Real Time Observation of Material Deformation Processes by Synchrotron White Beam X-ray Topography

1997 ◽  
Vol 502 ◽  
Author(s):  
Z. B. Zhao ◽  
J. Hershberger ◽  
Z. U. Rek ◽  
J. C. Bilello
Keyword(s):  
Single Crystals ◽  
Real Time ◽  
High Strength ◽  
X Ray ◽  
White Beam ◽  
Experimental Apparatus ◽  
Tensile Data ◽  
Deformation Processes ◽  
Time Observation ◽  
The Stability

ABSTRACTAn experimental apparatus which exploits synchrotron white beam X-ray diffraction topography has been developed to perform real time in situ observation of deformation processes of single crystals. The apparatus consists of a fully automated and remotely controlled mini-tensile device and a CCD based X-ray imaging detector with associated video system. Both tensile data and X-ray topographic images are recorded simultaneously. The materials under study include single crystals of Si, and single crystals or bicrystals of the refractory metals W and Mo. The deformation processes of these crystals have been studied by monitoring a selected transmission Laue spot while the specimen is mechanically cycled by loading and unloading. The X-ray images have been captured by a frame grabber and recorded via a VCR. Several phenomena have been observed, including bending contours, strain concentrations, reversible anelastic effect and microyielding. The observed stress relaxations are correlated to microstructural variations shown by X-ray topography. The stability of low angle grain boundaries in bicrystals; and the effect of high strength and toughness coatings on the deformation of single crystal substrates was investigated.

Real time In Situ X-Ray Topographic Observation of Deformation of Single Crystals and Thin Films

1998 ◽  
Vol 524 ◽  
Author(s):  
Z. B. Zhao ◽  
J. Hershberger ◽  
A. Chiaramonti ◽  
Z. U. Rek ◽  
J. C. Bilello
Keyword(s):  
Real Time ◽  
X Ray ◽  
Mechanical Cycling ◽  
Experimental Apparatus ◽  
Tensile Data ◽  
Deformation Behaviors ◽  
Deformation Processes ◽  
Increasing Temperature ◽  
Increasing Load

ABSTRACTAn experimental apparatus, which is capable of performing real time in situ X-ray topographic observation of deformation process via synchrotron white beam topography, has been developed. This device enables both tensile data (load-displacement) and topographic images to be recorded simultaneously. It has been utilized to study the deformation behaviors of crystals of Mo and W.These specimens have been subject to mechanical cycling with increasing load, and their deformation processes have been observed in real time and in situ via x-ray topography. This leads to the observation of several phenomena, which would have been difficult to reveal by other experimental techniques. They include stress concentration, microyielding, reversible variation of contrasts and stress relaxation. In addition, the deformation behaviors of small angle grain boundaries have also been examined. Furthermore, the specimens can be heated through a heating device attached to the tensile stage, which allows high temperature topography to be performed in real time. The technique has been applied to the Ta films on Si (100) substrates. With increasing temperature, the topographic observations have revealed that the Ta films yield, fracture and then proceed to delaminate from their substrates.

scholarly journals Real Time Observation of X-ray-Induced Surface Modification Using Simultaneous XANES and XEOL-XANES

2013 ◽  
Vol 85 (20) ◽  
pp. 9556-9563 ◽  
Author(s):  
Annemie Adriaens ◽  
Paul Quinn ◽  
Sergey Nikitenko ◽  
Mark G. Dowsett
Keyword(s):  
Surface Modification ◽  
Real Time ◽  
X Ray ◽  
Time Observation ◽  
Real Time Observation

Characterization of Defect Structures in 3C-SiC Single Crystals Using Synchrotron White Beam X-ray Topography

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Huang ◽  
M. Dudley ◽  
C. Fazi
Keyword(s):  
Single Crystals ◽  
Stacking Faults ◽  
Interference Microscopy ◽  
Defect Structures ◽  
Growth Sector ◽  
X Ray ◽  
Partial Dislocations ◽  
White Beam ◽  
Transmission And Reflection

AbstractDefect structures in (111) 3C-SiC single crystals, grown using the Baikov technique, have been studied using Synchrotron White Beam X-ray Topography (SWBXT). The major types of defects include complex growth sector boundary structures, double positioning twins, stacking faults on { 111 } planes, inclusions and dislocations (including growth dislocations and partial dislocations bounding stacking faults). Detailed stacking fault and double positioning twin configurations are determined using a combination of Nomarski interference microscopy, SEM and white beam x-ray topography in both transmission and reflection geometries. Possible defect generation phenomena are discussed.

Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography

1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
C. Carter ◽  
D. Asbury ◽  
C. Fazit
Keyword(s):  
Detailed Analysis ◽  
Single Crystals ◽  
Basal Plane ◽  
Defect Structures ◽  
Dislocation Generation ◽  
Screw Dislocations ◽  
X Ray ◽  
White Beam

ABSTRACTSynchrotron white beam X-ray topography has been used to characterize defect structures in 6H-SiC wafers grown on (0001) seeds. Two major types of defects are observed: super screw dislocations approximately perpendicular to the basal plane and dislocation networks lying in the basal plane. The super screw dislocations, which have open cores, are growth dislocations. These dislocations act as sources and/or sinks for the glide dislocation networks. Detailed analysis and discussion of dislocation generation phenomena and Burgers vectors will be presented.

scholarly journals On the Stability of 3C-SiC Single Crystals at High Temperatures

2012 ◽  
Vol 717-720 ◽  
pp. 493-496
Author(s):  
Deborah Dompoint ◽  
Irina G. Galben-Sandulache ◽  
Alexandre Boulle ◽  
Didier Chaussende ◽  
Dominique Eyidi ◽  
...  
Keyword(s):  
Single Crystals ◽  
Volume Fraction ◽  
Diffuse Intensity ◽  
X Ray ◽  
Partial Dislocations ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
The Stability ◽  
Kinetics Of ◽  
Evolution With Time

The 3C-6H polytypic transition in 3C-SiC single crystals is studied by means of diffuse X-ray scattering (DXS) coupled with transmission electron microscopy (TEM). TEM reveals that the partially transformed SiC crystals contain regions of significantly transformed SiC (characterized by a high density of stacking faults) co-existing with regions of pure 3C-SiC. The simulation of the diffuse intensity allows to determine both the volume fraction of transformed material and the transformation level within these regions. It is further shown that the evolution with time and temperature of the transition implies the multiplication and glide of partial dislocations, the kinetics of which are quantified by means of DXS.

Dynamics of the nanocrystal structure and composition in growth solutions monitored by in situ lab-scale X-ray diffraction

Nanoscale ◽  
2021 ◽  
Author(s):  
Helena Fridman ◽  
Michael Volokh ◽  
Taleb Mokari
Keyword(s):  
Real Time ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanocrystal Growth ◽  
Novel Approach ◽  
Phase Size ◽  
Time Observation ◽  
Real Time Observation

Nanocrystal growth dynamics are investigated by a novel approach: real-time observation of nanocrystals in growth solutions using lab-scale in situ X-ray diffraction. The method reveals the evolution of crystal phase, size, shape, and composition.

scholarly journals The Stability of Icosahedral Cd-Yb

2003 ◽  
Vol 805 ◽  
Author(s):  
Günter Krauss ◽  
Sofia Deloudi ◽  
Andrea Steiner ◽  
Walter Steurer ◽  
Amy R. Ross ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ambient Temperature ◽  
Mechanical Stress ◽  
Single Crystals ◽  
High Temperatures ◽  
Low Temperatures ◽  
Ambient Pressure ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Stability

ABSTRACTThe stability of single-crystalline icosahedral Cd-Yb was investigated using X-ray diffraction methods in the temperature range 20 K ≤ T ≤ 900 K at ambient pressure and from ambient temperature to 873 K at about 9 GPa. Single-crystals remain stable at low temperatures and in the investigated HP-HT-regime. At high temperatures and ambient pressure, the quasicrystal decomposes. The application of mechanical stress at low temperatures yields to the same decomposition, the formation of Cd. A reaction of icosahedral Cd-Yb with traces of oxygen or water causing the decomposition seems reasonable, but a low-temperature instability of this binary quasi-crystal cannot be ruled out totally.

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