scholarly journals Modification of diazoquinone-novolac photoresist films by boron ion implantation

2020 ◽  
pp. 62-69
Author(s):  
Dmitrii I. Brinkevich ◽  
Uladislau S. Prasalovich ◽  
Yury N. Yankouski
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Ion Beam ◽  
Plane Deformation ◽  
Dose Range ◽  
Current Mode ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Positive Photoresist ◽  
Stretching Vibrations

Diazoquinone-novolac photoresist films implanted with B+ ions were studied by the method of attenuated total reflection (ATR). Films of positive photoresist FP9120 with a thickness h of 1.0 and 2.5 mm were deposited by centrifuging on p-type silicon plates with (111) orientation. Implantation with 60 keV B+ions in the dose range of 1015–1016 cm–2 in the constant ion current mode (current density 4 mA/cm2 ) was carried out at room temperature in a residual vacuum not worse than 10–5 Pa using the «Vesuvius-6» ion beam accelerator. The attenuated total reflection spectra were recorded in the range 400 – 4000 cm–1 by ALPHA spectrophotometer (Bruker Optik GmbH, Germany) at room temperature. It was shown that ion implantation leads to intensive transformation of the photoresist beyond the range of ions, which is characterized by the appearance in the spectrum of intense bands with peaks at 2151 and 2115 cm–1, due to stretching vibrations of double cumulative bonds, in particular С——С——О. In the implanted samples, a shift to the low-energy region of the maxima of the stretching vibrations of C—H bonds, plane deformation vibrations of O—H bonds and pulsating vibrations of the carbon skeleton of aromatic rings as well as the redistribution of intensities between closely spaced maxima, were observed.

Physicochemical Characteristics of an Ultra-Thin Hydrophobic Trichlorosilanes Using SiO2 as Adhesion

2019 ◽  
Vol 796 ◽  
pp. 80-87
Author(s):  
Akinsanya Damilare Baruwa ◽  
Esther Titilayo Akinlabi ◽  
Oluseyi Philip Oladijo ◽  
Stephen Akinwale Akinlabi ◽  
Jeff Chinn
Keyword(s):  
Room Temperature ◽  
Electrochemical Impedance ◽  
Physicochemical Characteristics ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Natural Seawater ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hydrophobic Silane ◽  
Better Than

The aim of the research is to subject the three different silanes to chemical and electrochemical investigations in other to determine the most efficient organic compound. Three types of hydrophobic silanes [Tris (Trimethylsiloxy) silyethyl] dimethylchlorosilane (Alkyl); Tridecafloro-1,1,2,2-tetrahydrooctyltrichlorosilane (FOTS) and Henicosyl-1,1,2,2-tetrahydrododecyltricholrosilane (FDDTS) are presented and investigated. The three silanes are of different composition but are deposited at the same parameters and conditions. The chemical investigation was studied through (attenuated total reflection Fourier-transform infrared (ATR-FTIR) and x-ray diffraction (XRD), while the electrochemical study was conducted through EIS using natural seawater electrolyte at room temperature. From the investigation techniques, only electrochemical impedance results show that FDDTS performed better than both Alkyl and FOTS. The chemical analysis showed the presence of hydrophobic silane on all the coated samples, and no distinction can be drawn from associated peaks.

Visible Photoluminescence From Si Ion-Implanted and Thermally Annealed SiO2 Films

1996 ◽  
Vol 452 ◽  
Author(s):  
Y. Kanemitsu ◽  
N. Shimizu ◽  
S. Okamoto ◽  
T. Komoda ◽  
P. L. F. Hemment ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Strong Coupling ◽  
Spectral Region ◽  
Room Temperature ◽  
Visible Spectral Region ◽  
Sio2 Films ◽  
Vibrational Excitations ◽  
Stretching Vibrations ◽  
Luminescent Spectra ◽  
Glassy Matrices

AbstractWe have experimentally studied the photoluminescence (PL) properties of Si clusters in SiO2 glassy matrices. Si clusters in the SiO2 matrices were fabricated by Si+ ion implantation into SiO2 glasses and then thermally annealed in forming gas. Broad PL peaks are observed in the visible spectral region at room temperature. Resonantly excited PL spectra indicate that the strong coupling of excitons and stretching vibrations of the Si-0 bonds causes the broad luminescent spectra. It is concluded that the interaction between electronic and vibrational excitations controls the luminescent emission and the observed dynamics.

