Visible Photoluminescence From Si Ion-Implanted and Thermally Annealed SiO2 Films

1996 ◽  
Vol 452 ◽  
Author(s):  
Y. Kanemitsu ◽  
N. Shimizu ◽  
S. Okamoto ◽  
T. Komoda ◽  
P. L. F. Hemment ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Strong Coupling ◽  
Spectral Region ◽  
Room Temperature ◽  
Visible Spectral Region ◽  
Sio2 Films ◽  
Vibrational Excitations ◽  
Stretching Vibrations ◽  
Luminescent Spectra ◽  
Glassy Matrices

AbstractWe have experimentally studied the photoluminescence (PL) properties of Si clusters in SiO2 glassy matrices. Si clusters in the SiO2 matrices were fabricated by Si+ ion implantation into SiO2 glasses and then thermally annealed in forming gas. Broad PL peaks are observed in the visible spectral region at room temperature. Resonantly excited PL spectra indicate that the strong coupling of excitons and stretching vibrations of the Si-0 bonds causes the broad luminescent spectra. It is concluded that the interaction between electronic and vibrational excitations controls the luminescent emission and the observed dynamics.

scholarly journals Modification of diazoquinone-novolac photoresist films by boron ion implantation

2020 ◽  
pp. 62-69
Author(s):  
Dmitrii I. Brinkevich ◽  
Uladislau S. Prasalovich ◽  
Yury N. Yankouski
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Ion Beam ◽  
Plane Deformation ◽  
Dose Range ◽  
Current Mode ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Positive Photoresist ◽  
Stretching Vibrations

Diazoquinone-novolac photoresist films implanted with B+ ions were studied by the method of attenuated total reflection (ATR). Films of positive photoresist FP9120 with a thickness h of 1.0 and 2.5 mm were deposited by centrifuging on p-type silicon plates with (111) orientation. Implantation with 60 keV B+ions in the dose range of 1015–1016 cm–2 in the constant ion current mode (current density 4 mA/cm2 ) was carried out at room temperature in a residual vacuum not worse than 10–5 Pa using the «Vesuvius-6» ion beam accelerator. The attenuated total reflection spectra were recorded in the range 400 – 4000 cm–1 by ALPHA spectrophotometer (Bruker Optik GmbH, Germany) at room temperature. It was shown that ion implantation leads to intensive transformation of the photoresist beyond the range of ions, which is characterized by the appearance in the spectrum of intense bands with peaks at 2151 and 2115 cm–1, due to stretching vibrations of double cumulative bonds, in particular С——С——О. In the implanted samples, a shift to the low-energy region of the maxima of the stretching vibrations of C—H bonds, plane deformation vibrations of O—H bonds and pulsating vibrations of the carbon skeleton of aromatic rings as well as the redistribution of intensities between closely spaced maxima, were observed.

Strong Coupling: Polariton Bose Condensation

2017 ◽  
Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy
Keyword(s):  
Strong Coupling ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Dissipative System ◽  
Bose Condensation ◽  
Einstein Condensation ◽  
Strong Coupling Regime ◽  
Stimulated Scattering ◽  
Exciton Polaritons ◽  
Bose Einstein

In this Chapter we address the physics of Bose-Einstein condensation and its implications to a driven-dissipative system such as the polariton laser. We discuss the dynamics of exciton-polaritons non-resonantly pumped within a microcavity in the strong coupling regime. It is shown how the stimulated scattering of exciton-polaritons leads to formation of bosonic condensates that may be stable at elevated temperatures, including room temperature.

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

Doping of GaN by ion implantation

2000 ◽  
Vol 650 ◽  
Author(s):  
Eduardo J. Alves ◽  
C. Liu ◽  
Maria F. da Silva ◽  
José C. Soares ◽  
Rosário Correia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Room Temperature ◽  
Lattice Site ◽  
Helium Temperature ◽  
Site Location ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Er Doped ◽  
Ion Implanted

ABSTRACTIn this work we report the structural and optical properties of ion implanted GaN. Potential acceptors such as Ca and Er were used as dopants. Ion implantation was carried out with the substrate at room temperature and 550 °C, respectively. The lattice site location of the dopants was studied by Rutherford backscattering/channeling combined with particle induced X-ray emission. Angular scans along both [0001] and [1011] directions show that 50% of the Er ions implanted at 550 oC occupy substitutional or near substitutional Ga sites after annealing. For Ca we found only a fraction of 30% located in displaced Ga sites along the [0001] direction. The optical properties of the ion implanted GaN films have been studied by photoluminescence measurements. Er- related luminescence near 1.54 μm is observed under below band gap excitation at liquid helium temperature. The spectra of the annealed samples consist of multiline structures with the sharpest lines found in GaN until now. The green and red emissions were also observed in the Er doped samples after annealing.

Collision-induced emission of singlet oxygen in the visible spectral region at temperatures of 90–315 K

2014 ◽  
Vol 116 (4) ◽  
pp. 542-547 ◽  
Author(s):  
M. V. Zagidullin ◽  
M. I. Svistun ◽  
N. A. Khvatov ◽  
A. S. Insapov
Keyword(s):  
Singlet Oxygen ◽  
Spectral Region ◽  
Visible Spectral Region

Excitonic Bands in the Optical Absorption Spectra of A3MX6 and A3M2X9 (A = MeNH3, Me2NH2, Me3NH, Me4N; M = Bi, Sb; X = Cl, Br, I)

1994 ◽  
Vol 49 (6) ◽  
pp. 849-851 ◽  
Author(s):  
G. C. Papavassiliou ◽  
I. B. Koutselas
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Spectral Region ◽  
Visible Spectral Region ◽  
Optical Absorption Spectra ◽  
Absorption Bands ◽  
Uv Visible ◽  
Low Dimensional

The title compounds (natural low-dimensional semiconductors) show strong excitonic optical absorption bands in the UV-visible spectral region, because of the dielectric confinement of excitons. as in the cases of other similar systems based on PbX2-4, SnX2-4. PtI - X - PtIV-X , Cdx,Sy-clusters etc

scholarly journals Tailoring the Photophysical Signatures of BODIPY Dyes: Toward Fluorescence Standards across the Visible Spectral Region

2018 ◽  
Author(s):  
Rebeca Sola Llano ◽  
Edurne Avellanal Zaballa ◽  
Jorge Bañuelos ◽  
César Fernando Azael Gómez Durán ◽  
José Luis Belmonte Vázquez ◽  
...  
Keyword(s):  
Spectral Region ◽  
Visible Spectral Region
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