Unique Defect-Induced Donor Structure at the Lattice Mismatched InAs/GaP Heterointerface

1998 ◽  
Vol 535 ◽  
Author(s):  
V. Gopal ◽  
E.-H. Chen ◽  
E. P. Kvam ◽  
J. M. Woodall
Keyword(s):  
Lattice Mismatch ◽  
Misfit Dislocations ◽  
High Electron ◽  
Epitaxial Relationship ◽  
Band Gap Engineering ◽  
Large Lattice ◽  
Device Applications ◽  
Direct Growth ◽  
Large Lattice Mismatch ◽  
Hall Sensors

AbstractWe have investigated the direct growth of narrow-gap InAs on wide-gap GaP by Molecular Beam Epitaxy. InAs and GaP have the largest mismatch among all the III-arsenides and the III-phosphides – 11%. A perfect epitaxial relationship is maintained between the InAs and the GaP despite the large lattice mismatch. Moreover, a reproducible defect structure with unique electronic properties is developed at the heterointerface. A point defect associated with the intersection of 90° misfit dislocations may act as an ordered, structural dopant. This dopant is fully ionized with a constant, high sheet carrier density of 1013 cm−2, independent of InAs layer thickness, and exhibits no freeze out even at 5 K. Device applications for such a system include temperature insensitive Hall sensors. We have also demonstrated high electron mobilities (over 10000 cm2/V-sec) in nominally undoped thick InAs layers grown on GaP. The explanation of this effect is presented to emphasize the exciting possibilities of band gap engineering in this system.

Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates

2004 ◽  
Vol 815 ◽  
Author(s):  
S. Nishino ◽  
A. Shoji ◽  
T. Nishiguchi ◽  
S. Ohshima
Keyword(s):  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Misfit Dislocations ◽  
High Electron ◽  
Large Area ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Cubic Silicon Carbide

AbstractCubic silicon carbide (3C-SiC) is a suitable semiconductor material for high temperature, high power and high frequency electronic devices, because of its wide bandgap, high electron mobility and high saturated electron drift velocity. The usage of Si substrates has the advantage of large area substrates for the growth of 3C-SiC layers. However, large lattice mismatch between 3C-SiC and Si (>20%) has caused the generation of defects such as misfit dislocations, twins, stacking faults and threading dislocations at the SiC/Si interface. Lateral epitaxial overgrowth (ELOG) of 3C-SiC on Si substrates using SiO2 has been reported to reduce the defect density. In this report, epitaxial growth of 3C-SiC on T-shape patterned (100) Si substrates has been investigated to reduce interfacial defects.

Epitaxial Growth in Large Lattice Mismatch Systems: Characteristics of Domain Epitaxy

1992 ◽  
Vol 280 ◽  
Author(s):  
Tsvetanka S. Zheleva ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Epitaxial Growth ◽  
Interfacial Energy ◽  
Lattice Mismatch ◽  
Misfit Dislocations ◽  
Orientation Relationships ◽  
Epitaxial Relationship ◽  
Model Calculations ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe characteristics of epitaxial growth in large lattice mismatch TiN/Si and TiN/GaAs systems are analyzed. The epitaxial growth in these large mismatch systems is modelled in terms of various energy contributions to the epilayer. The new mode of growth, defined as domain epitaxial growth in these high mismatch systems is maintained by the formation of misfit dislocations at repeated intervals. The epitaxial relationship within the domain consists of n interplanar distances of the overlayer film closely matching with m interplanar distances of the substrate, where m and n are integers. The interfacial energy is found to be a very important term in determining the orientation relationships. The results of the model calculations are compared with the experimental observations.

Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

2002 ◽  
Vol 737 ◽  
Author(s):  
E. Ertekin ◽  
P.A. Greaney ◽  
T. D. Sands ◽  
D. C. Chrzan
Keyword(s):  
Simple Model ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Equilibrium Analysis ◽  
Misfit Dislocations ◽  
Model Based ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

Nucleation of misfit and threading dislocations in GaSb/GaAs(001) heterostructure

1996 ◽  
Vol 54 ◽  
pp. 946-947
Author(s):  
W. Qian ◽  
M. Skowronski ◽  
R. Kaspi ◽  
M. De Graef
Keyword(s):  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Extended Defects ◽  
Large Lattice ◽  
Threading Dislocation Density ◽  
Small Lattice ◽  
Large Lattice Mismatch

GaSb thin film grown on GaAs is a promising substrate for fabrication of electronic and optical devices such as infrared photodetectors. However, these two materials exhibit a 7.8% lattice constant mismatch which raises concerns about the amount of extended defects introduced during strain relaxation. It was found that, unlike small lattice mismatched systems such as InxGa1-xAs/GaAs or GexSi1-x/Si(100), the GaSb/GaAs interface consists of a quasi-periodic array of 90° misfit dislocations, and the threading dislocation density is low despite its large lattice mismatch. This paper reports on the initial stages of GaSb growth on GaAs(001) substrates by molecular beam epitaxy (MBE). In particular, we discuss the possible formation mechanism of misfit dislocations at the GaSb/GaAs(001) interface and the origin of threading dislocations in the GaSb epilayer.GaSb thin films with nominal thicknesses of 5 to 100 nm were grown on GaAs(001) by MBE at a growth rate of about 0.8 monolayers per second.

Laser Processing, Characterization, and Modeling of Epitaxial Si/TiN/Si (100) Heterostructures

1992 ◽  
Vol 285 ◽  
Author(s):  
Rina Chowdhury ◽  
X. Chen ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Integrated Circuits ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Epitaxial Relationship ◽  
Domain Matching Epitaxy ◽  
Large Lattice ◽  
Unit Cells ◽  
Potential Applications ◽  
Large Lattice Mismatch ◽  
Radiation Hard

ABSTRACTWe have successfully deposited multilayer Si/ITiN/Si(100) epitaxial heterostructures at a substrate temperature of 600°C in a chamber maintained at a vacuum of ∼10−7 torr using pulsed laser (KrF: λ = 248 nm, τ = 25 ns) deposition. This silicon-on-conductor device configuration has potential applications in three-dimensional integrated circuits and radiation hard devices.The two interfaces were quite sharp without any indication of interfacial reaction between them. The epitaxial relationship was found to be <100> Si II<100> TiN II<100> Si. In the plane, four unit cells of TiN matched with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides the mechanism of epitaxial growth in systems with large lattice mismatch. Energetics and growth characteristics of such domain matching epitaxy in the high lattice mismatch Si/TiN/Si(100) system and possible device implications are discussed.

Nanopattern Formation by Periodic Array of Interfacial Misfit Dislocations in Bi(111)/Si(001) Heteroepitaxy

2007 ◽  
Vol 1059 ◽  
Author(s):  
Giriraj Jnawali ◽  
H. Hattab ◽  
C. Bobisch ◽  
A. Bernhart ◽  
E. Zubkov ◽  
...  
Keyword(s):  
Elasticity Theory ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Periodic Array ◽  
Misfit Dislocations ◽  
Strain Fields ◽  
Edge Type ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTDespite their large lattice mismatch of 18 %, the lattices of Bi(111) and Si(001) fit surprisingly well. A remaining compressive strain in the Bi film of 2.3 % along the direction is accommodated by the formation of a periodic array of edge-type misfit dislocations confined to the interface. The strain fields surrounding each dislocation interact with each other, producing a quasi-periodic nanopattern of grating-like periodic height undulations on the surface. The separation and the amplitude of the height undulations have been derived by spot profile analyzing LEED and STM surface height profiles. The observed undulations agree well with elasticity theory.

Characterization of Interfacial Structure in Large Lattice Mismatch Heteroepitaxy: Ag/Si (111)

1990 ◽  
Vol 209 ◽  
Author(s):  
D.C. McKenna ◽  
G.-C. Wang ◽  
K. Rajan
Keyword(s):  
Lattice Mismatch ◽  
Interfacial Structure ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Interfacial Structures ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Diffraction Patterns

ABSTRACTThe interfacial structure of a large lattice mismatched (˜25%) (111) Ag-Si system was studied by using transmission electron diffraction (SADP - Selected Area Diffraction Pattern). The epitaxial films of Ag (600–1200Å) were grown by MBE on flat Si(111) and misoriented Si(1ll) surfaces. We have examined the interfacial structures of the Ag on 2° misoriented Si(111) using diffraction patterns of cross sectional view. Through a detail analysis of thelocation and shape of the diffraction spots, we can determine the epitaxial relationship between Ag and Si, the small tilt angle of Ag(111) planes withrespect to the misoriented Si(111), the period of the finite terrace size of the misoriented Si substrate, and the size of the ordered region in the Ag film. The O-lattice analysis developed by Bollmann has beenapplied to this interface andthe result is compared with the SADP observation.

