Quantum-Confined Optical Interband Transitions in 5-Doped Doping Superlattices

1989 ◽  
Vol 145 ◽  
Author(s):  
E. F. Schubert ◽  
T. D. Harris ◽  
J. E. Cunningham
Keyword(s):  
Emission Spectra ◽  
Doping Profile ◽  
Luminescence Spectra ◽  
Interband Transitions ◽  
Doping Technique ◽  
Quantum Confined ◽  
P Type ◽  
First Time ◽  
Experimental Absorption ◽  
Good Agreement

AbstractOptical absorption and photoluminescence experiments are performed on GaAs doping superlattices, which have a δ-function-like doping profile of alternating n-type and p-type dopant sheets. Absorption and emission spectra reveal for the first time the clear signature of quantum-confined interband transitions. The peaks of the experimental absorption and luminescence spectra are assigned to calculated energies of quantum-confined transitions with very good agreement. It is shown that the employment of the δ-doping technique results in improved optical properties of doping superlattices.

ELECTRON STRUCTURE INVESTIGATIONS OF InGaP/GaAs(100) HETEROSTRUCTURES WITH InP QUANTUM DOTS

2007 ◽  
Vol 06 (03n04) ◽  
pp. 215-219
Author(s):  
E. P. DOMASHEVSKAYA ◽  
V. A. TEREKHOV ◽  
V. M. KASHKAROV ◽  
S. YU. TURISHCHEV ◽  
S. L. MOLODTSOV ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Emission Spectra ◽  
Luminescence Spectra ◽  
Partial Density ◽  
Edge Structure ◽  
X Ray ◽  
Metal Organic ◽  
Structure Investigations ◽  
First Time ◽  
Inp Quantum Dots

Ultrasoft X-ray emission spectra (USXES) and X-ray absorption near-edge structure (XANES) spectra with the use of synchrotron radiation in the range of P L2,3-edges were obtained for the first time for nanostructures with InP quantum dots grown on GaAs 〈100〉 substrates by vapor-phase epitaxy from metal–organic compounds. These spectra represent local partial density of states in the valence and conduction bands. The additional XANES peak is detected; its intensity depends on the number of monolayers forming quantum dots. Assumptions are made on the band-to-band origin of luminescence spectra in the studied nanostructures.

scholarly journals Численное моделирование токовой зависимости спектров излучения мощных импульсных лазеров, выполненных на основе двойных гетероструктур раздельного ограничения

2018 ◽  
Vol 44 (11) ◽  
pp. 46
Author(s):  
А.В. Рожков ◽  
Н.А. Пихтин
Keyword(s):  
Numerical Simulation ◽  
Active Region ◽  
Emission Spectra ◽  
Lasing Spectrum ◽  
Lasing Processes ◽  
Current Dependence ◽  
Power Pulse ◽  
First Time ◽  
High Power Pulse ◽  
Good Agreement

AbstractA new physical model is proposed for describing the observed current dependence of the emission spectra of high-power pulse lasers based on double separate-confinement heterostructures. The model takes into account the presence of isotype n–n heterojunctions at the interface between the waveguide and the active region. A numerical simulation of the lasing processes was performed. The resulting analytical current dependence of the 2D concentration of holes in the quantum well made it possible to evaluate for the first time the current dependence of the short-wavelength limit of the lasing spectrum. A good agreement was reached between the calculated and experimental characteristics.

Complex Defects In Ci Doped ZnTe And CdTe

1996 ◽  
Vol 442 ◽  
Author(s):  
V. Valdna
Keyword(s):  
Luminescence Spectra ◽  
Donor Dopant ◽  
P Type

AbstractPhotoluminescence and conductivity of doped with chlorine and copper ZnTe, Zn(SeTe) and CdTe are investigated. We suppose that interstitial tellurium and complex defects of Tei with a donor dopant Cl can significantly affect the luminescence spectra and conductivity value of ZnTe and CdTe. This assumption is confirmed experimentally. We found that copper dopant in CdTe: Cl can increase the resistivity value of p-type CdTe.

