Recent Improvements in Dry Etching of Hg1−xCdxTe By Ch4 Based Electron Cyclotron Resonance Plasmas

AbstractSignificant improvements of a previously reported etching process [1] for Hg1−xCdxTe have been achieved with respect to etch rate, surface morphology and surface stoichiometry by optimization of the process parameters. The gas phase and surface reactions driving the etching process have been analyzed by combined optical and electrical characterization of the plasma and surface analyses of the samples. A reaction scheme is suggested which allows to model and upscale the process in a consistent manner.

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Recent Improvements in Dry Etching of Hg1−xCdxTe by CH4 Based Electron Cyclotron Resonance Plasmas

MRS Proceedings ◽

10.1557/proc-484-259 ◽

1997 ◽

Vol 484 ◽

Cited By ~ 2

Author(s):

M. Seelmann-Eggebert ◽

A. Rar ◽

H. Zimmermann ◽

P. Meisen

Keyword(s):

Surface Morphology ◽

Gas Phase ◽

Cyclotron Resonance ◽

Etch Rate ◽

Electron Cyclotron Resonance ◽

Electrical Characterization ◽

Reaction Scheme ◽

Etching Process ◽

Consistent Manner

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Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmas

Applied Physics Letters ◽

10.1063/1.107122 ◽

1992 ◽

Vol 60 (16) ◽

pp. 1996-1998 ◽

Cited By ~ 10

Author(s):

P. W. Li ◽

Q. Wang ◽

E. S. Yang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electrical Characterization ◽

Bipolar Transistors ◽

Electron Cyclotron

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Electron cyclotron resonance-reactive CH/sub 4//H/sub 2//Ar with constant Ar flow for high etch rate and improvement of etched surface morphology

Digest of Papers. 2004 International Microprocesses and Nanotechnology Conference, 2004. ◽

10.1109/imnc.2004.245651 ◽

2004 ◽

Author(s):

Y. Awa ◽

T. Ide ◽

T. Arakawa ◽

N. Haneji ◽

K. Tada ◽

...

Keyword(s):

Surface Morphology ◽

Cyclotron Resonance ◽

Etch Rate ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Etch Rate ◽

Etched Surface

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Electrical Characterization of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Irradiation

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.6981 ◽

2005 ◽

Vol 44 (9B) ◽

pp. 6981-6984 ◽

Cited By ~ 65

Author(s):

Yukio Fukuda ◽

Tomoo Ueno ◽

Shigeru Hirono ◽

Satoshi Hashimoto

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electrical Characterization ◽

Electron Cyclotron ◽

Germanium Oxide ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Irradiation ◽

Resonance Plasma

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Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal–insulator–semiconductor structures fabrication

Journal of Applied Physics ◽

10.1063/1.371774 ◽

1999 ◽

Vol 86 (12) ◽

pp. 6924-6930 ◽

Cited By ~ 4

Author(s):

R. Peláez ◽

E. Castán ◽

S. Dueñas ◽

J. Barbolla ◽

E. Redondo ◽

...

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electrical Characterization ◽

Electron Cyclotron ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Trends in gas-phase fluoride ion affinities of main-group oxyfluorides and fluoride sulfides. Generation and characterization of the fluoride adducts of FAsO, FPO, FPO2, F2SiO, F4SO, FBO, F2SiS, FPS, FAsS, F2S2, and S2O by ion cyclotron resonance addition-elimination reactions

Inorganic Chemistry ◽

10.1021/ic00271a011 ◽

1987 ◽

Vol 26 (24) ◽

pp. 4018-4023 ◽

Cited By ~ 29

Author(s):

J. W. Larson ◽

T. B. McMahon

Keyword(s):

Gas Phase ◽

Cyclotron Resonance ◽

Main Group ◽

Fluoride Ion ◽

Ion Cyclotron Resonance ◽

Ion Cyclotron ◽

Elimination Reactions

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Etch characterization of a broad‐beam electron cyclotron resonance ion source

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576610 ◽

1990 ◽

Vol 8 (3) ◽

pp. 2945-2949 ◽

Cited By ~ 1

Author(s):

E. Ghanbari ◽

T. Nguyen ◽

S. Bui ◽

E. Ostan

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Ion Source ◽

Electron Cyclotron ◽

Beam Electron ◽

Broad Beam

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Transmission Characterization of Drilled Alternating-Layer Three-Dimensional Photonic Crystals

MRS Proceedings ◽

10.1557/proc-692-k2.8.1 ◽

2001 ◽

Vol 692 ◽

Author(s):

Eiichi Kuramochi ◽

Masaya Notomi ◽

Itaru Yokohama ◽

Jun-ichi Takahashi ◽

Chiharu Takahashi ◽

...

Keyword(s):

Photonic Crystal ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Light Transmission ◽

Photonic Band Gap ◽

Three Dimensional ◽

Dielectric Films ◽

Transmission Minimum ◽

Photonic Band

AbstractWe propose a new three-dimensional photonic crystal structure or drilled alternating-layer photonic crystal (DALPC), which can be fabricated by a combination of the deposition of alternating layers of dielectric films and one-time dry etching. Our band calculation predicts that the DALPC has a photonic band gap (PBG) in all directions. We fabricated a Si/SiO2DALPC by electron beam lithography, bias sputtering, and fluoride-gas electron cyclotron resonance etching. We measured the light transmission of the DALPC sample in both the in-plane and vertical directions. We observed a transmission minimum around the 1.4-μm-wavelength for all measured directions and TE/TM polarizations, which demonstrated a potential of the DALPC as a three-dimensional PBG material.

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