Interface Study of Mo/GaAs

1985 ◽  
Vol 48 ◽  
Author(s):  
Peiching Ling ◽  
Jyh-Kao Chang ◽  
Min-Shyong Lin ◽  
Jen-Chung Lou
Keyword(s):  
Intermetallic Compounds ◽  
Electron Spectroscopy ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Diodes ◽  
Electron Beam Evaporation ◽  
Electrical Characteristics ◽  
Transmission Electron ◽  
Transient Spectroscopy ◽  
Interface Study

ABSTRACTThe electrical characteristics and the microstructure of Mo/GaAs Schottky diodes fabricated by electron-beam evaporation have been studied. The barrier height, ideality factor, deep trapping levels and intermetallic compounds of these annealed or unannealed Mo/GaAs Schottky diodes are obtained by using the I-V, C-V, Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) analyses. An obvious interdiffusion at Mo/GaAs interface is observed in Mo/GaAs Schottky diodes annealed above 500°C for 10 min. DLTS results show that there are two electron traps [Ec-(0.52±0.02)'eV and Ec-(0.86±0.02) eV] and one hole trap [Ev+(0.92±0.02) eV] are demonstrated for 300°C, 400°C post-annealed Mo/GaAs diodes. TEM results also indicate that the disappearance of these deep trapping levels may correlated to the formation of intermetallic compounds GaMo3 and MoAs2 existed in Mo/GaAs diodes post-annealed above 500°C. It is believed that the metal-semiconductor interdiffusion and the intermetallic compounds play the major roles for the thermal degradation of Mo/GaAs Schottky diodes.

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models

2019 ◽  
Vol 963 ◽  
pp. 718-721
Author(s):  
Pavel Hazdra ◽  
Stanislav Popelka
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Radiation Effects ◽  
Deep Level ◽  
Dose Range ◽  
Simulation Models ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Power Mosfets ◽  
Transient Spectroscopy ◽  
Good Agreement

Compact simulation models of two key silicon carbide power components, the Junction Barrier Schottky diode and the power MOSFET, which are taking into account the effect of irradiation by highenergy electrons, were developed. Two 1.7 kV class devices: the 14 A JBS diode C3D10170H and the 5 A SiC power MOSFETs C2M1000170D produced by Wolfspeed were irradiated by 4.5 MeV electrons in the dose range up to 2000 kGy. Electrical characteristics were measured prior to and after irradiation. Radiation defects were studied by deep level transient spectroscopy and the effect of irradiation on device characteristics was established. SPICE models taking into account the irradiation fluence were proposed and calibrated using the parameters extracted from experiment. Simulated characteristics show a very good agreement with reality.

Characterisation of the Subthreshold Damage in MeV Ion Implanted p Si

1998 ◽  
Vol 510 ◽  
Author(s):  
Shabih Fatima ◽  
Jennifer Wong-Leung ◽  
John Fitz Gerald ◽  
C. Jagadish
Keyword(s):  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Damage Evolution ◽  
Peak Concentration ◽  
Deep Level ◽  
Extended Defects ◽  
Transmission Electron ◽  
Transient Spectroscopy ◽  
P Type ◽  
Dlts Spectra

AbstractSubthreshold damage in p-type Si implanted and annealed at elevated temperature is characterized using deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). P-type Si is implanted with Si, Ge and Sn with energies in the range of 4 to 8.5 MeV, doses from 7 × 1012to 1×1014cm−2and all annealed at 800°C for 15 min. For each implanted specie, DLTS spectra show a transition dose called threshold dose above which point defects transform in to extended defects. DLTS measurements have shown for the doses below threshold, a sharp peak, corresponding to the signature of point defects and for doses above threshold a broad peak indicating the presence of extended defects. This is found to be consistent with TEM analyses where no defects are seen for the doses below threshold and the presence of extended defects for the doses above threshold. This suggests a defect transformation regime where point defects present below threshold are acting like nucleating sites for the extended defects. Also the mass dependence on the damage evolution has been observed, where rod-like defects are observed in the case of Si and (rod-like defects and loops) for Ge and Sn despite the fact that peak concentration of vacancies for Ge and Sn are normalized to the peak number of vacancies for Si.

Ion Beam Induced Structural and Electrical Modifications in Crystalline and Amorphous Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
S. Coffa ◽  
A. Battaglia ◽  
F. Priolo
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Ion Irradiation ◽  
Deep Level ◽  
Ion Beam ◽  
Defect Structures ◽  
Transmission Electron ◽  
Defect Accumulation ◽  
Amorphous Si ◽  
Transient Spectroscopy

ABSTRACTThe mechanisms of defect accumulation and dynamic annealing in ion-implanted crystalline and amorphous Si are elucidated by performing conductivity and Raman spec-trascopy measurements in-situ during ion irradiation. In amorphous Si the entire gamut of defect structures has been characterized by analyzing the annealing kinetics from 77 K to ~ 800 K both during and after irradiation. Moreover the modifications in the electronic properties of crystalline Si produced by ion-irradiation have been investigated. The use of in-situ techniques in combination with transmission electron microscopy and deep-level transient spectroscopy allowed us to demonstrate the correlation between structural and electrical defects produced by ion-irradiation in Si.

The Influence of Neutron Irradiation on Electrical Characteristics of 4H-SiC Power Devices

2015 ◽  
Vol 821-823 ◽  
pp. 785-788 ◽  
Author(s):  
Pavel Hazdra ◽  
Stanislav Popelka ◽  
Vít Zahlava
Keyword(s):  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Nitrogen Doping ◽  
Deep Level ◽  
Removal Rate ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Deep Acceptor ◽  
Measurement Results ◽  
Transient Spectroscopy

Commercial 1200V and 1700V MPS diodes and 1700V vertical JFETs produced on 4H-SiC n-type epilayers were neutron irradiated with fluences up to 4x1014 cm-2 (1 MeV neutron equivalent Si). Radiation defects and their effect on carrier removal were investigated by capacitance deep-level transient spectroscopy, I-V and C-V measurement. Results show that neutron irradiation introduces different point defects giving rise to deep acceptor levels which compensate nitrogen doping of the epilayer. The carrier removal rate increases linearly with nitrogen doping. Introduced defects deteriorate ON-state characteristics of irradiated devices while their effect on blocking characteristics is negligible. The effect of neutron irradiation can be simulated by TCAD tools using a simple model accounting for introduction of one dominant deep level (Z1/Z2 centre).

Sign in / Sign up

Export Citation Format

Share Document