Oxidation Resistant Dilute Copper (Boron) Alloy Films Prepared by DC-Magnetron Cosputtering

1996 ◽  
Vol 428 ◽  
Author(s):  
S. Hymes ◽  
K. S. Kumar ◽  
S. P. Murarka ◽  
W. Wang ◽  
W. A. Lanford
Keyword(s):  
Integrated Circuits ◽  
Pure Copper ◽  
Residual Resistivity ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Alloy Films ◽  
Oxidation Rates ◽  
Silicon Integrated Circuits ◽  
Oxidation Resistant ◽  
The Common

AbstractTo enhance the corrosion resistance and reliability of the proposed copper interconnections in silicon integrated circuits, alloying with small amounts thermodynamically favorable elements has been pursued. In the present investigation dilute copper (boron) alloy thin films (in boron concentration range of 0–4 at % in copper) were deposited by DC magnetron co-sputtering using a high purity copper and Cu-4 at. % B targets. Films were then annealed in Ar-3% H2, pure Ar, vacuum, and air ambients in the temperature range of 200–500°C. Sheet resistance, Rutherford backscattering, x-ray diffraction measurements were made to characterize the films. The residual resistivity of the as-deposited alloy films was found to be 5.3 μΩ-cm/at %. To obtain sufficiently low working resistivity, an alloy content below 0.5 at % is suggested for application as a potential metallization material. The addition of boron, which is the common dopant in Si. to the copper films offers considerable oxidation protection. The resulting oxidation rates are considerably lower than that for pure copper films. All this will be presented and discussed.

Oxidation Resistant Dilute Copper (Boron) Alloy Films Prepared by DC-Magnetron Cosputtering

1996 ◽  
Vol 427 ◽  
Author(s):  
S. Hymes ◽  
K. S. Kumar ◽  
S. P. Murarka ◽  
W. Wang ◽  
W. A. Lanford
Keyword(s):  
Integrated Circuits ◽  
Pure Copper ◽  
Residual Resistivity ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Alloy Films ◽  
Oxidation Rates ◽  
Silicon Integrated Circuits ◽  
Oxidation Resistant ◽  
The Common

AbstractTo enhance the corrosion resistance and reliability of the proposed copper interconnections in silicon integrated circuits, alloying with small amounts thermodynamically favorable elements has been pursued. In the present investigation dilute copper (boron) alloy thin films (in boron concentration range of 0-4 at % in copper) were deposited by DC magnetron co-sputtering using a high purity copper and Cu-4 at % B targets. Films were then annealed in Ar-3% H2, pure Ar, vacuum, and air ambients in the temperature range of 200–500°C. Sheet resistance, Rutherford backscattering, x-ray diffraction measurements were made to characterize the films. The residual resistivity of the as-deposited alloy films was found to be 5.3 μΩ-cm/at %. To obtain sufficiently low working resistivity, an alloy content below 0.5 at % is suggested for application as a potential “metallization material. The addition of boron, which is the common dopant in Si, to the copper films offers considerable oxidation protection. The resulting oxidation rates are considerably lower than that for pure copper films. All this will be presented and discussed.

Capacitance-Voltage, Current Voltage, and Thermal Stability of Copper Alloyed With Aluminum or Magnesium

1998 ◽  
Vol 514 ◽  
Author(s):  
T. Suwwan de Felipe ◽  
S. P. Murarka ◽  
S. Bedell ◽  
W. A. Lanford
Keyword(s):  
Thermal Treatment ◽  
Integrated Circuits ◽  
Pure Copper ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Current Voltage ◽  
Resistance To Oxidation ◽  
Silicon Integrated Circuits ◽  
Capacitance Voltage ◽  
Copper Aluminum

ABSTRACTCopper alloyed with small amounts of aluminum or magnesium has recently been suggested as a promising material for interconnect applications in silicon integrated circuits. This work reports the results of the investigation of the electrical (capacitance-voltage and current-voltage) stability of the metal-oxide-semiconductor capacitor made with copper-0.5 at. % aluminum and copper-2 at. % magnesium as metal, deposited on thermally oxidized silicon substrates. Effect of thermal treatment in vacuum ambient before and/or during the electrical testing was investigated. The resistance to oxidation of these alloys was also investigated. The results show that copper magnesium, after a thermal treatment of 350°C or higher, produces a passivating layer at the interfaces that has excellent corrosion resistance and very stable behavior in terms of capacitance-voltage and current-voltage measurements. Copper aluminum performed adequately, much better than pure copper but was inferior to copper magnesium.

Simulation of the Growth of Copper Films for Micro and Nano-Electronics

2006 ◽  
Vol 51 ◽  
pp. 167-173
Author(s):  
M. Cobian ◽  
E. Machado ◽  
M. Kaczmarski ◽  
B. Braida ◽  
P. Ordejon ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Density Functional ◽  
Large Scale ◽  
Copper Films ◽  
High Quality ◽  
Functional Theory ◽  
Barrier Layers ◽  
The Common ◽  
Materials Used ◽  
Poor Adhesion

Copper is a desirable material to replace aluminum-based alloys in the metallization of very large-scale integrated circuits, due to its high conductivity and reduced electromigration. However, practical ways to grow high quality copper layers on top of the common materials used as barrier layers on silicon is problematic, because of several issues, like poor adhesion and reduced coverage of high aspect-ratio surface features. We will describe efforts in developing procedures and chemical compounds for the growth of high quality films of copper on barrier layers. Our work is based on ab-initio calculations of the energetics and dynamics of the growth processes involved, including the interaction of the chemicals with the surfaces. The calculations presented use density functional theory, and in particular the SIESTA code.

