Gas Sensing Behavior of Porous ZnO Varistors Densified via Rate Controlled Sintering

1996 ◽  
Vol 431 ◽  
Author(s):  
Gaurav Agarwal ◽  
Robert F. Speyer

AbstractA hydrogen gas sensor based on shift in breakdown voltage of a ZnO varistor was developed. Changes in rate controlled sintering schedules resulted in significant variations in microstructure. Microstructures showing more intergranular porosity and finer grain size demonstrated a comparatively more linear and broad response to H2 concentration. A mechanism for the shift in breakdown voltage based on adsorbed oxygen is suggested for this unique and potentially very useful sensor.

2010 ◽  
Vol 445 ◽  
pp. 241-244 ◽  
Author(s):  
Ai Fukumori ◽  
Masayuki Takada ◽  
Yuji Akiyama ◽  
Yuuki Sato ◽  
Shinzo Yoshikado

With the goal of fabricating low-breakdown-voltage varistors, the effect of adding Ba to ZnO varistors on the ZnO grain size was investigated. Grain growth of ZnO could be markedly promoted by adding both Ba and Bi. The maximum grain size was approximately 150 μm and the minimum varistor voltage was approximately 12 V/mm. However, it had relatively poor tolerance characteristics for electrical degradation. It is speculated that when adding both Ba and Bi to a Mn–Co-added ZnO varistor, it is necessary to form the molten phases of Ba and Bi to promote grain growth of ZnO. It is also conjectured that the growth of ZnO grains is not promoted when Ba and Bi do not coexist in the molten phase because Ba forms compounds with Mn independently with the addition of small amounts of Bi.


2000 ◽  
Vol 66 (1-3) ◽  
pp. 277-279 ◽  
Author(s):  
Jiaqiang Xu ◽  
Qingyi Pan ◽  
Yu'an Shun ◽  
Zhizhuang Tian

2012 ◽  
Vol 442 ◽  
pp. 31-34
Author(s):  
Chang Qi Xia ◽  
Qi Bin Liu ◽  
Mo He

To obtain ZnO varistors with high voltage gradient, ZnO varistors were fabricated by traditional ceramic sintering technique, the effect of different sintering temperature (1135~1155 °C) on electrical properties of ZnO varistors were investigated. The experimental results show that with increasement of sintering temperature, the grain size of ZnO varistor ceramic becomes bigger, the voltage gradient of varistor decreases and the density is improved. When the sintering temperature is at 1135 °C, the voltage gradient of varistor is up to 329V/mm, the leakage current is 8μA and the density is 96.4%. When the sintering temperature is at 1140 °C, the voltage gradient of varistor is 301V/mm, the leakage current is 4μA and the density is 96.6%. Compared the results at 1135 °C with 1140 °C , it is found that the comprehensive electrical properties of ZnO varistors reach maximum at 1140 °C.


The Analyst ◽  
2018 ◽  
Vol 143 (17) ◽  
pp. 4136-4146 ◽  
Author(s):  
Yongan Tang ◽  
Jianxin He ◽  
Xiaoli Gao ◽  
Tianbao Yang ◽  
Xiangqun Zeng

Continuous and real-time ionic liquid based hydrogen gas sensor with high sensitivity, selectivity, speed, accuracy, repeatability and stability.


Author(s):  
K. K. Soni ◽  
J. Hwang ◽  
V. P. Dravid ◽  
T. O. Mason ◽  
R. Levi-Setti

ZnO varistors are made by mixing semiconducting ZnO powder with powders of other metal oxides e.g. Bi2O3, Sb2O3, CoO, MnO2, NiO, Cr2O3, SiO2 etc., followed by conventional pressing and sintering. The non-linear I-V characteristics of ZnO varistors result from the unique properties that the grain boundaries acquire as a result of dopant distribution. Each dopant plays important and sometimes multiple roles in improving the properties. However, the chemical nature of interfaces in this material is formidable mainly because often trace amounts of dopants are involved. A knowledge of the interface microchemistry is an essential component in the ‘grain boundary engineering’ of materials. The most important ingredient in this varistor is Bi2O3 which envelopes the ZnO grains and imparts high resistance to the grain boundaries. The solubility of Bi in ZnO is very small but has not been experimentally determined as a function of temperature.In this study, the dopant distribution in a commercial ZnO varistor was characterized by a scanning ion microprobe (SIM) developed at The University of Chicago (UC) which offers adequate sensitivity and spatial resolution.


2019 ◽  
Vol 11 (5) ◽  
pp. 05040-1-05040-4
Author(s):  
Sumanta Kumar Tripathy ◽  
◽  
Sanjay Kumar ◽  
Divya Aparna Narava ◽  
◽  
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