Diffusion of A Deposited GeSe Film in GaAs using Ion-Beam Mixing

1985 ◽  
Vol 45 ◽  
Author(s):  
N. J. Kepler ◽  
N. W. Cheung
Keyword(s):  
Integrated Circuits ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Threshold Temperature ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
Heavily Doped ◽  
And Diffusion

ABSTRACTIon-beam mixing and rapid thermal annealing (RTA) techniques are used to form shallow and heavily-doped n+ layers in undoped GaAs. RTA reduces surface degradation and improves crystalline quality compared to lengthy thermal cycles, although furnace annealing producesidentical electrical characteristics. Ion-beam mixing has only a small effect on the diffusion of a deposited GeSe film, because the damage created by implantation is repaired during RTA before significant diffusion occurs. We define a threshold temperature representing the onset of significant electrical activation and/or diffusion, and propose a model relating the annealing, activation, and diffusion temperatures for the GeSe/GaAs system. RBS. SIMS, and electrical measurements show that extremely shallow layers with a sheet resistivity as low as 1480/El can be formed in GaAs by diffusion from a GeSe source. This technique has potential application to the formation of shallow ohmic contacts for GaAs integrated circuits.

Formation of GaAs Ohmic Contacts by Using Ion Beam Mixing

1985 ◽  
Vol 54 ◽  
Author(s):  
S. Furukawa ◽  
T. Asano ◽  
T. Fukada ◽  
H. Ishiwara ◽  
K. Tsutsui
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
High Dose ◽  
Doped Semiconductors ◽  
Ion Beam Mixing ◽  
Mixing Effects ◽  
Annealing Step ◽  
Short Period ◽  
Constant Dose ◽  
Pt Films

ABSTRACTIon beam mixing effects on metals and highly doped semiconductors on GaAs for formation of ohmic contacts have been studied. In this study, we have principally selected Pt as metal and Ge as semiconductors electrodes for GaAs. In Pt/GaAs system, we observed alloying phenomena induced by Si+, Ar+, Ge+ ion mixing effects. The amount of GaAs reacted with Pt was found to be proportional to the mass of the incident ions for constant dose. Concernig with the formation of ohmic contacts, only in the case of Si implantation through Pt films, the conversion from Schottky- to ohmic-contact was observed due to ion beam mixing effects. In Ge/GaAs system, we observad the solid state epitaxy for implanted Ge layer by the first annealing at 450°C in the two step annealing, but no activation of the implanted species. For activating implanted species, the second annealing at 800°C was effective. Concerning with the formation of ohmic contacts, we observed that the ohmic I-V characteristics for Ge/GaAs system could be obtainable when the following conditions were satisfied at the same time: 1) high dose implantation of As+ into Ge layer, 2) low dose implantation of Si into Ge/GaAs boundary and 3) relatively short period annealing in the second annealing step. From such study, it is concluded that ion beam mixing in conjunction with rapid annealing would be most promising for forming stable and reproducible ohmic contacts.

Structural, Optical and Electrical Characteristics of Silicon Carbon Nitride

1999 ◽  
Vol 592 ◽  
Author(s):  
L. C. Chen ◽  
C. T. Wu ◽  
C.-Y Wen ◽  
J.-J. Wu ◽  
W. T. Liu ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Ion Beam ◽  
Interface Roughness ◽  
Electrical Characteristics ◽  
Ion Beam Sputtering ◽  
Electrical Measurements ◽  
Sputtering Deposition ◽  
Silicon Carbon ◽  
Beam Sputtering ◽  
Silicon Carbon Nitride

ABSTRACTDielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.