TEM examinations of ion implanted silicon using cross-section specimens

1978 ◽  
Vol 36 (1) ◽  
pp. 364-365
Author(s):  
J. Fletcher ◽  
G.R booker
Keyword(s):  
Ion Implantation ◽  
Cross Section ◽  
Room Temperature ◽  
Lower Layer ◽  
Dose Range ◽  
Inert Atmosphere ◽  
Free Zone ◽  
Basic Work ◽  
Ion Implanted

Basic work is being performed on the damage structures resulting from ion implantation of (111) Si slices. Specimens were implanted at room temperature with either 60keV Ne+ in the dose range 1 x 1014 to 5 x l015 cm-2, or 150keV As+ in the range 3 x 1014 to 7.5 x 1015 cm-2, and subsequently annealed in an inert atmosphere at temperatures up to 1000°C. These were thinned for 100kV TEM examination to give both ‘plan’ and ‘90° cross-section' specimens. Results are described for four different aspects of the work.First, Fig.l shows the damage for different Ne+ doses (800°C anneal). For 2.5 x 1014( cm-2, the damage consists of a band of loops and rods, with a defect-free zone close to the surface. For 1 x 1015 cm -2, there are two separate damage layers. The upper layer comprises mainly micro-twin lamellae, and the lower layer loops and rods similar to those in Fig.la.

Structure of Amorphous A12O3 Produced by Ion Implantation

1989 ◽  
Vol 157 ◽  
Author(s):  
C. J. Mchargue ◽  
P. S. Sklad ◽  
P. Angelini ◽  
C. W. White ◽  
J. C. Mccallum ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Short Range ◽  
Room Temperature ◽  
Short Range Order ◽  
Ion Beam ◽  
Amorphous State ◽  
Electronic Charge ◽  
Stoichiometric Ratio ◽  
Chemical Effects ◽  
Critical Composition

ABSTRACTThe amorphous state can be produced in α-Al2O3 by ion beam induced displacements at 77 K or by displacements combined with chemical effects at room temperature. Progress toward understanding the amorphization process has been made from studies of the short-range order, electronic charge on implanted species, and the critical composition for amorphization. Results are presented for implantation of Al + O in the stoichiometric ratio, zirconium, iron, and tin.

Formation of AlGaAs by ion beam mixing of Al films on GaAs

1990 ◽  
Vol 48 (4) ◽  
pp. 690-691
Author(s):  
R.S. Deol ◽  
E.A. Kamil ◽  
K.P. Homewood ◽  
T. Kobayashi
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Ion Beam ◽  
Chamber Pressure ◽  
Pure Aluminium ◽  
Material Synthesis ◽  
Ion Beam Mixing ◽  
Implantation Energy ◽  
Gaas Substrates ◽  
Heated Filament

There is considerable interest in the use of ion implantation for material synthesis. The synthesis of AlGaAs by dual implants of As+ and Al+ into GaAs followed by rapid thermal annealing (RTA) has been reported recently. In this paper results relating to the formation of AlxGa1-xAs by depositing thin Al films on GaAs substrates and irradiating with arsenic ions followed by RTA are presented.Aluminium layers of 580Å or 650Å in thickness were deposited onto liquid encapsulated Czochralski (LEC) grown samples of semi-insulating <100> GaAs. The deposition was done using pure aluminium on a heated filament at a chamber pressure of ∽10−6 Torr with the thickness being measured using a talystep. Subsquently As+ implants were performed at room temperature using an energy of 150, 200 or 300 keV and a dose of 3x1016 or 1x1017 cm−2. The implantation energy was selected to ensure that the projected depth exceeded the thickness of the Al overlayer employed.

