TiO2:Ce/CeO2 High Performance Insulators For Thin Film Electroluminescent Devices

AbstractThe electrical properties of titanium dioxide thin films have been stabilised by cerium doping. These films have a high permittivity between 35 to 45 and withstand 650°C. Multilayer TiO2:Ce/CeO2 insulators have been fabricated. The breakdown voltage is increased by a factor 10 with a modest decrease in the permittivity (30 – 35 instead of 35 – 45).Electroluminescent devices (ELDs) with a classical ZnS:Mn phosphor have been prepared using TiO2:Ce as the first insulator and a TiO2:Ce/CeO2 multilayer as the second insulator. Compared with a standard ELD based on Y2O3 insulators, devices with the new insulators show a significant decrease of the threshold voltage along with a notable increase of the brightness. An important increase is also achieved in the total device efficiency which is maintained over a large range of brightness and transferred charge. Consequences of rapid thermal annealing and conventional thermal treatments on device performance have also been investigated.

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Improving the Organic Semiconductor- Metal Contact Interface in Printed High Performance Organic TFTs

MRS Proceedings ◽

10.1557/opl.2012.189 ◽

2012 ◽

Vol 1402 ◽

Author(s):

Kanan Puntambekar ◽

Lisa Stecker ◽

Kurt Ulmer ◽

Themistokles Afentakis ◽

Steven Droes

Keyword(s):

Organic Semiconductor ◽

High Performance ◽

Thin Film Transistor ◽

Device Performance ◽

Organic Thin Film ◽

Contact Interface ◽

Organic Thin Film Transistor ◽

Metal Electrodes ◽

Free Surfaces ◽

Gas Plasma

ABSTRACTOptimization of the interface between the organic semiconductor (OSC) & the source-drain (S/D) electrode is critical in order to improve organic thin film transistor (OTFT) device performance. This process typically involves coating the metal S/D electrodes with an optimal self-assembled thiol layer; a process that requires pristine metal surfaces for successful treatment. Obtaining contamination free surfaces can be challenging in the case of printed metal electrodes. Here we demonstrate an effective strategy to address this issue by introducing a brief low power forming gas plasma treatment prior to the surface coating step. We show a two orders of magnitude decrease in the contact resistance as a result of this treatment.

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High performance red phosphorescent organic electroluminescent devices with characteristic mechanisms by utilizing terbium or gadolinium complexes as sensitizers

Journal of Materials Chemistry C ◽

10.1039/c6tc05542g ◽

2017 ◽

Vol 5 (8) ◽

pp. 2066-2073 ◽

Cited By ~ 20

Author(s):

Rongzhen Cui ◽

Weiqiang Liu ◽

Liang Zhou ◽

Xuesen Zhao ◽

Yunlong Jiang ◽

...

Keyword(s):

High Performance ◽

Light Emitting Diodes ◽

Organic Light Emitting Diodes ◽

Color Purity ◽

Electroluminescent Devices ◽

Light Emitting ◽

Organic Light ◽

Gadolinium Complexes ◽

Organic Electroluminescent ◽

High Color Purity

High performance sensitized organic light-emitting diodes with high color purity were obtained by utilizing terbium or gadolinium complexes as sensitizers.

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High-performance fluorescent organic electroluminescent devices benefit from sensitization of thermally activated delayed fluorescence

Journal of Materials Chemistry C ◽

10.1039/d1tc04819h ◽

2021 ◽

Author(s):

Rongzhen Cui ◽

Liang Zhou ◽

Weisong Sun ◽

Wenxing Liu ◽

Jiahai Wang

Keyword(s):

High Performance ◽

Delayed Fluorescence ◽

Thermally Activated Delayed Fluorescence ◽

Electroluminescent Devices ◽

Fluorescent Material ◽

Thermally Activated ◽

Organic Electroluminescent

Efficient fluorescent electroluminescent devices were achieved by exploiting a thermally activated fluorescent material (3,5-bis(3,6-di-tert-butyl-9H-carbazol-9-yl)phenyl)(pyridin-4-yl)methanone (DTCBPy) as a sensitizer.

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Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

Nanomaterials ◽

10.3390/nano12020190 ◽

2022 ◽

Vol 12 (2) ◽

pp. 190

Author(s):

Ali Hassan ◽

Muhammad Azam ◽

Yeong Hwan Ahn ◽

Muhammad Zubair ◽

Yu Cao ◽

...

Keyword(s):

Graphene Oxide ◽

Dark Current ◽

High Performance ◽

Carrier Transport ◽

Defect Density ◽

Low Cost ◽

Degradation Process ◽

Device Performance ◽

Interface Engineering ◽

Defect Passivation

Organic–inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, better charge extraction, low dark current, and enhanced carrier lifetime. Moreover, the trilayer photodetector exhibits improved device performance with a high on/off ratio of 1.3 × 104, high responsivity of 3.38 AW−1, and low dark current of 1.55 × 10−11 A. The insertion of the GO layer also suppressed the perovskite degradation process and consequently improved the device stability. The current study focuses on the significance of interface engineering to boost device performance by improving interfacial defect passivation and better carrier transport.

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High-Performance Solution Processed Red Hyperfluorescent OLEDs Based on Cibalackrot

Journal of Materials Chemistry C ◽

10.1039/d1tc04937b ◽

2022 ◽

Author(s):

Nicholle R. Wallwork ◽

Masashi Mamada ◽

Atul Shukla ◽

Sarah K. M. McGregor ◽

Chihaya Adachi ◽

...

