The Profile Design of Strained Sige-Channel P-Type Modulation Doped Fet

1996 ◽  
Vol 450 ◽  
Author(s):  
Klaus Y.J. Hsu ◽  
S. M. Huang
Keyword(s):  
High Speed ◽  
Peak Position ◽  
Superior Performance ◽  
Device Performance ◽  
Large Signal ◽  
Strained Si ◽  
Potential Wells ◽  
Channel Layer ◽  
P Type ◽  
Strained Sige

ABSTRACTTo improve the performance of p-type SiGe-channel FEPs is important for Si-based high-speed/high-frequency applications. This work discusses the design of germamium profiles in the strained Si1−xGex channel region of p-type SiGe modulation doped FET's and studies its effect on device performance. Two-dimensional device simulator is used to simulate the large-signal device performance for various Ge distributions including triangular, trapezoidal, and flat profiles. In particular, the thickness of the strained SiGe channel layer is 15 nm and a 5 ran thick Si cap layer is on top of the channel. It is found that with the same integrated Ge content in the strained channel, graded Ge profiles lead to higher transconductances and larger threshold voltage windows than those of flat profiles, due to deeper potential wells and better carrier confinement ability. For triangularly graded profiles, the peak position must be located in the upper half portion of the channel layer to result in superior performance. By adding more Ge to extend the peak region, triangular profiles become trapezoidal ones. However, more Ge content does not necessarily produce better performance. If the well depth of trapezoidal profile is the same as that of triangular profile and if the trapezoid plateau begins at the same position as that of triangle peak, the device performance is almost the same for both profiles.

Hg1−x−yMnxCdyTe Alloys for 1.3−1.8 μm Photodiode Applications

1986 ◽  
Vol 89 ◽  
Author(s):  
S. H. Shin ◽  
J. G. Pasko ◽  
D. S. Lo ◽  
W. E. Tennant ◽  
J. R. Anderson ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Room Temperature ◽  
Reverse Bias ◽  
Fiber Optic ◽  
Superior Performance ◽  
Device Performance ◽  
Device Structure ◽  
Cdte Substrate ◽  
P Type

AbstractHgMnCdTe/CdTe photodiodes with responsivity cutoffs of up to 1.54 pm have been fabricated by liquid phase epitaxy (LPE). The mesa device structure consists of a boron-implanted mosaic fabricated on a p-type Hg1−x−yMnxCdyTe layer grown on a CdTe substrate. A reverse breakdown voltage (VB) of 50 V and a leakage current density of 1.5 × 10−4 A/cm2 at V = −10 V was measured at room temperature (295K). A 0.75 pF capacitance was also measured under a 5 V reverse bias at room temperature. This device performance based on the quaternary HgMnCdTe shows both theoretical and practical promise of superior performance for wavelengths in the range 1.3 to 1.8 μm for fiber optic applications.

Analytical Threshold Voltage Models for Strained Si/Strained Si1-xGex/Relaxd Si1-yGey PMOSFET

2011 ◽  
Vol 110-116 ◽  
pp. 5447-5451
Author(s):  
Shan Shan Qin ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Xiao Yan Wang ◽  
Guan Yu Wang
Keyword(s):  
Threshold Voltage ◽  
Hole Mobility ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
Dual Channel ◽  
Buried Channel ◽  
Strong Inversion ◽  
Effect Transistor ◽  
P Type ◽  
Strained Sige

Threshold voltage models for both buried channel and surface channel for the dual-channel strained Si/strained Si1-xGex/relaxd Si1-yGey(s-Si/s-SiGe/Si1-yGey) p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) are presented in this paper. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel (compressive strained SiGe) than in the surface channel, because the hole mobility in the buried channel is higher than that the surface channel. They offer a good accuracy as compared with the results of device simulator ISE.

P-type SiGe/Si Superlattice Cooler

2000 ◽  
Vol 626 ◽  
Author(s):  
Xiaofeng Fan ◽  
Gehong Zeng ◽  
Edward Croke ◽  
Gerry Robinson ◽  
Chris LaBounty ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermionic Emission ◽  
Single Element ◽  
Device Performance ◽  
Hot Carriers ◽  
Strained Si ◽  
Fabrication And Characterization ◽  
Superlattice Structures ◽  
P Type

ABSTRACTThe fabrication and characterization of single element p-type SiGe/Si superlattice coolers are described. Superlattice structures were used to enhance the device performance by reducing the thermal conductivity between the hot and the cold junctions, and by providing selective emission of hot carriers through thermionic emission. The structure of the samples consisted of a 3 μm thick symmetrically strained Si0.7Ge0.3/Si superlattice grown on a buffer layer designed so that the in-plane lattice constant is approximately that of relaxed Si0.9Ge0.1. Cooling up to 2.7 K at 25 °C and 7.2 K at 150 °C were measured. These p-type coolers can be combined with n-type devices that were demonstrated in our previous work. This is similar to conventional multi element thermoelectric devices, and it will enable us to achieve large cooling capacities with relatively small currents.