Multicanonical Molecular Dynamics Simulation Study of the Liquid-Solid and Solid-Solid Transitions in Lennard-Jones Clusters

2011 ◽  
Author(s):  
Toshihiro Kaneko ◽  
Kenji Yasuoka ◽  
Ayori Mitsutake ◽  
Xiao Cheng Zeng
Keyword(s):  
Molecular Dynamics ◽  
Heat Capacity ◽  
Transition Temperature ◽  
Peak Position ◽  
Temperature Curve ◽  
Dynamics Simulation ◽  
Lennard Jones ◽  
Dynamics Simulations ◽  
First Time ◽  
Good Agreement

Multicanonical molecular dynamics simulations are applied, for the first time, to study the liquid-solid and solid-solid transitions in Lennard-Jones (LJ) clusters. The transition temperatures are estimated based on the peak position in the heat capacity versus temperature curve. For LJ31, LJ58 and LJ98, our results on the solid-solid transition temperature are in good agreement with previous ones. For LJ309, the predicted liquid-solid transition temperature is also in agreement with previous result.

A compact UWB antenna with triple band notch reconfigurability

2020 ◽  
pp. 1-7
Author(s):  
Lei Li ◽  
Jingchang Nan ◽  
Jing Liu ◽  
Chengjian Tao
Keyword(s):  
Coplanar Waveguide ◽  
Ring Resonators ◽  
Uwb Antenna ◽  
Split Ring ◽  
X Band ◽  
Compact Size ◽  
Nested Structure ◽  
P Type ◽  
Good Agreement ◽  
Triple Band

Abstract A compact ultrawideband (UWB) antenna with reconfigurable triple band notch characteristics is proposed in this paper. The antenna consists of a coplanar waveguide-fed top-cut circular-shaped radiator with two etched C-shaped slots, a pair of split-ring resonators (SRRs) on the backside and four p-type intrinsic n-type (PIN) diodes integrated in the slots and SRRs. By controlling the current distribution in the slots and SRRs, the antenna can realize eight band notch states with independent switch ability, which allows UWB to coexist with 5G (3.3–4.4 GHz)/WiMAX (3.3–3.6 GHz), WLAN (5.15–5.825 GHz), and X-band (7.9–8.4 GHz) bands without interference. By utilizing a nested structure of C-shaped slots and SRRs on the backside, a compact size of 18 × 19.5 mm2 is achieved along with multimode triple band notch reconfigurability. The antenna covers a bandwidth of 3.1–10.6 GHz. A prototype is fabricated and tested. The simulated and experimental results are in good agreement.

Darstellung, Schwingungsspektren und Normalkoordinatenanalyse von Chloro-Bromo-Rhodaten(III) / Preparation, Vibration Spectra and Normal Coordinate Analysis of Chloro-Bromo-Rhodates(III)

1989 ◽  
Vol 44 (10) ◽  
pp. 1221-1227 ◽  
Author(s):  
W. Preetz ◽  
W. Kuhr
Keyword(s):  
Exchange Chromatography ◽  
Trans Isomers ◽  
Normal Coordinate ◽  
Valence Force ◽  
Trans Influence ◽  
Diethylaminoethyl Cellulose ◽  
Point Groups ◽  
First Time ◽  
Ir And Raman ◽  
Good Agreement

The mixed chloro-bromo-rhodates(III) [RhClnBr6-n]3-, n = 1-5, have been separated for the first time by ion exchange chromatography on diethylaminoethyl-cellulose. Due to the stronger trans-effect of Br, as compared with Cl, on treatment of [RhBr6]3- with conc. HCl nearly pure cis/fac-isomers for n = 2, 3, 4 are formed. The reaction of [RhCl6]3- with conc. HBr yields mixtures of the cis/trans-isomers for n = 2, 4, which cannot be separated, but mer-[RhCl3Br3]3 is formed stereospecifically. The IR and Raman spectra of all isolated mixed ligand complexes are completely assigned according to point groups Oh, D3d, C4v, C3v and C2v, supported by normal coordinate analyses based on a general valence force field. The good agreement of calculated and observed frequencies confirms the assignments. Due to the stronger trans-influence of Br as compared to Cl, in all asymmetric Cl—Rh—Br axes the Rh—Br bonds are strengthened and the Rh—Cl bonds are weakened, indicated by valence force constants for Rh—Br approximately 14% higher, for Rh—Cl 10% lower, as compared with the values calculated for symmetric Br—Rh—Br and Cl—Rh—Cl axes, respectively.

