The Formation of Abrupt N+ Doping Profiles Using Atomic Hydrogen and Sb During Si MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
P.E. Thompson ◽  
C. Silvestre ◽  
M. Twigg ◽  
G. Jernigan ◽  
D.S. Simons
Keyword(s):  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Molecular Beam Epitaxy Growth ◽  
Atomic Concentration ◽  
Hall Measurements ◽  
N Doping ◽  
Sb Doping ◽  
Doping Profiles ◽  
Secondary Ion

AbstractPreviously, atomic hydrogen has been shown to be effective in reducing the segregation of Sb on Si(100) during solid source molecular beam epitaxy growth. In this work we have investigated the electrical activation of the Sb. Using Hall measurements, spreading resistance profilometry, and secondary ion mass spectrometry, we have demonstrated that the co-deposition of atomic hydrogen during Sb doping of Si at 500°C produced well-defined doping spikes. Comparing the sheet carrier concentration obtained by Hall measurements to the Sb atomic concentration obtained by SIMS, the overall activation of the Sb was greater than 50%.

A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
A.J. Ptak ◽  
T.H. Myers ◽  
Lijun Wang ◽  
N.C. Giles ◽  
M. Moldovan ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Rf Plasma ◽  
Dopant Incorporation ◽  
Optical Activation ◽  
P Type ◽  
Kinetics Of ◽  
Secondary Ion

ABSTRACTStep-doped structures of both magnesium and beryllium were grown in GaN and analyzed using secondary ion mass spectrometry. Dopant incorporation was studied as a function of substrate temperature and dopant flux for Ga-polarity and N-polarity GaN. Incorporation is different for each polarity, with Mg incorporating by up to a factor of 20 times more (30 times more with atomic hydrogen) on the Ga-face, while Be incorporates more readily on the N-face. The effect of atomic hydrogen on the incorporation kinetics of both Mg and Be is also discussed. Mg and Be both undergo surface segregation during growth. Photoluminescence measurements suggest that Be is a p-type dopant with an optical activation energy of approximately 100 meV.

Effect of the oxidation of a silicide layer on dopant diffusion in the underlying silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
L. Kappius ◽  
A. K. Tyagi ◽  
U. Breuer ◽  
H. L. Bay ◽  
S. Manti
Keyword(s):  
Mass Spectrometry ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Silicide Layer ◽  
Before And After ◽  
Sb Doping ◽  
20 Nm ◽  
Secondary Ion

ABSTRACTWe have studied the influence of an epitaxial silicide layer on the diffusion of B and Sb in silicon. B and Sb doping superlattices have been grown by molecular beam epitaxy. They were then covered with a 20 nm thick CoSi2 layer. Test samples were also grown without silicide. Samples were oxidized at various temperatures ranging from 800°C to 1200°C for times that ensured sufficient broadening of the spikes. Another set of samples was annealed at the same times and temperatures in N2. Dopant depth profiles were measured before and after diffusion by secondary ion mass spectrometry (SIMS). At the test samples we observed thermal diffusion of B and Sb, oxidation enhanced diffusion of B and oxidation retarded diffusion of Sb, all in accordance with the literature. In contrast to this, oxidized silicide capped samples showed a retardation of B diffusion by a factor of 2 - 10 as compared to thermal diffusivity and an enhancement of Sb diffusion by a factor of 1 - 2.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si

1998 ◽  
Vol 321 (1-2) ◽  
pp. 120-124 ◽  
Author(s):  
P.E Thompson ◽  
C Silvestre ◽  
M Twigg ◽  
G Jernigan ◽  
D.S Simons
Keyword(s):  
Atomic Hydrogen ◽  
Sb Doping ◽  
Doping Profiles

Ion implantation of Carbon and Silicon into Ge2Sb2Te5: Ion Profiles and Post Crystallization Redistribution

2011 ◽  
Vol 1338 ◽  
Author(s):  
Guy M. Cohen ◽  
Simone Raoux ◽  
Marinus Hopstaken ◽  
Siegfried Maurer
Keyword(s):  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Carbon Doping ◽  
Recrystallization Annealing ◽  
Silicon Doping ◽  
Ion Energy ◽  
Ion Profiles ◽  
Dopant Redistribution ◽  
Doping Profiles ◽  
Secondary Ion

ABSTRACTIon implantation of Ge2Sb2Te5 (GST) enables localized doping of the film by using conventional lithography. Although the doped region dimensions and the doping concentration profile are defined by the opening in the mask and the ion energy, longitudinal and lateral straggling of implanted ions leads to a spread in the ions final location. Additionally, a thermal treatment such as one that induces a phase transition may lead to redistribution of the implanted dopants and further increase the spread. In this work we demonstrate doping of GST by ion implantation. Using Secondary Ion Mass Spectrometry (SIMS) we studied the as-implanted doping profiles obtain by ion implantation of carbon and silicon into GST. We also investigated by SIMS the dopant redistribution following a recrystallization annealing. The as-implanted ion profiles were found to be in fair agreement with TRIM simulation. The dopants profiles show little change after a crystallization annealing at 200°C for silicon doping and at 350°C for carbon doping.

Diffusion of Boron in Silicon and Silicon-Germanium in the Presence of Carbon

2005 ◽  
Vol 237-240 ◽  
pp. 998-1003
Author(s):  
Mudith S.A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Peter Ashburn ◽  
Arthur F.W. Willoughby
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Coefficients ◽  
Silicon Germanium ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Coated Surfaces ◽  
Secondary Ion ◽  
Strained Sige

Boron diffusion in Si and strained SiGe with and without C was studied. Using gassource molecular beam epitaxy (MBE), B containing epitaxial layers of: (i) Si, (ii) Si containing 0.1% C, (iii) SiGe with 11% Ge and (iv) SiGe with 11% Ge and with a 0.1% C, were grown on substrates. These samples were then rapid thermal annealed (RTA) at 940, 1000 and 1050°C in an O2 ambient. Self-interstitial-, vacancy- and non-injection conditions were achieved by annealing bare, Si3N4- and Si3N4+SiO2-coated surfaces, respectively. Concentration profiles of B, Ge and C were obtained using Secondary-Ion Mass Spectrometry (SIMS). Diffusion coefficients of B in each type of matrix were extracted by computer simulation. We find that B diffusivity is reduced by both Ge and C. The suppression due to C is much larger. In all materials, a substantial enhancement of B diffusion was observed due to self-interstitial injection compared to non-injection conditions. These results indicate that B diffusion in all four types of layers is mediated primarily by interstitialcy type defects.

The Effect of Hydrogen on the Molecular-Beam-Epitaxy Growth of GaN on Sapphire Under Ga-Rich Conditions

1996 ◽  
Vol 449 ◽  
Author(s):  
S. L. Buczkowski ◽  
Zhonghai Yu ◽  
M. Richards-Babb ◽  
N. C. Giles ◽  
L. T. Romano ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nucleation And Growth ◽  
Rf Plasma ◽  
Molecular Beam Epitaxy Growth ◽  
Dramatic Effect ◽  
Inversion Domain

ABSTRACTNucleation and growth of GaN under Ga-rich conditions by molecular beam epitaxy using a nitrogen rf plasma source is shown to result in both a smoother GaN surface and a reduced inversion domain content. In addition, preliminary results of the dramatic effect of atomic hydrogen on growth kinetics for Ga-rich growth are presented.

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