Improved Copper Chemical Vapor Deposition Process by Applying Substrate Bias

1996 ◽  
Vol 427 ◽  
Author(s):  
Won-Jun Lee ◽  
Sa-Kyun Rha ◽  
Seung-Yun Lee ◽  
Dong-Won Kim ◽  
Soung-Soon Chun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Copper Film ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Substrate Bias ◽  
Value Analysis ◽  
Poling Direction ◽  
Negative Substrate Bias

AbstractThe substrate bias was applied during the chemical vapor deposition (CVD) process of copper in an effort to change the adsorption behaviors of the reactant. Copper films were deposited on TiN and SiO2 from Cu(hfac)(tmvs) with the substrate bias and without one. The surface morphology, the thickness, the sheet resistance and the purity of the films were investigated. When the negative substrate bias of -30 V was applied to the substrate, the deposition rate of copper increased both on TiN and SiO2. No change was observed in the chemical composition of the copper film deposited with substrate bias in comparison with that of the copper film deposited with no bias. It was calculated that Cu(hfac) has the dipole moment whose direction is from copper to hfac. Under the d. c.electric field, dipole tends to align along the poling direction. Resulting from the overlapping population (OP) value analysis, the improvement of deposition rate under negative substrate bias was explained due to the adsorption of copper atom in Cu(hfac) species directly onto the substrate by the electric field applied between the substrate and the gas showerhead.

Parametric Modeling and Optimization of Chemical Vapor Deposition Process

2008 ◽  
Author(s):  
Po Ting Lin ◽  
Yogesh Jaluria ◽  
Hae Chang Gea
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Parametric Modeling ◽  
Parametric Models ◽  
Modeling And Optimization

This paper focuses on the parametric modeling and optimization of the Chemical Vapor Deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using Radial Basis Function (RBF) for various functions which are related to the deposition rate and uniformity of the thin films are studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.

Computational Study of Reactive Flow in Halide Chemical Vapor Deposition of Silicon Carbide Epitaxial Film

2008 ◽  
Author(s):  
Rong Wang ◽  
Ronghui Ma
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Computational Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Large Temperature ◽  
Processing Conditions ◽  
Wide Range

In this study, a comprehensive transport model is developed for Halide Chemical Vapor Deposition (HCVD) system which includes gas dynamics, heat and mass transfer, gas-phase and surface chemistry, and radio-frequency induction heating. This model addresses transport of multiple chemical species in high temperature environment with large temperature difference and complex chemical reactions in gas-phase and on the deposition surface. Numerical modeling of the deposition process in a horizontal hot-wall reactor using SiCl4/C3H8/H2 as precursors has been performed over a wide range of operational parameters to quantify the effects of processing parameters on the film growth. The simulations of the deposition process provide detailed information on the gas-phase composition as well as the distributions of gas velocity and temperature in the reactor. The deposition rate on the substrate surface is also predicted. The results illustrate that deposition temperature and the flow rate of carrier gas play an important role in determining the processing conditions and deposition rate. A high concentration of HCl exists in the growth chamber and the etching of the SiC films by HCl has significant effect on the deposition rate. The modeling approach can be further used to improve reactor design and optimization of processing conditions.

Effects of Substrate Bias on Tribological Properties of Diamondlike Carbon Thin Films Deposited Via Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition

2016 ◽  
Vol 138 (3) ◽  
Author(s):  
Nay Win Khun ◽  
Anne Neville ◽  
Ivan Kolev ◽  
Hongyuan Zhao
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Substrate Bias ◽  
Deposition Parameters ◽  
Film Forming ◽  
Diamondlike Carbon ◽  
Steel Substrates ◽  
Negative Substrate Bias

In this study, the structure and tribological performance of the diamondlike carbon (DLC) films were related to deposition parameters. The feasibility of the microwave-excited plasma-enhanced chemical vapor deposition (μW-PECVD) as a process to produce good quality DLC films was the focus. The DLC films were deposited on the steel substrates with a tungsten carbide interlayer via μW-PECVD. The negative substrate bias used during the film deposition was varied. The Raman results revealed that the increased negative substrate bias increased the sp3 bonding in the DLC films as a result of the increased kinetic energy of film-forming ions during the film deposition. The tribological results clearly indicated that the friction and wear of the DLC-coated steel samples against a 100Cr6 steel ball significantly decreased with increased negative substrate bias due to the significantly improved wear resistance of the DLC films.

Parametric Modeling and Optimization of Chemical Vapor Deposition Process

2009 ◽  
Vol 131 (1) ◽  
Author(s):  
Po Ting Lin ◽  
Yogesh Jaluria ◽  
Hae Chang Gea
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Parametric Modeling ◽  
Parametric Models ◽  
Modeling And Optimization

This paper focuses on the parametric modeling and optimization of the chemical vapor deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using radial basis function for various functions, which is related to the deposition rate and uniformity of the thin films, is studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.

Optical Emission Spectra Related to Microstructures of Diamond Film Deposited by Plasma Enhanced Chemical Vapor Deposition

2006 ◽  
Vol 321-323 ◽  
pp. 1691-1694
Author(s):  
Mikio Noda ◽  
Masayoshi Umeno ◽  
Hee Joon Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Amorphous Component ◽  
Optical Emission Spectra

Optical emission spectra from plasma during deposition of diamond film were investigated by an optic multi-channel spectrometer using a CCD array sensor. The diamond film was deposited by DC plasma enhanced (PE) chemical vapor deposition (CVD) using hydrogen and methane gas mixture, where substrate was located at near the plasma and the discharge was performed by intermittent discharge. When Pg during the deposition was increased from 50 to 250 Torr, the optical emissions of hydrogen (Hα and Hβ) and C2 were increased, and corresponding to these increases, deposition rate of the diamond film was increased and crystalline quality became superior. When Cm was changed from 1 to 3 %, the emission from C2 was increased, and whereas, the emission from hydrogen was decreased. Corresponding to these changes of the emission, the deposition rate of the film was increased and amorphous component in the deposited film was also increased. These results show that the increase of C2 results in the increase of the deposition rate, and increase of hydrogen is effective to eliminate amorphous component, and therefore, monitoring of the optical emission from hydrogen and C2 is useful for the deposition process of the diamond film.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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