Doping properties of the Ion-Beam-Sputtered SiGe Film

1996 ◽  
Vol 441 ◽  
Author(s):  
Wen-Jie Qi ◽  
Zhi-Sheng Wang ◽  
Zhi-Guang Gu ◽  
Guo-Ping Ru ◽  
Guo-Bao Jialig ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Polycrystalline Structure ◽  
X Ray ◽  
Post Annealing ◽  
And Diffusion

AbstractThe ion-beam-sputtered polycrystalline SiGe film and its doping properties have been studied. Boron and phosphorus have been doped into the sputtered poly-SiGe film by ion implantation and diffusion. To activate the implanted impurities, both rapid thermal annealing and fiirnace annealing have been used. The electrical measurements show that boron and plhosphorus can be doped into sputtered SiGe films and effectively activated by both ion implantation with post-annealing and diffiision. Hall mobilities as high as 31 cm2/V-s and 20 cm2/V.s have been obtained in B-difflhsed and P-diffused SiGe films, respectively. The x-ray diffraction spectra of the sputtered Sifie filhn show its typical polycrystalline structure with (111), (220) and (311) as the preferential orientations.

Formation of ohmic contacts to n-GaAs by ion beam mixing and annealing

1988 ◽  
Vol 31 (4) ◽  
pp. 437-444 ◽  
Author(s):  
W.O. Barnard ◽  
J.B. Malherbe ◽  
B.M. Lacquet
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Ion Beam Mixing

scholarly journals Mixing of Al Into Uranium Silicides Reactor Fuels

1996 ◽  
Vol 439 ◽  
Author(s):  
Fu-Rong Ding ◽  
R. C. Birtcher ◽  
B. J. Kestel ◽  
P. M. Baldo
Keyword(s):  
Ion Beam ◽  
High Dose ◽  
Ion Beam Mixing ◽  
Dose Irradiation ◽  
Fuel Burn ◽  
Fission Gas ◽  
Mixing Rates ◽  
Radiation Induced ◽  
And Diffusion ◽  
Swelling Behaviors

AbstractSEM observations have shown that irradiation induced interaction of the aluminum cladding with uranium silicide reactor fuels strongly affects both fission gas and fuel swelling behaviors during fuel burn-up. We have used ion beam mixing, by 1.5 MeV Kr, to study this phenomena. RBS and the 27 A1( p, γ) 28 Si resonance nuclear reaction to was used to measure radiation induced mixing of Al into U3Si and U3Si2 after irradiation at 300γ;C.Initially U mixes into the Al layer and Al mixes into the U3 Si. At a low doses, the Al layer is converted into Ual4 type compound while near the interface the phase U(Al93 Si. 07 )3 grows. Under irradiation, Al diffuses out of the Ual4 surface layer, and the lower density ternary, which is stable under irradiation, is the final product. Al mixing into U3 Si2 is slower than in U3 Si, but after high dose irradiation the Al concentration extends much father into the bulk. In both systems Al mixing and diffusion is controlled by phase formation and growth. The Al mixing rates into the two alloys are similar to that of Al into pure uranium where similar aluminide phases are formed.

Smooth Silicide Formation by Ion Beam Mixing of Ti/Si-Layers

1986 ◽  
Vol 74 ◽  
Author(s):  
K. Kohlhof ◽  
S. Mantl ◽  
B. Stritzker
Keyword(s):  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Silicide Formation ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
X Ray ◽  
Surfaces And Interfaces ◽  
Conventional Furnace ◽  
Conventional Furnace Annealing ◽  
Substrate Temperatures

AbstractIon beam mixing experiments of Ti-Si layers have been performed with Kr ions of 250 keV energy and doses ranging from 7 1015 to 7 1016 cm-2 at temperatures between liquid nitrogen temperature and 450°C. At substrate temperatures below 120°C no silicide formation could be detected. Only weak mixing at the Ti-Si interface is observed. At temperatures above 120°C the formation of TiSi2 could be verified by Rutherford backscattering and X-ray diffractometry. Layers of TiSi2 produced by ion beam mixing show smooth surfaces in contrast to those prepared by conventional furnace annealing. Those display rough surfaces and interfaces.