The influence of nanostructure formation on properties for Cr implanted PET

2001 ◽  
Vol 665 ◽  
Author(s):  
Wu Yuguang ◽  
Zhang Tonghe ◽  
Zhang Huixing ◽  
Zhang Xiaoji ◽  
Cui Ping ◽  
...  
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Metal Ion ◽  
Ion Beam ◽  
Dose Range ◽  
Surface Hardness ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Ion Beam Modification ◽  
Ion Implanted

ABSTRACTPolyethylene terephthalate (PET) has been modified by Cr ion implantation with a dose range from 1×1016to 2×1017ions /cm2 using a metal vapor vacuum arc MEVVA source. The surface morphology was observed by atomic force microscopy (AFM). The Cr atom precipitation was found. The changes of the structure and composition have been observed with transmission electron microscope (TEM). The TEM photos revealed the presence of Cr nano-meter particles on the implanted PET. It is believed that the change would cause the improvement of the conductive properties and wear resistance. The electrical properties of PET have been improved after metal ion implantation. The resistivity of Cr ion implanted PET decreased obviously with an increase of ion dose. When the metal ion dose with 2×1017cm−2 was implanted into PET, the resistivity of PET could be less than 0.1 Ωm. But when Si or C ions with same dose are implanted PET, the resistivity of PET would be up to several Ωm. The result show that the resistivity of Cr ion implanted sample is obviously lower than that of Si- and C-implanted one. After Cr implantation, the surface hardness and modulus could be increased. The property of the implanted PET has modified greatly. The hardness and modulus of Cr implanted PET with dose of 2×1017/cm2 is 9.5 and 3.1 times greater than that of pristine PET. So we can see that wear resistance improved greatly. The Cr ion beam modification mechanism of PET will be discussed.

Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

1993 ◽  
Vol 320 ◽  
Author(s):  
J. Teichert ◽  
L. Bischoff ◽  
E. Hesse ◽  
D. Panknin ◽  
W. Skorupa
Keyword(s):  
Ion Implantation ◽  
Substrate Temperature ◽  
Liquid Alloy ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dose Dependence ◽  
Ion Sources ◽  
Cobalt Ions ◽  
Substrate Heating

ABSTRACTThe maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt sulicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.

Formation of CoSi2 Wires by Maskless Implantation with the Focused Ion Beam

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Teichert ◽  
L. Bischoff ◽  
E Hesse ◽  
D. Panknin ◽  
W. Skorupa
Keyword(s):  
Ion Implantation ◽  
Substrate Temperature ◽  
Liquid Alloy ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Dose Dependence ◽  
Ion Sources ◽  
Cobalt Ions ◽  
Substrate Heating

ABSTRACTThe maskless ion implantation with the focused ion beam as a new method for ion beam synthesis of cobalt suicide wires is presented. In order to perform the implantation a special achromatic mass separator was implemented into the ion column, liquid alloy ion sources for cobalt ions were developed and a substrate heating was built. Ion implantation was performed with 30 keV Co+ and 60 keV Co++ ions. The dose dependence for room temperature implantation and the influence of the substrate temperature were investigated.

scholarly journals Bulk Polaritons in K2Mg2(SO4)3 Observed by the ATR-Method

1985 ◽  
Vol 40 (9) ◽  
pp. 944-946
Author(s):  
M. Behmer
Keyword(s):  
Room Temperature ◽  
Total Reflection ◽  
Attenuated Total Reflection ◽  
Lattice Vibrations ◽  
Reflection Method

Abstract The bulk polariton modes originating from the lattice vibrations of the SO4- groups in K2Mg2(SO4)3 have been experimentally studied by means of the ATR (attenuated total reflection) method at room temperature. The comparison of the recorded ATR-spectra with the simulation of the ATR-spectra by an oscillator fit shows a satisfying agreement. An assignment of LO- and TO-frequencies based on the results of the oscillator fit is given.

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