Electrical Invasiveness of Grinding and Polishing Silicon Integrated Circuits Down to 1 μm Remaining Silicon Thickness

2016 ◽  
Author(s):  
Robert Chivas ◽  
Scott Silverman ◽  
Michael DiBattista ◽  
Ulrike Kindereit
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Electron Hole ◽  
Analysis Techniques ◽  
Silicon Integrated Circuits ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Silicon Thickness ◽  
Performance Timing ◽  
Grinding And Polishing

Abstract Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is expected, possibly altering the performance (timing) of integrated circuits in addition to electron-hole pair generation. In this work, a study of the electrical invasiveness due to grinding and polishing silicon integrated circuits to ultra-thin (< 5 um global, ~ 1 um local) remaining thickness is presented.

scholarly journals Multiscale Copper-µDiamond Nanostructured Composites

2012 ◽  
Vol 730-732 ◽  
pp. 925-930
Author(s):  
Daniela Nunes ◽  
Vanessa Livramento ◽  
Horácio Fernandes ◽  
Carlos Silva ◽  
Nobumitsu Shohoji ◽  
...  
Keyword(s):  
Pure Copper ◽  
Thermal Stabilization ◽  
Hot Extrusion ◽  
Processing Parameters ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Optimal Processing ◽  
Novel Approach ◽  
Transmission Electron

Nanostructured copper-diamond composites can be tailored for thermal management applications at high temperature. A novel approach based on multiscale diamond dispersions is proposed for the production of this type of materials: a Cu-nDiamond composite produced by high-energy milling is used as a nanostructured matrix for further dispersion of micrometer sized diamond. The former offers strength and microstructural thermal stability while the latter provides high thermal conductivity. A series of Cu-nDiamond mixtures have been milled to define the minimum nanodiamond fraction suitable for matrix refinement and thermal stabilization. A refined matrix with homogenously dispersed nanoparticles could be obtained with 4 at.% nanodiamond for posterior mixture with mDiamond and subsequent consolidation. In order to define optimal processing parameters, consolidation by hot extrusion has been carried out for a Cu-nDiamond composite and, in parallel, for a mixture of pure copper and mDiamond. The materials produced were characterized by X-ray diffraction, scanning and transmission electron microscopy and microhardness measurements.

Ba-, Si- and vacancy-rich phlogopites from the talc-bearing sulfide ore deposit of La Creuse, Beaujolais, France

2018 ◽  
Vol 82 (5) ◽  
pp. 1187-1210
Author(s):  
Marie-Lola Pascal ◽  
Michel Fonteilles ◽  
Véronique Tournis ◽  
Benoît Baptiste ◽  
Jean-Louis Robert ◽  
...  
Keyword(s):  
Goodness Of Fit ◽  
Monoclinic Space Group ◽  
Excess Charge ◽  
Formula Unit ◽  
X Ray Diffraction ◽  
Ore Deposit ◽  
Sulfide Ore ◽  
The Common ◽  
The Stability ◽  
High Level

ABSTRACTBa-rich and Si-rich phlogopites occur in the talc-bearing rocks of the La Creuse sulfide ore deposit in Beaujolais, France. They form a group of compositions completely separated from the common Al-rich phlogopites that occur in the surrounding talc-free metasiltites and metarhyolites, with higher Ba and Mg and lower Al contents. The Ba-rich phlogopites have a relatively narrow compositional range (0.24 to 0.80 Ba per formula unit, for 44 valencies) with high and constant Si (5.8 atoms per formula unit, apfu) and Mg + Fe (5.6 apfu), probably buffered by the presence of talc. Compared to low-Al phlogopites from talc-free rocks, the excess charge introduced by the BaK–1 substitution is compensated by interlayer vacancies. Such a high level of interlayer vacancy (0.56 pfu), related to the talc-producing metasomatic conditions, is essential for the stability of this special group of Ba-rich and Si-rich phlogopites.Single crystal X-ray diffraction analyses were performed. Ba-rich and Si-rich phlogopite is monoclinic, space group C2/m, (R = 5.31%) with a = 5.3185(5), b = 9.2136(9), c = 10.1349(11) Å and β = 100.131(11)°. The occupancies of Mg/Fe and K/Ba were refined exploring different vacancies. The solutions giving the best R factor (4.77%) and goodness-of-fit (1.06) are obtained with 15% < vacancy < 40% at the interlayer site.

Hierarchical Nanostructured ZnO-CuO Nanocomposite and its Photocatalytic Activity

2015 ◽  
Vol 35 ◽  
pp. 21-26 ◽  
Author(s):  
Susmita Das ◽  
Vimal Chandra Srivastava
Keyword(s):  
Photocatalytic Activity ◽  
Pure Copper ◽  
Ultra Violet ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultra Violet Radiation ◽  
One Step ◽  
Uv Visible

Metal oxide nanocomposite (ZnO-CuO) was successfully synthesized by one step homogeneous coprecipitation method and further characterized by Fourier transform infrared spectroscopy (FTIR), scanning electron micrograph (SEM), X-ray diffraction analysis (XRD) and UV-visible diffuse reflectance spectra. XRD analysis exhibited presence of pure copper oxide and zinc oxide within the nanocomposite. SEM analysis indicated that the ZnO-CuO nanocomposite was consisted of flower shaped ZnO along with leaf shaped CuO. Photocatalytic activity of nanocomposite was evaluated in terms of degradation of methylene blue (MB) dye solution under ultra-violet radiation. Results showed that the photocatalytic efficiency of ZnO-CuO nanocomposite was higher than its individual pure oxides (ZnO or CuO).

Sign in / Sign up

Export Citation Format

Share Document