Effects of Substrate Bias on Tribological Properties of Diamondlike Carbon Thin Films Deposited Via Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition

2016 ◽  
Vol 138 (3) ◽  
Author(s):  
Nay Win Khun ◽  
Anne Neville ◽  
Ivan Kolev ◽  
Hongyuan Zhao
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Substrate Bias ◽  
Deposition Parameters ◽  
Film Forming ◽  
Diamondlike Carbon ◽  
Steel Substrates ◽  
Negative Substrate Bias

In this study, the structure and tribological performance of the diamondlike carbon (DLC) films were related to deposition parameters. The feasibility of the microwave-excited plasma-enhanced chemical vapor deposition (μW-PECVD) as a process to produce good quality DLC films was the focus. The DLC films were deposited on the steel substrates with a tungsten carbide interlayer via μW-PECVD. The negative substrate bias used during the film deposition was varied. The Raman results revealed that the increased negative substrate bias increased the sp3 bonding in the DLC films as a result of the increased kinetic energy of film-forming ions during the film deposition. The tribological results clearly indicated that the friction and wear of the DLC-coated steel samples against a 100Cr6 steel ball significantly decreased with increased negative substrate bias due to the significantly improved wear resistance of the DLC films.

Improved Copper Chemical Vapor Deposition Process by Applying Substrate Bias

1996 ◽  
Vol 427 ◽  
Author(s):  
Won-Jun Lee ◽  
Sa-Kyun Rha ◽  
Seung-Yun Lee ◽  
Dong-Won Kim ◽  
Soung-Soon Chun ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Copper Film ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Substrate Bias ◽  
Value Analysis ◽  
Poling Direction ◽  
Negative Substrate Bias

AbstractThe substrate bias was applied during the chemical vapor deposition (CVD) process of copper in an effort to change the adsorption behaviors of the reactant. Copper films were deposited on TiN and SiO2 from Cu(hfac)(tmvs) with the substrate bias and without one. The surface morphology, the thickness, the sheet resistance and the purity of the films were investigated. When the negative substrate bias of -30 V was applied to the substrate, the deposition rate of copper increased both on TiN and SiO2. No change was observed in the chemical composition of the copper film deposited with substrate bias in comparison with that of the copper film deposited with no bias. It was calculated that Cu(hfac) has the dipole moment whose direction is from copper to hfac. Under the d. c.electric field, dipole tends to align along the poling direction. Resulting from the overlapping population (OP) value analysis, the improvement of deposition rate under negative substrate bias was explained due to the adsorption of copper atom in Cu(hfac) species directly onto the substrate by the electric field applied between the substrate and the gas showerhead.

Effect of substrate pregrowth treatments on characteristics of low-temperature diamondlike carbon films prepared by very-high-frequency chemical vapor deposition

2002 ◽  
Vol 17 (2) ◽  
pp. 451-455
Author(s):  
Zafar Waqar ◽  
Alexander Nikolaivech Titkov ◽  
Alexander Nikolaivech Andronov ◽  
Andrey Kosarev ◽  
Igor Makarenko
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Very High Frequency ◽  
Ceramic Substrates ◽  
Diamondlike Carbon ◽  
The Impact ◽  
Very High

Diamondlike carbon (DLC) films were grown on Si and ceramic substrates by very-high-frequency chemical vapor deposition at temperature of approximately 250 °C. Thin metal coatings from Ti, Ni, Pt, and Cu were deposited on the substrates before DLC film deposition. The impact of the pregrowth treatments of the substrates on surface morphology and emission properties of the grown DLC films was studied. The films deposited on ceramic substrates pretreated by Ti, Ni, and Pt coatings, with grainlike structures, demonstrated good emission currents and low threshold voltages among the deposited DLC films.

scholarly journals Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18493-18499
Author(s):  
Sergio Sánchez-Martín ◽  
S. M. Olaizola ◽  
E. Castaño ◽  
E. Urionabarrenetxea ◽  
G. G. Mandayo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Kinetics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Kinetics Analysis ◽  
Deposition Parameters ◽  
Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 377 ◽  
Author(s):  
G. Stevens ◽  
P. Santos-Filho ◽  
S. Habermehl ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reaction Pathway ◽  
Total Concentration ◽  
Chemical Vapor ◽  
Reaction Model ◽  
Film Deposition ◽  
Growth Surface ◽  
Remote Plasma ◽  
Silicon Nitride Films

ABSTRACTWe have deposited Si-nitride thin films by remote plasma-enhanced chemical-vapor deposition using different combinations of hydrogen and deuterium source gases. In one set of experiments, NH3 and SiH4 were injected downstream from a He plasma and the ratio of NH3 to SiH4 was adjusted so that deposited films contained IR-detectable bonded-H in SiN-H arrangements, but not in Si-H arrangements. Similar results were obtained using the same ND3 to SiD4 flow ratio; these films contained only SiN-D groups. However, films prepared from ND3 and SiH4 displayed both SiN-D and SiN-H groups in essentially equal concentrations establishing that H and D atoms bonded to N are derived from both source gases SiH (D) 4 and NH (D) 3, and further that inter-mixing of H and/or D atoms occurs at the growth surface. This reaction pathway is supported by additional studies in which films were grown from SD4 and ND3 with either i) He or ii) He/H2 mixtures being plasma excited. The films grown from the deuterated source gases without H2, displayed only SiN-D bands, whereas the films grown using the He/H2 mixture displayed both SiN-H and SiN-D bands. The total concentration of N-H and N-D bonds in the films grown from the He/H2 excitation was the same as the concentration of N-D, supporting the surface reaction model. In-situ mass spectrometry provides additional insights in the film deposition reactions.

Synthesis of multifunctional microdiamonds on stainless steel substrates by chemical vapor deposition

Carbon ◽  
2021 ◽  
Vol 171 ◽  
pp. 739-749
Author(s):  
Pratik Joshi ◽  
Ariful Haque ◽  
Siddharth Gupta ◽  
Roger J. Narayan ◽  
Jagdish Narayan
Keyword(s):  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Steel Substrates
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