Some Recent Developments in Industrial Ion Implanters

1985 ◽  
Vol 45 ◽  
Author(s):  
Geoff Ryding
Keyword(s):  
Silicon On Insulator ◽  
High Current ◽  
Oxide Layers ◽  
Semiconductor Doping ◽  
Buried Oxide ◽  
Recent Developments ◽  
Silicon On Insulator Technology ◽  
Implanted Devices ◽  
Ion Implanted

ABSTRACTsemiconductor doping. This paper surveys some of the equipment developed at Eaton Corporation in response to the proliferation of ion implanted devices. Developments in both high current (~10mA) and medium current (~1mA) implanters will be discussed.The evolution of dedicated equipment for the production of buried oxide layers (silicon on insulator technology) will also be reviewed.

A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology

2016 ◽  
Vol 117 ◽  
pp. 100-116 ◽  
Author(s):  
Pierre Morin ◽  
Sylvain Maitrejean ◽  
Frederic Allibert ◽  
Emmanuel Augendre ◽  
Qing Liu ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Thin Body ◽  
Fully Depleted ◽  
Buried Oxide ◽  
Silicon On Insulator Technology

ChemInform Abstract: Growth of Buried Oxide Layers of Silicon-on-Insulator (SOI) Structures by Thermal Oxidation of the Top Silicon Layer.

ChemInform ◽  
2010 ◽  
Vol 28 (43) ◽  
pp. no-no
Author(s):  
E. SCHROER ◽  
S. HOPFE ◽  
Q. Y. TONG ◽  
U. GOESELE ◽  
W. SKORUPA
Keyword(s):  
Thermal Oxidation ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Oxide Layers ◽  
Buried Oxide

Growth of Buried Oxide Layers of Silicon‐on‐Insulator Structures by Thermal Oxidation of the Top Silicon Layer

1997 ◽  
Vol 144 (6) ◽  
pp. 2205-2210 ◽  
Author(s):  
E. Schroer ◽  
S. Hopfe ◽  
Q. Y. Tong ◽  
U. Gösele ◽  
W. Skorupa
Keyword(s):  
Thermal Oxidation ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Oxide Layers ◽  
Buried Oxide

Microstructural Characterization of High Dose Oxygen Implanted Silicon

1986 ◽  
Vol 74 ◽  
Author(s):  
J. L. Batstone ◽  
Alice E. White ◽  
K. T. Short ◽  
J. M. Gibson ◽  
D. C. Jacobson
Keyword(s):  
Microstructural Characterization ◽  
Amorphous Structure ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Resolution Imaging ◽  
Buried Oxide ◽  
Transmission Electron ◽  
Resolution Imaging ◽  
Silicon On Insulator Technology

AbstractThe microstructure of oxygen implanted silicon for use in silicon-on- insulator technology has been examined by transmission electron microscopy. A variety of buried oxide layers prepared using oxygen doses below and above that required for stoichiometric SiO2 formation have been studied. High resolution imaging in crosssection has revealed exceptionally flat Si-SiO2 interfaces, comparable to the best thermally grown Si-SiO2 interfaces. Examination of as-implanted material shows a complex interwoven crystalline/amorphous structure which evolves during high temperature (1350–1400° C) annealing into a buried oxide layer.

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator

2017 ◽  
Vol 56 (10) ◽  
pp. 105503
Author(s):  
Kiichi Furukawa ◽  
Akinobu Teramoto ◽  
Rihito Kuroda ◽  
Tomoyuki Suwa ◽  
Keiichi Hashimoto ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Flat Surface ◽  
Silicon On Insulator ◽  
Thin Silicon ◽  
Ion Implanted
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