Effect of Ar Sputtering Pretreatment on the Electromigration Resistance in Al-Cu/TiN/Ti Interconnects

1998 ◽  
Vol 516 ◽  
Author(s):  
L.P. Wang ◽  
A. Chuang ◽  
L.T. Lin ◽  
F.S. Huang ◽  
K. Perng ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectroscopy ◽  
Concentration Distribution ◽  
Auger Electron ◽  
Elemental Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Intensity ◽  
Secondary Ion ◽  
A Current

AbstractThe 1 µm-wide Al-0.5wt%Cu/TiN/Ti interconnect, on the oxidized Si(100) wafer without Al sputtering pretreatment on the SiO2 surface prior to Ti deposition, failed after stressing with a current density of 1 × 106 A/cm2 for 190 hr at 175°C. In contrast, the interconnect with Ar sputtering pretreatment did not fail after stressing under the same condition for 550 hr. X-ray diffraction spectra indicated that the Ar sputtering pretreatment lowered Al(111) peak intensity down to 1/46 of its magnitude. This result suggests that the improvement of electromigration resistance by Ar sputtering pretreatment is not due to Al(111) texture, which is opposite to the result of Shibata et al. (Jpn. J. Appl. 32, 4479 (1993)). The elemental concentration distribution in depth was characterized on Al-Cu/TiN/Ti multilayers with and without Ar sputtering pretreatment by using secondary ion mass spectroscopy and Auger electron microscopy. A fairly large amount of oxygen and nitrogen was found to segregate near the Al-Cu/TiN interface. The phenomenon associated with the large amount of segregated oxygen and nitrogen is attributed to the enhancement of electromigration resistance.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

The Distribution of Phosphorus in Romano-British Ironwork

1990 ◽  
Vol 185 ◽  
Author(s):  
Alain E. Kaloyeros ◽  
Robert M. Ehrenreich
Keyword(s):  
Electron Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Materials Analysis ◽  
X Ray ◽  
Transmission Electron ◽  
Depth Study ◽  
Iron Artifacts ◽  
And Performance ◽  
Secondary Ion

AbstractPhosphorus is found to be a common impurity in many of the iron tools and weapons produced during the pre-Roman and Roman Iron Ages of Britain (600 BC - 300 AD). The effects of this impurity on the properties and performance of antiquarian materials is not well understood, however. This paper presents the initial findings of an in-depth study of the distribution, chemistry, and effects of phosphorus in Romano-British ironwork. For this purpose, two Romano-British iron artifacts from the site of Ircheoter, Northamptonshire, were examined using powerful techniques for archeological materials analysis that include electron microprobe, secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) with energydispersive x-ray spectroscopy capabilities (EDXS), and Auger electron spectroscopy (AES). It was found that phosphorous was indeed present in the artifacts. The phosphorus atoms were predominantly segregated at grain boundaries and thus should have led to a lowering of grain boundary cohesion and a degradation in the performance of the tools.

scholarly journals Comparison of nitrogen compositions in the as-grown GaNxAs1−x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy

2002 ◽  
Vol 80 (22) ◽  
pp. 4136-4138 ◽  
Author(s):  
W. J. Fan ◽  
S. F. Yoon ◽  
T. K. Ng ◽  
S. Z. Wang ◽  
W. K. Loke ◽  
...  
Keyword(s):  
High Resolution ◽  
Mass Spectroscopy ◽  
X Ray Diffraction ◽  
Secondary Ion Mass Spectroscopy ◽  
X Ray ◽  
Secondary Ion
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