Structure and Magnetic Properties of Epitaxial Ordered FePd (001) Thin Films

1996 ◽  
Vol 441 ◽  
Author(s):  
V. Gehanno ◽  
A. Marty ◽  
B. Gilles
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Microscopy Study ◽  
Growth Direction ◽  
Electron Microscopy Study ◽  
Layer Growth ◽  
Layer By Layer ◽  
Easy Magnetization ◽  
Transmission Electron ◽  
Magnetization Axis

AbstractEquiatomic FePd (001) thin films have been deposited by Molecular Beam Epitaxy on a Pd (001) surface. We show that the degree of chemical order in the epitaxial layer is highly dependant on the temperature of deposition thus leading to a drastic change in the magnetic properties. At 25°C, while the RHEED oscillations reveal a layer by layer growth, the structural study demonstrates that the disordered phase has grown. In that case, the easy magnetization axis lies in the plane of the layer. At 350°C, the RHEED oscillations show that the growth proceeds bilayer by bilayer. We find that the tetragonal L10 ordered phase is stabilized with its 4-fold symmetry axis along the growth direction and this results in a perpendicularly magnetized thin film. The Transmission Electron Microscopy study reveals the presence of twins and antiphase boundaries in the ordered film.

Crystallographic and Magnetic Properties of CoCrPt Thin Films Investigated Using Single-Crystal Perpendicular Magnetic Thin Film Samples

2002 ◽  
Vol 721 ◽  
Author(s):  
Masaaki Futamoto ◽  
Kouta Terayama ◽  
Katsuaki Sato ◽  
Nobuyuki Inaba ◽  
Yoshiyuki Hirayama
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Single Crystal ◽  
Film Plane ◽  
Magnetic Thin Film ◽  
X Ray Diffraction ◽  
Easy Magnetization ◽  
Transmission Electron ◽  
Magnetization Axis

AbstractConditions to prepare good single-crystal CoCrPt magnetic thin film with the easy magnetization axis perpendicular to the film plane were investigated using oxide single-crystal substrates, Al2O3(0001), LaAlO3(0001), mica(0001), SrTiO3(111), and MgO(111). The best CoCrPt(0001) single-crystal thin film was obtained on an Al2O3(0001) substrate employing a non-magnetic CoCrRu underlayer. The crystallographic quality of single-crystal thin film was investigated using X-ray diffraction and high-resolution transmission electron microscopy. Some intrinsic magnetic properties (Hk, Ku) were determined for the single-crystal CoCrxPty thin films for a compositional range of x=17-20at% and y=0-17at%.

Transmission Electron Microscopy Study of Mod Plzt and Pnzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Jhing–Fang Chang ◽  
Chi Kong Kwok ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Dopant Concentration ◽  
Microscopy Study ◽  
Lattice Parameter ◽  
Electron Microscopy Study ◽  
Bulk Materials ◽  
Thin Foils ◽  
Transmission Electron ◽  
Coating Method

AbstractBoth La and Nd–doped PZT, i.e., PLZT and PNZT, ferroelectric thin films were prepared by the metalorganic deposition (MOD) process. The precursor solutions used were derived from lead acetate, lanthanum acetylacetonate, neodymium acetate, zirconium n–propoxide, and titanium iso–propoxide. The dopant concentration of the films analyzed by electron microprobe indicated a one–to–one correspondence between film composition and the composition of the precursor from which the film was made. In this study, the effects of Nd and La dopants in PZT films on Curie temperature was determined by in–situ hot–stage TEM and compared with those of bulk materials. Lattice parameter and phase transformation were determined by both X–ray and electron diffraction. Our observations were: (1) Curie temperature decreases with increasing dopant concentration for both thin foils and bulk ceramics, (2) for a given dopant concentration, Curie temperature and crystal tetragonality of PNZT thin foils is lower than those of PLZT samples, (3) Curie temperature of thin foils was found to be less than those of the corresponding bulk materials, and (4) ferroelectric domains is easily observed in both PLZT and PNZT TEM specimens prepared by the spin–coating method.

Transmission Electron Microscopy Study of the Microstructure of Np- Etched CdTe Thin Films

2001 ◽  
Vol 7 (S2) ◽  
pp. 558-559
Author(s):  
K.M. Jones ◽  
Y. Yan ◽  
F.S. Hasoon ◽  
M.M. Al-Jassim
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Device Fabrication ◽  
Back Contact ◽  
Transmission Electron ◽  
Cdte Thin Films ◽  
Cdte Surface

Polycrystalline CdTe is a promising candidate for solar cells due to its nearly ideal band-gap, high absorption coefficient, and ease of film fabrication. Small-area CdTe/CdS cells with efficiencies of 16.0% have been demonstrated. The structure of a typical CdTe/CdS solar cell (Figure 1) consists of a glass superstrate, on which a thin layer of SnO2 is deposited (front contact), n-type CdS, p-type CdTe, and a back contact. Prior to applying the back contact to the CdTe, etching of the CdTe surface using a mixture of nitric and phosphoric (NP) acids is normally needed. It is known that the etching depletes a crystalline CdTe surface of Cd and creates a Te-rich layer. Two effects of the Te-rich layer has been proposed, namely, forming a Te-CdTe low-series-resistance contact and improving CdTe device stability by the gettering of Cu. Thus, the NP etching is an important process in the CdTe device fabrication. in this paper, we report on transmission electron microscopy (TEM) study of the microstructure of the surface of NP etched CdTe thin films.

Electron Microscopy Study Of Mocvd-Grown Tio2Thin Films and Tio2/Al203 Interfaces

1990 ◽  
Vol 209 ◽  
Author(s):  
Y. Gao ◽  
K. L. Merkle ◽  
H. L. M. Chang ◽  
T. J. Zhang ◽  
D. J. Lam
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lattice Mismatch ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Rutile Structure ◽  
Atomic Structures ◽  
Transmission Electron ◽  
Twinning Direction ◽  
Mocvd Technique

ABSTRACTTiO2 thin films grown on (1120) sapphire at 800°C by the MOCVD technique have been characterized by transmission electron microscopy. The TiO2 thin films are single crystalline and have the rutile structure. The epitaxial orientation relationship between the TiO2 thin films (R) and the substrate (S) has been foundto be: (101)[010]R║(1l20)[0001]s. Growth twins in the films are commonly observed with the twin plane{101} and twinning direction <011>. Detailed atomic structures of the twin boundaries and TiO2/α-Al203 interfaces have been investigated by highresolution electron microscopy (HREM).When the interfaces are viewed in the direction of [010]R/[000l]S, the interfaces are found to be structurally coherent in the direction of [1Ol]R/[1100]s,in which the lattice mismatch at the interfaces is about 0.5%.

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