Simulation Study of IBE Process for III-V Compounds in Mesa and Trenches

1997 ◽  
Vol 490 ◽  
Author(s):  
L. Houlet ◽  
A. Rhallabi ◽  
G. Turban
Keyword(s):  
Ion Beam ◽  
Physical Phenomenon ◽  
Etching Rate ◽  
Pattern Transfer ◽  
Ion Beam Etching ◽  
Ion Energy ◽  
Experimental Profile ◽  
Etching Profile ◽  
Sputtering Yield ◽  
Good Agreement

ABSTRACTThe Ion Beam Etching (IBE) model is developed assuming the analogy between the evolution of hydrodynamic surfaces and that of vacuum-solid interfaces. The main physical phenomenon in the IBE is the ion sputtering where the transfer of ion energy to the surface allows to eject the surface atoms. The local etching rate is thus proportional to the energetic flux and to the sputtering yield. Mask erosion and shadowing are taken into account in the model. The angular dependence of the sputtering yield permits to underscore the faceting and trenching phenomena which respectively represent the formation of the facets in mask comers and the overetching in the trench sides. Besides, the effect of mask erosion on pattern transfer of both trench and mesa structures is studied. In comparison with the experimental profile, the simulated etching profile of the mesa, based on the IBE model, shows a good agreement.

Dry Etching of GaN Using Reactive Ion Beam Etching and Chemically Assisted Reactive Ion Beam Etching

1997 ◽  
Vol 468 ◽  
Author(s):  
Jae-Won Lee ◽  
Hyong-Soo Park ◽  
Yong-Jo Park ◽  
Myong-Cheol Yoo ◽  
Tae-Il Kim ◽  
...  
Keyword(s):  
Room Temperature ◽  
Volume Fraction ◽  
Ion Beam ◽  
Etching Rate ◽  
Dry Etching ◽  
Ion Beam Etching ◽  
Etching Profile ◽  
Etching Parameters ◽  
Etching Selectivity ◽  
Reactive Ion Beam Etching

ABSTRACTDry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropie etching profile with a smooth surface was obtained for tilted RIBE with Ch at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Ch was larger than 0.83.

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator

2010 ◽  
Vol 87 (5-8) ◽  
pp. 1597-1599 ◽  
Author(s):  
D. Kunder ◽  
E. Baer ◽  
M. Sekowski ◽  
P. Pichler ◽  
M. Rommel
Keyword(s):  
Monte Carlo ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Sputtering Yield

The Importance of Self-Sputtering by Low Energy Ions in Partially Ionized Beam Deposition

1989 ◽  
Vol 157 ◽  
Author(s):  
P. Bai ◽  
CH. SteinbrÜChel ◽  
T.-M. Lu
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Threshold Energy ◽  
The Self ◽  
Ion Energy ◽  
Sputtering Yield ◽  
Partially Ionized ◽  
Low Energy Ions ◽  
Deposition Techniques ◽  
Beam Deposition

ABSTRACTIn ion-assisted deposition techniques such as partially ionized beam deposition, ions derived from the depositing material itself concurrently bombard the surface during thin film growth. The ion percentage in the deposition beam ranges from less than 0.1% to 100% (Ion Beam Deposition) with the ion energy varying between a few eV and several keV. When the sputtering yield of the self-sputtering is greater than one, there is a critical ion percentage, for a given ion energy, above which no net deposition can be obtained. The self-sputtering yield is shown to have a square root dependence on the ion energy above the threshold energy by fitting the experimental data obtained from the literature. The critical ion percentage for Al, Cu, Au, Ag, and C is then calculated and plotted as a function of the ion energy so that deposition and no-deposition regions are illustrated in terms of the ion energy and ion percentage.

Focused ION Beam Etching of GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

AbstractWe have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RME) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10-4 μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.

Low Energy Fluoroboron Ion Beam Interaction with Silicon Single Crystals

1992 ◽  
Vol 279 ◽  
Author(s):  
L. J. Huang ◽  
W. M. Lau ◽  
I. V. Mitchell ◽  
S.-T. Lee
Keyword(s):  
Accumulation Rate ◽  
Ion Beam ◽  
Etching Rate ◽  
Silicon Crystal ◽  
Low Energy ◽  
Implantation Energy ◽  
Ion Energy ◽  
Ion Interactions ◽  
Energy Dependent ◽  
Physical And Chemical

ABSTRACTFluoroboron (BF2+) ion implantation into silicon is frequently used for fabrication of shallow junctions. For scaling down of the junction dimensions, one of the efficient approaches is to lower the implantation energy. This work reports fluoroboron ion interactions with (100) oriented silicon at 10 to 500 eV ion energy. Ion bombardment was carried out using a mass-separated BF2+ ion beam in an ultrahigh vacuum low energy ion beam system. The temperature of the silicon crystal during bombardment was kept either at room temperature or 500°C. The reactions (both etching and incorporation) were characterized by x-ray photoemission spectroscopy (XPS), Rutherford backscattering (RBS) and Raman scattering. The results show that BF2+ ions dissociated on the silicon surface at an energy as low as 10 eV and most of fluorine segregated to the surface and desorbed. Both the physical and chemical etching rate of the beam were energy dependent but much lower than the accumulation rate. For beam fluences higher than 1 × 1018/cm2, continuous amorphous boron films were deposited on silicon.

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