubic diamond and allows it to be recognized.

Characterization of Si Implantation and Annealing of InP by Raman Spectroscopy

1994 ◽  
Vol 354 ◽  
Author(s):  
L. Artus ◽  
R. Cusco ◽  
J.M. Martin ◽  
G. Gonzalez-Diaz
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Second Order ◽  
Good Recovery ◽  
Scattering Measurements ◽  
Lattice Damage

AbstractRaman scattering was used to assess the lattice damage caused by Si+ implantation in InP, as well as the lattice recovery achieved after rapid thermal annealing (RTA). Semi-insulating InP was implanted with Si+ with doses in the range of 1012 to 5xl014cm”2. Raman scattering measurements show a progressive intensity reduction of the characteristic first- and second-order InP Raman peaks and an enhancement of the disorder activated modes with increasing dose. The onset of amorphization was found to be at about 1014 cm”2. RTA of the implanted samples at 875 °C for 10s results in a very good recovery of the InP lattice even for the highest dose, as confirmed by Raman scattering measurements.

Amphibole and mica 40Ar/39Ar ages from the Kaipokok and Aillik domains, Makkovik Province, Labrador: towards a characterization of back-arc processes in the Paleoproterozoic

2002 ◽  
Vol 39 (5) ◽  
pp. 749-764 ◽  
Author(s):  
Nicholas Culshaw ◽  
Peter Reynolds ◽  
Gavin Sinclair ◽  
Sandra Barr
Keyword(s):  
Thermal Effect ◽  
Shear Zone ◽  
Second Order ◽  
Greenschist Facies ◽  
Metamorphic Rocks ◽  
Arc Magmatism ◽  
First Order ◽  
Back Arc ◽  
Order Pattern

We report amphibole and mica 40Ar/39Ar ages from the Makkovik Province. Amphibole ages from metamorphic rocks decrease towards the interior of the province, indicating a first-order pattern of monotonic cooling with progressive migration of the province into a more distal back-arc location. The amphibole data, in combination with muscovite ages, reveal a second-order pattern consisting of four stages corresponding to changing spatial and temporal configurations of plutonism and deformation. (1) The western Kaipokok domain cooled through muscovite closure by 1810 Ma, long after the cessation of arc magmatism. (2) The Kaipokok Bay shear zone, bounding the Kaipokok and Aillik domains, cooled through amphibole closure during 1805–1780 Ma, synchronous with emplacement of syn-tectonic granitoid plutons. (3) Between 1740 and 1700 Ma, greenschist-facies shearing occurred along the boundary between the Kaipokok domain and Nain Province synchronous with A-type plutonism and localized shearing in the western Kaipokok domain, cooling to muscovite closure temperatures in the Kaipokok Bay shear zone, and A-type plutonism and amphibole closure or resetting in the Aillik domain. (4) In the period 1650–1640 Ma, muscovite ages, an amphibole age from a shear zone, and resetting of plutonic amphibole indicate a thermal effect coinciding in part with Labradorian plutonism in the Aillik domain. Amphibole ages from dioritic sheets in the juvenile Aillik domain suggest emplacement between 1715 and 1685 Ma. Amphibole ages constrain crystallization of small mafic plutons in the Kaipokok domain (reworked Archean foreland) to be no younger than 1670–1660 Ma. These ages are the oldest yet obtained for Labradorian plutonism in the Makkovik Province.

The Second-Order Raman Stokes Stronger Than the First-Order Raman Stokes Due to Inverse Raman Scattering in a Single Mode Tellurite Fiber

2017 ◽  
Vol 53 (4) ◽  
pp. 1-4 ◽  
Author(s):  
Tonglei Cheng ◽  
Xiaojie Xue ◽  
Weiqing Gao ◽  
Takenobu Suzuki ◽  
Yasutake Ohishi
Keyword(s):  
Raman Scattering ◽  
Single Mode ◽  
Second Order ◽  
First Order

Second-order logic, philosophical issues in

2018 ◽  
Author(s):  
Stewart Shapiro
Keyword(s):  
Mathematical Practice ◽  
Expressive Power ◽  
Deductive System ◽  
Second Order ◽  
Order Logic ◽  
Mathematical Structures ◽  
First Order ◽  
Correct Reasoning ◽  
Second Order Logic

