Parametric Modeling and Optimization of Chemical Vapor Deposition Process

2009 ◽  
Vol 131 (1) ◽  
Author(s):  
Po Ting Lin ◽  
Yogesh Jaluria ◽  
Hae Chang Gea
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Parametric Modeling ◽  
Parametric Models ◽  
Modeling And Optimization

This paper focuses on the parametric modeling and optimization of the chemical vapor deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using radial basis function for various functions, which is related to the deposition rate and uniformity of the thin films, is studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.

Parametric Modeling and Optimization of Chemical Vapor Deposition Process

2008 ◽  
Author(s):  
Po Ting Lin ◽  
Yogesh Jaluria ◽  
Hae Chang Gea
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Parametric Modeling ◽  
Parametric Models ◽  
Modeling And Optimization

This paper focuses on the parametric modeling and optimization of the Chemical Vapor Deposition (CVD) process for the deposition of thin films of silicon from silane in a vertical impinging CVD reactor. The parametric modeling using Radial Basis Function (RBF) for various functions which are related to the deposition rate and uniformity of the thin films are studied. These models are compared and validated with additional sampling data. Based on the parametric models, different optimization formulations for maximizing the deposition rate and the working areas of thin film are performed.

Study of SiC’s Mechanical Property Variance Caused by Film Thickness

2015 ◽  
Vol 645-646 ◽  
pp. 400-404
Author(s):  
Zong Lei Jiao ◽  
Jian Zhu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Mechanical Property ◽  
Chemical Vapor Deposition ◽  
Elastic Modulus ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Indentation Load

The mechanical properties of SiC thin films deposited by chemical vapor deposition process on silicon substrate are studied using nanoindentation techniques. The SiC thin films are of three different thicknesses: 1.6μm、4.5μm、9μm. In this study, nanoindentation method is preferred due to its reliability and accuracy on determining mechanical properties from indentation load-displacement data. The mechanical properties of elastic modulus and hardness are characterized. 1.6μm SiC thin film has the following values: E=345.73Gpa, H=33.71Gpa; 4.5μm SiC thin film has the following values: E=170.18Gpa, H=10.33Gpa; 9μm SiC thin film: E=167.96Gpa, H=9.48Gpa

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

Experimental Study of the Effect of Precursor Composition On the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process

2021 ◽  
Author(s):  
Omar D. Jumaah ◽  
Yogesh Jaluria
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Transport Processes ◽  
Carrier Gas ◽  
Precursor Composition

Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are determined by the thermal transport processes and chemical reactions occurring in the reactor, and are manipulated by controlling the operating conditions and the reactor geometrical configuration. In this study, the epitaxial growth of GaN thin films on sapphire (AL2O3) substrates is carried out in two commercial MOCVD systems. This paper focuses on the composition of the precursor and the carrier gases, since earlier studies have shown the importance of precursor composition. The results show that the flow rate of trimethylgallium (TMG), which is the main ingredient in the process, has a significant effect on the deposition rate and uniformity of the films. Also the carrier gas plays an important role in deposition rate and uniformity. Thus, the use of an appropriate mixture of hydrogen and nitrogen as the carrier gas can improve the deposition rate and quality of GaN thin films.

Metalorganic Deposition (MOD): A Nonvacuum, Spin-on, Liquid-Based, Thin Film Method

MRS Bulletin ◽  
1989 ◽  
Vol 14 (10) ◽  
pp. 48-53 ◽  
Author(s):  
J.V. Mantese ◽  
A.L. Micheli ◽  
A.H. Hamdi ◽  
R.W. Vest
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Organic Precursor ◽  
Metalorganic Deposition ◽  
Constituent Elements ◽  
Film Method

There are many methods of depositing thin film materials: thermal evaporation, sputtering, electron or laser beam evaporation, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE). A good survey of many of the deposition methods appears in the 1988 November and December issues of the MRS BULLETIN. One method not included in that survey, however, is metalorganic deposition (MOD), a powerful method for depositing a variety of materials.Metalorganic deposition is not to be confused with metalorganic chemical vapor deposition (MOCVD), which is a gaseous deposition method. MOD is a nonvacuum, liquid-based, spin-on method of depositing thin films. A suitable organic precursor, dissolved in solution, is dispensed onto a substrate much like photoresist. The substrate is spun at a few thousand revolutions per minute, removing the excess fluid, driving off the solvent, and uniformly coating the substrate surface with an organic film a few microns thick. The soft metalorganic film is then pyrolyzed in air, oxygen, nitrogen, or other suitable atmosphere to convert the metalorganic precursors to their constituent elements, oxides, or other compounds. Figure 1 shows a schematic of the deposition process including a prebake and annealing (if necessary).

Nucleation And Growth of Yttria-Stabilized Zirconia Thin Films Using Combustion Chemical Vapor Deposition

2002 ◽  
Vol 756 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Sergey Yarmolenko ◽  
Qiuming Wei
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Nucleation Rate ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Total Metal ◽  
Vapor Deposition Technique

ABSTRACTLiquid fuel combustion chemical vapor deposition technique was successfully used for YSZ thin film processing. The nucleation rates were obtained for the samples processed at different temperatures and total-metal-concentrations in the liquid fuel. An optimum substrate temperature was found for the highest nucleation rate. The nucleation rate was increased with the total-metal-concentration. Structural evolution of the thin film in the early processing stage was studied with regard to the formation of nuclei, crystallites and final crystals on the films. The films were found to be affected by high temperature annealing. The crystals and the thin films were characterized with scanning electron microscopy.

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