SIMS investigations of titanium profiles in LiNbO3 produced by ion beam mixing and diffusion

1989 ◽  
Vol 333 (4-5) ◽  
pp. 485-487 ◽  
Author(s):  
T. Bremer ◽  
D. Kollewe ◽  
H. Koschmieder ◽  
W. Heiland
Keyword(s):  
Ion Beam ◽  
Ion Beam Mixing ◽  
And Diffusion

Reliability of Ohmic Contacts for AlGaAs/GaAs HBTs

1990 ◽  
Vol 184 ◽  
Author(s):  
G. S. Jackson ◽  
E. Tong ◽  
P. Saledas ◽  
T. E. Kazior ◽  
R. Sprague ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Sintering Process ◽  
Electrical Stability ◽  
Long Term Stability ◽  
Heavily Doped ◽  
P Type

ABSTRACTThe reliability of ohmic contacts to thin, heavily doped layers of GaAs is investigated. Pd/Ge/Au contacts to n-type GaAs display excellent electrical stability over extended periods of thermal stress. The contact resistance stays below 0.50Ω-mim during a 2500h, 280°C bake. Reactive ion beam assisted evaporation of Ti with N forms TiN which is introduced as a barrier layer in Pt/TiN/Ti/Au contacts to a thin p+ layer. The TiN layer allows greater process latitude in the sintering process and improves long term stability of the ohmic contact. The microstructure of the p-type contacts is examined with TEM and Auger profiling at different instances of the 2500h, 280°C bake and compared to the contact resistance measurements.

The Effects of Ion Beam Mixing on Rapid Thermal Annealed Ohmic Contacts to N-GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
Seemi Kazmi ◽  
Roman V. Kruzelecky ◽  
David A. Thompson
Keyword(s):  
Surface Morphology ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Specific Contact Resistance ◽  
Ion Beam Mixing ◽  
Specific Contact

ABSTRACTNi/Ge/Au and Ni/Ge/Pd contacts have been made on 1018 cm-3 n-type GaAs. The contacts were subjected to ion beam mixing through the metallization using 70-130 keV Se+ ions and subsequently subjected to rapid thermal annealing (RTA). These are compared with unimplanted contacts produced by RTA techniques on the same substrate. The specific contact resistance ,pc, has been measured for the two systems. In addition, the contacts have been studied using Auger depth profiling and SEM studies have been used to determine surface morphology. Values of pc ∽ 10-6 -10-7 ohm-cm2 have been measured. It is observed that ion beam mixing or the addition of a Ti overlayer (to the Ni/Ge/Au) improves the contact morphology.

Structure and Properties of W and Mo-Subcontact Layers Influenced by Thermal Annealing

1995 ◽  
Vol 403 ◽  
Author(s):  
K. A. Gesheva ◽  
G. Stoyanov ◽  
A. Harizanova ◽  
R. Stefanov
Keyword(s):  
Ohmic Contacts ◽  
Temperature Stability ◽  
Electrochemical Treatment ◽  
Electrical Characteristics ◽  
High Temperature Stability ◽  
Transitional Layer ◽  
Solar Cell Performance ◽  
Heavily Doped ◽  
High Work ◽  
Proper Balance

AbstractOne of the most important problems to solve in order to improve the CdTe solar cell performance is the deposition of stable ohmic contacts. W and Mo with their high work function, high temperature stability and good mechanical properties are prospective materials for contacts to p-CdTe. This paper presents data for the electrophysical characteristics of W or Mo/CdTe and W or Mo/ CdS-CdTe heterostructure systems. W and Mo films are deposited by a W(CO)6 based CVD process at atmospheric pressure and low temperatures (250–300)°C. We emphasize the improvment of the contact properties by developing a transitional layer heavily doped with acceptors. The defects arrangement in the layer should promote the diffusion of such impurities as Cu, P, As etc. A proper balance between the impurities and the defects could be achieved by suitable thermal treatment. Rapid thermal or traditional annealing in different gas atmospheres – N2, Ar or air were applied, followed by chemical or electrochemical treatment. Electrical characteristics measurements and structural studies were performed for CdTe layers as well as for the SnO2 - CdS - CdTe structures

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