Complex Defects In Ci Doped ZnTe And CdTe

1996 ◽  
Vol 442 ◽  
Author(s):  
V. Valdna

AbstractPhotoluminescence and conductivity of doped with chlorine and copper ZnTe, Zn(SeTe) and CdTe are investigated. We suppose that interstitial tellurium and complex defects of Tei with a donor dopant Cl can significantly affect the luminescence spectra and conductivity value of ZnTe and CdTe. This assumption is confirmed experimentally. We found that copper dopant in CdTe: Cl can increase the resistivity value of p-type CdTe.

1989 ◽  
Vol 145 ◽  
Author(s):  
E. F. Schubert ◽  
T. D. Harris ◽  
J. E. Cunningham

AbstractOptical absorption and photoluminescence experiments are performed on GaAs doping superlattices, which have a δ-function-like doping profile of alternating n-type and p-type dopant sheets. Absorption and emission spectra reveal for the first time the clear signature of quantum-confined interband transitions. The peaks of the experimental absorption and luminescence spectra are assigned to calculated energies of quantum-confined transitions with very good agreement. It is shown that the employment of the δ-doping technique results in improved optical properties of doping superlattices.


2015 ◽  
Vol 242 ◽  
pp. 368-373 ◽  
Author(s):  
D.V. Danilov ◽  
O.F. Vyvenko ◽  
N.A. Sobolev ◽  
V.I. Vdovin ◽  
A.S. Loshachenko ◽  
...  

Defect structure, electrical properties and defect-related luminescence (DRL) of light emitting diodes (LED) with the active defect-rich region produced by oxygen implantation and a subsequent multistep annealing of silicon wafers were investigated. It was found that defect-rich regions possess an embedded positive charge in both n-and p-type of the samples whose origin was ascribed to oxygen precipitates (OP). The presence of that charge in the implanted region of p-based LED gave rise to the apparent conductivity type conversion and to a significant increase of free electron concentration in n-based LEDs. A significant difference in the shape and in the excitation dependence of luminescence spectra as well as in the properties of DLTS signals was found between p-and n-type samples. From an analysis of the obtained data the DRL band centered at 0.79 eV was ascribed to small OPs segregated at dislocations whose filling with the holes hinders optical transitions via dislocation-related states at 0.805 eV and the broad DRL band at energies higher than 0.81 eV was ascribed to large OPs.


1998 ◽  
Vol 94 (2) ◽  
pp. 265-270
Author(s):  
M. Bugajski ◽  
M. Godlewski ◽  
K. Regiński ◽  
P.O. Holtz ◽  
J.P. Bergman ◽  
...  

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Leroux ◽  
B. Beaumont ◽  
N. Grandjean ◽  
J. Massies ◽  
P. Gibart

ABSTRACTWe report a comparative study by luminescence and reflectivity of GaN grown on sapphire by MOVPE, HVPE and GSMBE. Whatever the growth technique, undoped GaN shows well resolved reflectivity spectra, allowing hetero-epitaxial strain to be taken into account in the interpretation of luminescence spectra. MOVPE provides the highest purity samples so far. From the luminescence study of n- and p-type doped samples, activation energies of 265 ± 10 meV and 34 ± 2 meV are deduced for Mg acceptors and Si donors respectively. From the luminescence spectra of HVPE grown samples, the presence of a perturbed interfacial n+ layer is evidenced.


2012 ◽  
Vol 7 (1) ◽  
Author(s):  
Thiago F de Oliveira ◽  
Sara CP Rodrigues ◽  
Luísa MR Scolfaro ◽  
Guilherme M Sipahi ◽  
Eronides F da Silva
Keyword(s):  

MRS Advances ◽  
2019 ◽  
Vol 4 (30) ◽  
pp. 1683-1689
Author(s):  
Ariel Loutati ◽  
Shir Zuarets ◽  
David Fuks ◽  
Yaniv Gelbstein

AbstractThermoelectric (TE) generators, converting waste heat to electricity regain their attractiveness for reduction of fossil fuels’ reliance, and consequently minimizing adverse environmental effects. Such generators are based on an electrical series connection of TE couples, which consist n- and p- type semiconducting legs divided by metallic bridges. While for intermediate temperatures of up to 500°C, n-type PbTe was extensively studied and employed in commercial TE power generation applications, its maximal efficiency, as was reflected by the TE figure of merit, ZT, was in most of the cases maximized at a narrow temperature range for any given donor dopant concentration. The most commonly applied donor dopants are iodine and bismuth. Yet, some interesting characteristics were recently proposed upon using Ti as a donor dopant. Up to date an impressive maximal ZT of ∼1.2 was obtained at 500°C, upon doping of PbTe by 0.1 at.% Ti, while no lower concentrations were ever investigated. In the current research a lower, 0.05 at.% Ti doping level was applied, leading to the highest ever reported ZT values, for any given Ti doped PbTe, up to 350°C. Since the chemical compatibility of Ti with PbTe, as a metallic bridge in such couples, is well established, mainly due to its low diffusion rates, the potential of generating a stable Ti-doped functionally graded n-type PbTe material, with enhanced TE performance, is currently being proposed.


Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.


Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.


2019 ◽  
Vol 476 (21) ◽  
pp. 3281-3293 ◽  
Author(s):  
Elodie Lebredonchel ◽  
Marine Houdou ◽  
Hans-Heinrich Hoffmann ◽  
Kateryna Kondratska ◽  
Marie-Ange Krzewinski ◽  
...  

TMEM165 was highlighted in 2012 as the first member of the Uncharacterized Protein Family 0016 (UPF0016) related to human glycosylation diseases. Defects in TMEM165 are associated with strong Golgi glycosylation abnormalities. Our previous work has shown that TMEM165 rapidly degrades with supraphysiological manganese supplementation. In this paper, we establish a functional link between TMEM165 and SPCA1, the Golgi Ca2+/Mn2+ P-type ATPase pump. A nearly complete loss of TMEM165 was observed in SPCA1-deficient Hap1 cells. We demonstrate that TMEM165 was constitutively degraded in lysosomes in the absence of SPCA1. Complementation studies showed that TMEM165 abundance was directly dependent on SPCA1's function and more specifically its capacity to pump Mn2+ from the cytosol into the Golgi lumen. Among SPCA1 mutants that differentially impair Mn2+ and Ca2+ transport, only the Q747A mutant that favors Mn2+ pumping rescues the abundance and Golgi subcellular localization of TMEM165. Interestingly, the overexpression of SERCA2b also rescues the expression of TMEM165. Finally, this paper highlights that TMEM165 expression is linked to the function of SPCA1.


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