High Performance Of Gettering In Hydrogen Annealed Wafer

1995 ◽  
Vol 406 ◽  
Author(s):  
Ryuji Takeda ◽  
Kenro Hayashi ◽  
Fumio Tokuoka

AbstractThis paper reports on the study of the gettering of nickel contamination in hydrogen annealed CZ-silicon wafers by using method of wet chemical analysis. According to the wet chemical analysis, we believe that the hydrogen annealed wafer is of high quality in the region beneath the surface (DZ) and has a higher gettering ability for nickel compared with conventional CZ wafers. This observation is also in agreement with our MOS C-t measurements.

Planta Medica ◽  
2008 ◽  
Vol 74 (09) ◽  
Author(s):  
E Melliou ◽  
P Magiatis ◽  
A Michaelakis ◽  
G Koliopoulos ◽  
AL Skaltsounis

1994 ◽  
Vol 58 (391) ◽  
pp. 307-314 ◽  
Author(s):  
Mizuhiko Akizuki ◽  
Hirotugu Nisidoh ◽  
Yasuhiro Kudoh ◽  
Tomohiro Watanabe ◽  
Kazuo Kurata

AbstractA study of apatite crystals from the Asio mine, Japan, showed sectoral texture related to the growth of the crystal, and with optically biaxial properties within the sectors. Wet chemical analysis gave a composition Ca5(PO4)3(F0.64,OH0.38,Cl0.01)1.03 for the specimen.Additional diffraction spots were not observed in precession and oscillation X-ray photographs and electron diffraction photographs. Since the internal textures correlate with the surface growth features, it is suggested that the internal textures and the unusual optical properties were produced during nonequilibrium crystal growth. The fluorine/hydroxyl sites in hexagonal apatite are symmetrically equivalent in the solid crystal but, at a growth surface, this equivalence may be lost, resulting in a reduction of crystal symmetry. Heating of the apatite to about 850°C results in the almost complete disappearance of the optical anomalies due to disordering, which may be related to the loss of hydroxyl from the crystal.


Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 235
Author(s):  
Shuqi Zhao ◽  
Tongtong Yu ◽  
Ziming Wang ◽  
Shilei Wang ◽  
Limei Wei ◽  
...  

Two-dimensional (2D) materials driven by their unique electronic and optoelectronic properties have opened up possibilities for their various applications. The large and high-quality single crystals are essential to fabricate high-performance 2D devices for practical applications. Herein, IV-V 2D GeP single crystals with high-quality and large size of 20 × 15 × 5 mm3 were successfully grown by the Bi flux growth method. The crystalline quality of GeP was confirmed by high-resolution X-ray diffraction (HRXRD), Laue diffraction, electron probe microanalysis (EPMA) and Raman spectroscopy. Additionally, intrinsic anisotropic optical properties were investigated by angle-resolved polarized Raman spectroscopy (ARPRS) and transmission spectra in detail. Furthermore, we fabricated high-performance photodetectors based on GeP, presenting a relatively large photocurrent over 3 mA. More generally, our results will significantly contribute the GeP crystal to the wide optoelectronic applications.


2021 ◽  
Author(s):  
Lixiang Han ◽  
Mengmeng Yang ◽  
Peiting Wen ◽  
Wei Gao ◽  
nengjie huo ◽  
...  

One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...


Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 229
Author(s):  
Roberto Bergamaschini ◽  
Elisa Vitiello

The quest for high-performance and scalable devices required for next-generation semiconductor applications inevitably passes through the fabrication of high-quality materials and complex designs [...]


2015 ◽  
Vol 3 (38) ◽  
pp. 19294-19298 ◽  
Author(s):  
Xichang Bao ◽  
Qianqian Zhu ◽  
Meng Qiu ◽  
Ailing Yang ◽  
Yujin Wang ◽  
...  

High-quality CH3NH3PbI3 perovskite films were directly prepared on simple treated ITO glass in air under a relative humidity of lower than 30%.


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