Keyword(s):

High Performance ◽

Light Emitting Diodes ◽

Organic Light Emitting Diodes ◽

Device Performance ◽

Solution Processed ◽

Light Emitting ◽

Organic Light

Hyperfluorescent organic light-emitting diodes (OLEDs) has allowed remarkable device performances to be achieved using fluorescent emitters. Superior device performance has been realised using thermally evaporated emissive layers. However, for future...

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ZnS:Mn Electroluminescent Devices with High Performance Using SiO2/Ta2O5/SiO2 Insulating Layer

Springer Proceedings in Physics - Electroluminescence ◽

10.1007/978-3-642-93430-8_55 ◽

1989 ◽

pp. 273-276

Author(s):

M. Yoshida ◽

T. Yamashita ◽

K. Taniguchi ◽

K. Tanaka ◽

T. Ogura ◽

...

Keyword(s):

High Performance ◽

Insulating Layer ◽

Electroluminescent Devices

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PHARMACOGNOSTIC SCREENING STUDIES OF JUSTICIA GENDARUSSA BURM. LEAVES FOUND IN DEHRADUN DISTRICT OF UTTARAKHAND

Asian Journal of Pharmaceutical and Clinical Research ◽

10.22159/ajpcr.2017.v10s4.21342 ◽

2017 ◽

Vol 10 (16) ◽

pp. 83

Author(s):

Nondita Prasad ◽

Balbir Singh ◽

Diksha Puri

Keyword(s):

Thin Layer ◽

High Performance ◽

Large Range ◽

Quantitative Estimation ◽

Biological Activities ◽

Water Soluble ◽

Phytochemical Screening ◽

Geographical Differences ◽

Layer Chromatography ◽

Chloroform Methanol

Objective: Justicia gendarussa Burm. (family Acanthaceae) commonly known as nilinirgundi, is found in Southern India possesses multifarious biological activities due to large range of phytoconstituents. The present study is designed to evaluate the various pharmacognostic parameters of the leaves of J. gendarussa, found in Dehradun district of Uttarakhand for its authentication.Methods: Fresh leaves were taken for the morphological and microscopical (histology and powder) evaluation. Physicochemical parameters (ash values, extractives values, florescence analysis, microbial contamination, and loss on drying) were also performed. Phytochemical screening and thin-layer chromatographic fingerprinting of extracts were also performed to check the presence of various phytoconstituents.Results: The microscopy of the leaves evinced the presence of anisocytic stomata, cuboidal calcium oxalate crystals, cystoliths, multicellular covering trichomes, starch grains and oil globules. The quantitative estimation of total ash, acid insoluble, and water soluble ash values were 13.8%, 1.2%, and 4.5% w/w, respectively. The alcohol soluble and water soluble extractives were estimated as 11.45% and 15.67% w/w, respectively. Foreign organic matter and loss on drying values obtained were 0.23% and 11.2% w/w. Phytochemical screening of petroleum ether, chloroform, methanol and aqueous extracts ascertained the presence of alkaloids, phenolic compounds, saponins, tannins, carbohydrates, flavonoids, glycosides, steroids and triterpenoids. The thin-layer chromatography (TLC) profiling of different extracts revealed the presence of potential compounds which can be further isolated with the help of high-performance liquid chromatography or high-performance TLC.Conclusion: The results of this study provide suitable standards for the authentication of this plant. In the present study, there are certain variations observed from the evaluations done on the same species by other research groups. The probable reason suggested for such disparity is due to the environmental and geographical differences in the locations of the plant collected.

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Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device

Nanoscale ◽

10.1039/d0nr02170a ◽

2020 ◽

Vol 12 (28) ◽

pp. 15443-15452

Author(s):

Ying Guo ◽

Feng Pan ◽

Gaoyang Zhao ◽

Yajie Ren ◽

Binbin Yao ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Device Performance ◽

Gate Length ◽

Germanium Selenide ◽

Technology Roadmap

ML GeSe field-effect transistors have an excellent device performance, even at the 1 nm gate-length. The on-state current of the devices can fulfill the requirements of the International Technology Roadmap for Semiconductors (2013 version).

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Optical Filter for Fabricating Self-Aligned Amorphous Si TFTS

MRS Proceedings ◽

10.1557/proc-557-677 ◽

1999 ◽

Vol 557 ◽

Cited By ~ 5

Author(s):

P. Mei ◽

J. P Lu ◽

C. Chua ◽

J. Ho ◽

Y. Wang ◽

...

Keyword(s):

High Performance ◽

Uv Light ◽

Optical Filter ◽

Device Performance ◽

Gate Electrode ◽

Large Area ◽

New Process ◽

Amorphous Si ◽

Difficult Challenge ◽

Channel Region

AbstractSelf-aligned structures for bottom-gate amorphous Si TFTs provide a number of advantages, including reduced parasitic capacitance, smaller device dimensions, and improved uniformity in device performance for large-area electronics. A difficult challenge in making self-aligned TFT structures is the necessity of making source/drain contacts that exhibit low contact resistances and that are precisely aligned relative to the gate electrode. In this article, we describe a novel process for fabricating self-aligned amorphous Si TFTs. This process utilizes a pulsed excimer laser (308 nm) to dope or to activate dopants in a-Si to form the source/drain contacts. An important feature of the device design is an optical filter to protect the a-Si channel region from radiation damage during the 308 nm laser process. However, the optical filter allows the transmission of the uv light for lithography exposure from the backside of the substrate to align the channel region with the gate electrode. This new process enables the fabrication of high performance self-aligned a-Si TFTs with poly-Si source and drain contacts.

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