Structural and Electrical Characterization of FeSix – Layers (1≤ X ≤2) Prepared by RTP of Fe Layers Sputtered on Si (100)

1995 ◽  
Vol 387 ◽  
Author(s):  
M. Líbezný ◽  
J. Poortmans ◽  
P. H. Amesz ◽  
R. A. Donaton ◽  
K. Kyllesbech Larsen ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Phase Transformations ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Phase Content ◽  
Silicon Heterojunctions ◽  
Emissivity Measurements

Abstractβ-FeSi2 is a semiconductor with a potential for photovoltaic and optoelectronic applications. The preparation of β-FeSi2-layers by rapid thermal processing (RTP) of Fe layers on silicon is investigated in this paper. Fe layers with typical thicknesses of 30 nm were sputtered on Si (100) substrates. We correlated the surface morphology of samples subjected to different RTP treatments with their composition and phase content. Phase transformations during the anneal were also studied by in-situ emissivity measurements. Rectifying and contacting behaviour of silicide/silicon heterojunctions prepared at several RTP-temperatures is presented at the end of this paper. Since it is not possible to prepare β-FeSi2-layers without a presence of either FeSi or α-FeSi2 metallic phases, these structures have poor heterojunction characteristics.

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
X Ray

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.

Characterization of Preclean Induced Surface Damage by Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
T. Y. Hsieh ◽  
K. H. Jung ◽  
D. L. Kwong ◽  
T. H. Koschmieder ◽  
J. C. Thompson
Keyword(s):  
Thermal Processing ◽  
Substrate Surface ◽  
Critical Role ◽  
Rapid Thermal Processing ◽  
Surface Damage ◽  
Optical Reflectance ◽  
High Temperature Processing ◽  
Dopant Redistribution

AbstractIn-situ precleaning of the substrate surface plays a critical role in Si epitaxial growth. We have demonstrated that the preclean process can cause considerable surface damage, which strongly depends on process parameters such as system base pressure and temperature. Nomarski optical microscopy, SEM, and optical reflectance were used to characterize the surface morphology. Optical reflectance was more sensitive to surface damage but was also strongly dependent on substrate dopant redistribution after high temperature processing.

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

Solar Energy ◽  
2006 ◽  
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
Glass Substrates

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3 minutes long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1-xGaxSe2-ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. Florida Solar Energy Center (FSEC) PV Materials Lab has developed excellent facilities for the preparation of CIGSS thin-film solar cells. A RTP reactor for preparation of CIGSS thin films on 10 cm × 10 cm substrates has been designed, assembled and tested at the FSEC PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by RTP technique. Materials characterization of these films was done by SEM, XEDS, XRD, AES, EPMA and electrical characterization was done by current-voltage measurements on soda lime glass substrates by RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets and without using toxic gases.

Optical and electrical characterization of ultra-thin oxides grown by rapid thermal processing in O2 or N2O

1993 ◽  
Vol 24 (4) ◽  
pp. 401-407 ◽  
Author(s):  
N. Gonon ◽  
J. Ciavatti ◽  
C. Plossu ◽  
B. Balland ◽  
D. Barbier ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization

scholarly journals In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

AIP Advances ◽  
2014 ◽  
Vol 4 (11) ◽  
pp. 117126 ◽  
Author(s):  
L. Arzubiaga ◽  
F. Golmar ◽  
R. Llopis ◽  
F. Casanova ◽  
L. E. Hueso
Keyword(s):  
Electrical Characterization ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Ripple Technique; a Novel Non-Contact Wafer Emissivity and Temperature Method for RTP

1991 ◽  
Vol 224 ◽  
Author(s):  
C. Schietinger ◽  
B. Adams ◽  
C. Yarling
Keyword(s):  
Optical Fiber ◽  
Measurement Technique ◽  
Thermal Processing ◽  
High Speed ◽  
Rapid Thermal Processing ◽  
Wafer Surface ◽  
Speed Measurement ◽  
Temperature Method ◽  
Emissivity Measurement ◽  
Emissivity Measurements

AbstractA novel wafer temperature and emissivity measurement technique for rapid thermal processing (RTP) is presented. The ‘Ripple Technique’ takes advantage of heating lamp AC ripple as the signature of the reflected component of the radiation from the wafer surface. This application of Optical Fiber Thermometry (OFT) allows high speed measurement of wafer surface temperatures and emissivities. This ‘Ripple Technique’ is discussed in theoretical and practical terms with wafer data presented. Results of both temperature and emissivity measurements are presented for RTP conditions with bare silicon wafers and filmed wafers.

Design and Fabrication of a Multi-Functional Nanomanipulator

2009 ◽  
Vol 419-420 ◽  
pp. 21-24
Author(s):  
Ming Chang ◽  
Chia Hung Lin ◽  
Chung Po Lin ◽  
Juti Rani Deka
Keyword(s):  
Degrees Of Freedom ◽  
Electrical Characterization ◽  
The Body ◽  
Rapid Expansion ◽  
Nano Materials ◽  
Nano Fabrication ◽  
Permissible Range ◽  
Manipulation System

With rapid expansion of nanotechnology, microminiaturization has become imperative in the field of micro/nano fabrication. A nanomanipulation system with high degrees of freedom that can perform nanomachining, nanofabrication and mechanical/electrical characterization of nanoscale objects inside a scanning electron microscope (SEM) is presented. The manipulation system consists of several individual operating units each having three linear stages and one rotational stage. The body of the manipulator is designed using the idea of superposition. Each operating unit can move in the permissible range of SEM’s vacuum chamber and can increase or decrease the number of units according to the requirement. Experiments were executed to investigate the in-situ electrical resistance of nano materials.

Characterization of PSG Films Reflowed in Steam Using Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
N. Shah ◽  
J. M. C. Vittie ◽  
N. Sharif ◽  
J. Nulman ◽  
A. Gat
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Operating Regime ◽  
Junction Depth ◽  
Thermal Oxide ◽  
Rapid Thermal Annealer ◽  
Flow Cycle ◽  
Phosphosilicate Glass

ABSTRACTThis study describes the use of a steam environment to reflow phosphosilicate glass (PSG) samples using a HEATPULSE® rapid thermal annealer. The samples comprised PSG over poly steps and of open contacts in PSG. It was observed that reflow occurs 50°C lower in steam than in dry O2. An acceptable flow cycle for 8 w/o P in PSG glass is 1050°C for 10 seconds in steam, while for 6 w/o P PSG it is 1100°C for 10 seconds. Steam is found to be an effective amibient for densification of the PSG film. The thermal oxide grown in the contact during opening reflow was determined to be near 140 A. The operating regime for a junction depth <0.4 um and a reflow angle < 75° is presented for 8 w/o P.

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