Quasi-Ballistic Stable Electron Emission from Porous Silicon Cold Cathodes
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AbstractBased on the previously-reported porosity multilayer technique, cold electron emission properties of porous silicon (PS) electroluminescent diodes with a structure of Au/PS/n-type Si are further improved by introducing a graded-band multilayer structure. It is shown that electrons are quasiballisticly emitted from PS diodes owing to a significantly reduced electron scattering in PS layer. As a result, the emission current shows a fluctuation-free behavior. These observations are very important for both understanding the electron transport in PS and developing high performance electron emitters in application to vacuum microelectronic technology.
2005 ◽
Vol 19
(24)
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pp. 1207-1211
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1997 ◽
Vol 15
(5)
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pp. 1661
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2015 ◽
Vol 22
(3)
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pp. 761-767
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1995 ◽
Vol 34
(Part 2, No. 6A)
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pp. L705-L707
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2016 ◽
Vol 4
(2)
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pp. 552-560
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