NIR and Upconversion Luminescence Properties of Nd3+ Doped in Gd2O3-CaO-SiO2-B2O3 Glass System

2014 ◽  
Vol 548-549 ◽  
pp. 124-128 ◽  
Author(s):  
S. Insiripong ◽  
S. Kaewjeang ◽  
U. Maghanemi ◽  
H.J. Kim ◽  
N. Chanthima ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Upconversion Luminescence ◽  
Emission Spectra ◽  
Concentration Quenching ◽  
Luminescence Spectra ◽  
Optical Absorption Spectra ◽  
Glass Matrices ◽  
Nir Luminescence

In this work, properties of Nd3+ in Gd2O3-CaO-SiO2-B2O3 glass systems with composition 25Gd2O3-10CaO-10SiO2-(55-x)B2O3-xNd2O3 where x = 0.0, 0.5, 1.0, 1.5, 2.0 and 2.5 mol% were investigated. The optical absorption spectra show peaks at 4F3/2 (877 nm) , 4F5/2+2H9/2 (802 nm), 4F7/2+4S3/2 (743 nm), 4F9/2 (682 nm), 2H11/2 (627 nm), 2G7/2 +4G5/2 (582 nm), 4G7/2 +2K13/2 (527 nm), 4G11/2 (481 nm), 2P1/2 (427 nm) and 2L15/2 + 4D1/2 + 1I11/2+ 4D5/2+ 4D3/2 (355 nm) reflecting the Nd3+ ions in glass matrices. The densities were increased with increasing of Nd2O3 concentration. This indicates the increase of the molecular weight by the replacement of B2O3 with a heavier Nd2O3 oxide in the glass. The upconversion luminescence spectra show bands at 393 nm for all Nd2O3 concentration and the strongest intensity from 2.5 % mol of Nd2O3 was obtained. For NIR luminescence, the intensity of Nd3+ emission spectra increases with increasing concentrations of Nd3+ up to 1.5 mol% and beyond 1.5 mol% the concentration quenching is observed.

Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GaInP2

1999 ◽  
Vol 588 ◽  
Author(s):  
Y. Ohno ◽  
S. Takeda
Keyword(s):  
Optical Property ◽  
Light Emission ◽  
Polarized Light ◽  
Structural Data ◽  
Luminescence Spectra ◽  
Antiphase Boundaries ◽  
Transmission Electron ◽  
Tem Method ◽  
Low Dimensional ◽  
First Time

AbstractWe have developed an apparatus for polarized cathodoluminescence (CL) spectroscopy combined with transmission electron microscopy (TEM), that enables us to obtain simultaneously structural data in higher spatial resolution by TEM and polarized luminescence spectra by CL of the same microscopic area. The polarized-CL/TEM method is very useful to study the optical properties of low-dimensional microstructures in semiconducting materials. We have applied the method to examine the optical property of antiphase boundaries in CuPt-ordered GaInP2 and found, for the first time, the polarized light emission from the APBs whose habit planes are parallel to the (T11) and (1T0) atomic planes.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1187-1190 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Joseph J. Sumakeris ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Carrier Lifetime ◽  
Drift Region ◽  
Gate Bias ◽  
Enhancement Layer ◽  
Channel Mobility ◽  
Dc Characteristics ◽  
Blocking Voltage ◽  
High Carrier ◽  
P Type ◽  
First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

Dose-window dependence on Si crystal orientation in separation by implanted oxygen substrate formation

2004 ◽  
Vol 19 (12) ◽  
pp. 3607-3613 ◽  
Author(s):  
H. Iikawa ◽  
M. Nakao ◽  
K. Izumi
Keyword(s):  
Experimental Data ◽  
Numerical Analysis ◽  
Crystal Orientation ◽  
Oxygen Ion ◽  
The Difference ◽  
First Time ◽  
Good Agreement

Separation by implemented oxygen (SIMOX)(111) substrates have been formed by oxygen-ion (16O+) implantation into Si(111), showing that a so-called “dose-window” at 16O+-implantation into Si differs from Si(100) to Si(111). In SIMOX(100), an oxygen dose of 4 × 1017/cm2 into Si(100) is widely recognized as the dose-window when the acceleration energy is 180 keV. For the first time, our work shows that an oxygen dose of 5 × 1017/cm2 into Si(111) is the dose-window for the formation of SIMOX(111) substrates when the acceleration energy is 180 keV. The difference between dose-windows is caused by anisotropy of the crystal orientation during growth of the faceted buried SiO2. We also numerically analyzed the data at different oxidation velocities for each facet of the polyhedral SiO2 islands. Numerical analysis results show good agreement with the experimental data.

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