The Formation of Radiative Defects at GaAs/GaInP Interface

1995 ◽  
Vol 417 ◽  
Author(s):  
Kazuo Uchida ◽  
Takayuki Arai ◽  
Koh Matsumoto
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Time Resolved ◽  
Organic Vapor ◽  
Spatially Distributed ◽  
Electron Hole Pair ◽  
Metal Organic ◽  
Related Defect ◽  
Time Resolved Photoluminescence

AbstractWe report the optical characteristics of 100 A˚ thick GaAs/Ga0.521n0.48P single quantum wells grown by Metal Organic Vapor Phase Epitaxy. We have confirmed from the 77 K photoluminescence (PL) that an optimum growth sequence is necessary to achieve the emission from the well (1.52 eV), otherwise only the deep emission band (1.46 eV) is observed. From the time-resolved photoluminescence and temperature dependent PL measurements, we assign that this 1.46 eV deep emission is a recombination of electron-hole pair in a vacancy-related defect which is spatially distributed at the imperfect GaAs/Ga 0.521n0.48P interface.

Microscopic Description of Radiative Recombinations in InGaN/GaN Quantum Systems

2002 ◽  
Vol 743 ◽  
Author(s):  
Aurelien Morel ◽  
Pierre Lefebvre ◽  
Thierry Taliercio ◽  
Bernard Gil ◽  
Nicolas Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Scaling Law ◽  
Quantum Systems ◽  
Electron Hole ◽  
Microscopic Description ◽  
Time Resolved ◽  
Electron Hole Pair ◽  
Time Resolved Photoluminescence ◽  
Localization Of Electrons

ABSTRACTRecombination dynamics in a variety of InGaN/GaN quantum systems has been studied by time resolved photoluminescence (PL). We have discovered that the time-decay of PL exhibits a scaling law: the nonexponential shape of this decay is preserved for quantum wells and quantum boxes of various sizes while their decay time varies over several orders of magnitude. To explain these results, we propose an original model for electron-hole pair recombination in these systems, combining the effects of internal electric fields and of carrier localization on a nanometer-scale. These two intricate effects imply a separate localization of electrons and holes. Such a microscopic description accounts very well for both the decays shape and the scaling law.

Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
A. Khan ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Optical Transitions ◽  
Time Resolved ◽  
Metal Organic ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTTime-resolved photoluminescence (PL) has been employed to study the optical transitions and their dynamical processes in GaN and InxGa1-xN epilayers, and GaN/GaN and GaN/ALxGa1-xN multiple quantum wells (MQW). We compare the results from both metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) grown samples. In addition, results are also compared with GaAs/ALxGa1-xAs MQW. It was found for all samples that the low temperature emission lines were dominated by radiative recombination transitions of either localized or free excitons, which demonstrates the high quality and purity of these III-nitride materials.

Optical Properties of Ingan/GaN Multi Quantum Well Structures

1997 ◽  
Vol 482 ◽  
Author(s):  
J. P. Bergman ◽  
N. Saksulv ◽  
J. Dalfors ◽  
P. O. Holtz ◽  
B. Monemar ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Rates ◽  
Energy Position ◽  
Electron Hole ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Lower Energy Band ◽  
Time Resolved Photoluminescence ◽  
Multi Quantum Well

AbstractA set of GaN/InGaN multiple quantum wells (QWs) with well thickness 30 Å and barrier thickness 60 Å were grown by MOCVD on sapphire substrates. The n-type Si doping of the InGaN QWs was varied, in order to produce a different electron concentration in the QWs for the different samples. Optical spectra were obtained by time resolved photoluminescence spectroscopy. The data show weak excitonic spectra from the QWs as well as a broad deeper emission with a much stronger intensity. The spectral shape becomes narrower and the energy position shifts to higher energies with increasing doping. The two different emissions are not easily separated in CW or time integrated spectra, but are clearly observed in a time resolved spectral measurement due to their different recombination rates. The deeper emission has a long and non-exponential decay, with an average decay time in the order of several hundred nanoseconds. The higher energy exciton emission has a much faster decay of about 1 ns. The lower energy band is tentatively explained as due to separately localized electron-hole (e-h) pairs in the QW.

scholarly journals Regions of Different Confinement in Low-Dimensional AlyInxGa1−x−yN Quantum Structures

2007 ◽  
Vol 2007 ◽  
pp. 1-6 ◽  
Author(s):  
A. Gröning ◽  
V. Pérez-Solórzano ◽  
M. Jetter ◽  
H. Schweizer
Keyword(s):  
Growth Parameters ◽  
Growth Conditions ◽  
Localized States ◽  
Time Resolved ◽  
Organic Vapor ◽  
Growth Interruption ◽  
Metal Organic ◽  
Low Dimensional ◽  
Time Resolved Photoluminescence ◽  
State Filling

The optical properties of metal-organic vapor phase epitaxy grown AlyInxGa1−x−yN quantum dot structures have been studied by time-resolved photoluminescence experiments. We investigated the recombination dynamics of the photo-exited carriers in dependence of the growth parameters such as aluminium flow and the duration of the growth interruption after the dot deposition. Our results confirm the presence of localized states, where the degree of localization is strongly dependent on the growth conditions. To describe this behavior, we propose a band structure with coupled potentials for these nanostructures. Finally, we demonstrate state filling to prove the zero-dimensional character of the strongly localized states in our quaternary quantum dots.

scholarly journals Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 689-695 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm−1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

Correlation between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

AbstractWe comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

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