Measurement of the residual macro and microstrain in strained Si/SiGe using Raman spectroscopy

2004 ◽  
Vol 809 ◽  
Author(s):  
P. Dobrosz ◽  
S.J. Bull ◽  
S.H. Olsen ◽  
A.G. O'Neill
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Germanium ◽  
Peak Shift ◽  
Peak Position ◽  
Laser Raman Spectroscopy ◽  
Strained Silicon ◽  
Device Performance ◽  
Extended Defects ◽  
Strained Si ◽  
Laser Raman

ABSTRACTThe use of laser Raman spectroscopy to assess the residual strain in strained silicon/silicon germanium devices is well established. The peak shift associated with the 520cm−1 silicon peak can be used to directly measure the strain in the cap layer provided that the strained silicon peak can be deconvoluted from the more intense Si in SiGe peak which occurs at slightly lower wavenumbers. However, though peak position gives a measure of the macrostrains in the layer it is not useful for the assessment of microstrains associated with point defects which may also influence device performance; such microstrains influence the intensity of the Raman peaks and can, in principle, be monitored by this method. In this study we have undertaken a study of peak shape as a function of processing conditions for strained silicon on SiGe. Changes in peak position may be correlated with macrostrains and macrostrain relaxation around extended defects such as dislocations. Changes in peak width can be correlated with processes which lead to changes in composition (e.g. germanium build-up in the surface after etching) and microstrain. Such changes are not necessarily correlated with changes in macrostrain but indicate that microstrain could also be an important factor influencing device performance.

scholarly journals NaI Doping Effect on Photophysical Properties of Organic-Lead-Halide Perovskite Thin Films by Using Solution Process

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Chuangchuang Chang ◽  
Xiaoping Zou ◽  
Jin Cheng ◽  
Ying Yang ◽  
Yujun Yao ◽  
...  
Keyword(s):  
Photophysical Properties ◽  
Perovskite Solar Cells ◽  
Solution Process ◽  
Precursor Solution ◽  
Critical Issue ◽  
Peak Position ◽  
Semiconductor Film ◽  
Device Performance ◽  
Perovskite Layer ◽  
Organic Lead

Perovskite solar cells (PSCs) have been developed rapidly in recent years. How to modify the photophysical properties of perovskite films has become the critical issue, affecting device performance. In this paper, NaI doping into the perovskite layer is attempted to modulate the photophysical properties to improve the performance of PSCs. The perovskite layer was prepared by using the one-step solution spin coating method with doping different concentrations of NaI into the perovskite precursor solution and chlorobenzene employed as the antisolvent. Experimental results show that the absorption band edge and the peak position of the PL spectrum of the doped perovskite thin film were red shifted; thus, the band gap of the semiconductor film became narrow. Doping NaI into perovskite is an effective way, by which the photophysical properties of perovskite films are well modified, thus improving device performance.

Removing W Polymer Residue from BEOL Structures Using DSP+ (Dilute Sulfuric-Peroxide-HF) Mixture – A Case Study

2012 ◽  
Vol 195 ◽  
pp. 128-131 ◽  
Author(s):  
Hun Hee Lee ◽  
Min Sang Yun ◽  
Hyun Wook Lee ◽  
Jin Goo Park
Keyword(s):  
High Speed ◽  
Semiconductor Device ◽  
Environmental Issues ◽  
Low Power Consumption ◽  
Device Performance ◽  
Metal Gate ◽  
Feature Size ◽  
High K ◽  
Removal Of Metal

As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP+(dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP+chemicals for cleaning processes also increases [.

Global Nonlinear Modelling of Gas Turbine Dynamics Using NARMAX Structures

2001 ◽  
Author(s):  
Neophytos Chiras ◽  
Ceri Evans ◽  
David Rees
Keyword(s):  
Gas Turbine ◽  
Nonlinear Model ◽  
Linear Models ◽  
Search Space ◽  
Frequency Domain Analysis ◽  
Superior Performance ◽  
Large Signal ◽  
Nonlinear Modelling ◽  
Frequency Domains ◽  
Identification Techniques

This paper examines the estimation of a global nonlinear gas turbine model using NARMAX techniques. Linear models estimated on small-signal data are first examined and the need for a global nonlinear model is established. A nonparametric analysis of the engine nonlinearity is then performed in the time and frequency domains. The information obtained from the linear modelling and nonlinear analysis is used to restrict the search space for nonlinear modelling. The nonlinear model is then validated using large-signal data and its superior performance illustrated by comparison with a linear model. This paper illustrates how periodic test signals, frequency domain analysis and identification techniques, and time-domain NARMAX modelling can be effectively combined to enhance the modelling of an aircraft gas turbine.

High speed and highly efficient Si optical modulator with strained SiGe layer

2015 ◽  
Author(s):  
Junichi Fujikata ◽  
Masataka Noguchi ◽  
Younghyun Kim ◽  
Shigeki Takahashi ◽  
Takahiro Nakamura ◽  
...  
Keyword(s):  
High Speed ◽  
Sige Layer ◽  
Optical Modulator ◽  
Highly Efficient ◽  
Strained Sige
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