Typically, a formal language has variables that range over a collection of objects, or domain of discourse. A language is ‘second-order’ if it has, in addition, variables that range over sets, functions, properties or relations on the domain of discourse. A language is third-order if it has variables ranging over sets of sets, or functions on relations, and so on. A language is higher-order if it is at least second-order. Second-order languages enjoy a greater expressive power than first-order languages. For example, a set S of sentences is said to be categorical if any two models satisfying S are isomorphic, that is, have the same structure. There are second-order, categorical characterizations of important mathematical structures, including the natural numbers, the real numbers and Euclidean space. It is a consequence of the Löwenheim–Skolem theorems that there is no first-order categorical characterization of any infinite structure. There are also a number of central mathematical notions, such as finitude, countability, minimal closure and well-foundedness, which can be characterized with formulas of second-order languages, but cannot be characterized in first-order languages. Some philosophers argue that second-order logic is not logic. Properties and relations are too obscure for rigorous foundational study, while sets and functions are in the purview of mathematics, not logic; logic should not have an ontology of its own. Other writers disqualify second-order logic because its consequence relation is not effective – there is no recursively enumerable, sound and complete deductive system for second-order logic. The deeper issues underlying the dispute concern the goals and purposes of logical theory. If a logic is to be a calculus, an effective canon of inference, then second-order logic is beyond the pale. If, on the other hand, one aims to codify a standard to which correct reasoning must adhere, and to characterize the descriptive and communicative abilities of informal mathematical practice, then perhaps there is room for second-order logic.

FIRST ORDER RAMAN SCATTERING FROM SEMICONDUCTOR QUANTUM DOTS

1989 ◽  
Vol 03 (08) ◽  
pp. 1167-1181 ◽  
Author(s):  
P.A.M. RODRIGUES ◽  
HILDA A. CERDEIRA ◽  
F. CERDEIRA
Keyword(s):  
Crystal Structure ◽  
Quantum Dots ◽  
Raman Spectrum ◽  
Raman Scattering ◽  
Bulk Material ◽  
Semiconductor Quantum Dots ◽  
Polycrystalline Materials ◽  
Nanometer Size ◽  
First Order ◽  
Linear Dimensions

We develop a model appropriate for describing the Raman spectrum of samples, containing a collection of semiconductor quantum dots with and without dispersion in their linear dimensions. These nanometer size crystallites are assumed to have the same atomic arrangement as that of the bulk material and to be embedded in a host material made up of a different semiconductor of the same crystal structure. The results from our calculations are compared to previous models for polycrystalline materials.

HIGH RESOLUTION RAMAN SPECTROSCOPY OF GASES: III. RAMAN SPECTRUM OF NITROGEN

1954 ◽  
Vol 32 (10) ◽  
pp. 630-634 ◽  
Author(s):  
B. P. Stoicheff
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
High Resolution ◽  
Electronic Spectra ◽  
Second Order ◽  
Published Data ◽  
Rotational Spectrum ◽  
Rotational Constants ◽  
Vibrational Constants

The pure rotational spectrum and the Q branch of the 1–0 band of N2 were photographed in the second order of a 21 ft. grating. An analysis of the rotational spectrum yields the rotational constants[Formula: see text]The value of B0 together with the Bν values obtained from the electronic bands of N2 gives[Formula: see text]Revised values of the vibrational constants have also been calculated using the results of the present work and the published data on the electronic spectra.

Raman Investigation of Photopolymerization Reactions of Single Optically Levitated Microparticles

1996 ◽  
Vol 50 (7) ◽  
pp. 823-828 ◽  
Author(s):  
C. Esen ◽  
T. Kaiser ◽  
G. Schweiger
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectrum ◽  
Raman Scattering ◽  
Polymerization Reaction ◽  
Single Particles ◽  
On Line ◽  
Optical Levitation ◽  
Monomer Droplet ◽  
Arc Excitation

Raman spectroscopy was used to investigate polymerization reactions in a single micrometer-sized monomer droplet. An Ar+ laser levitated the microparticles and simultaneously excited the Raman scattering. The polymerization reaction was initiated by exposing the monomer droplets to the UV radiation of a mercury arc excitation lamp. The Raman spectrum of the reacting particle was investigated on-line. The results demonstrate that the combination of the technique of optical levitation and Raman spectroscopy allows nondestructive in situ measurements of single particles and is therefore very useful for the study of fundamental processes.

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