Transmission electron microscopy observation and optical property of sol-gel derived LiNbO3 films

1996 ◽  
Vol 11 (12) ◽  
pp. 3152-3157 ◽  
Author(s):  
K. Terabe ◽  
A. Gruverman ◽  
Y. Matsui ◽  
N. Iyi ◽  
K. Kitamura
Keyword(s):  
Lattice Mismatch ◽  
Sol Gel ◽  
Misfit Dislocations ◽  
Microscopy Observation ◽  
Continuous Film ◽  
Transmission Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Interface Structures ◽  
Optical Waveguiding

Crystallization behavior, defects, and interface structures of sol-gel derived LiNbO3 films on three kinds of substrates were examined. The nucleation was found to occur epitaxially at the interface between the film and the substrate. The continuous film is formed by coalescence of the island-like crystallites. When sapphire substrate is used, which has large lattice mismatch with the LiNbO3, the resulting film contains a large amount of micropores, twin structures, and misfit dislocations. On the other hand, while LiTaO3 and 5% MgO-doped LiNbO3 substrates with smaller mismatch are used as substrates, the films show no evidence of the formation of dislocations and twins. The film on 5% MgO-doped LiNbO3 substrate shows better optical waveguiding property.

Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy

2000 ◽  
Vol 6 (S2) ◽  
pp. 1106-1107
Author(s):  
Z. R. Dai ◽  
Sangbeom Kang ◽  
W. Alan Doolittle ◽  
Z. L. Wang ◽  
April S. Brown
Keyword(s):  
Lattice Mismatch ◽  
Defect Density ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
Interfacial Structure ◽  
High Electron ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Average Lattice ◽  
Lithium Gallate

The performance of III-Nitride based Light Emitting Diodes (LEDs), LASERs, GaN/AlGaN MODFETs (Modulation-doped Field Effect Transistors) and HEMTs (High Electron Mobility Transistors) have been improved dramatically over the past few years [1,2], despite the relatively poor material quality of GaN, as compared to GaAs, for example. The intrinsic properties of the materials system make it extremely well suited to both optoelectronic and microwave power transistor applications. Typically, GaN is grown on substrates such as GaAs, Al2O3 (sapphire) or SiC with large lattice mismatch. This has usually resulted in an extremely high defect density in the GaN layer. The growth of GaN on lithium gallate LiGaO2 (LGO) affords many advantages compared to all other available substrates. LGO offers the smallest average lattice mismatch of any available substrate for the Ill-nitrides. This facilitates the growth of high quality GaN directly on Lithium Gallate without the need for a defective buffer to decouple the strain associated with the large lattice mismatch of other substrates [3].

Epitaxial Growth of Thick Ag/Si(111) Films

1987 ◽  
Vol 102 ◽  
Author(s):  
K.-H. Park ◽  
H.-S. Jin ◽  
L. Luo ◽  
W.M. Gibson ◽  
G.-C. Wang ◽  
...  
Keyword(s):  
Pole Figure ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Rutherford Backscattering Spectrometry ◽  
Twin Structure ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Large Lattice ◽  
Axial Channeling ◽  
Large Lattice Mismatch

ABSTRACT600∼4000Å thick Ag films grown on 3∼4· misoriented Si(111) substrates by molecular beam epitaxy (MBE) technique have been studied by using x-ray pole-figure analysis and MeV He+ Rutherford Backscattering Spectrometry (RBS)/channeling technique. X-ray pole-figure measurements revealed that despite the large lattice mismatch (∼25%) between Ag and Si, Ag films with epitaxial relationship Ag(111)//Si(111):Ag[011]//Si[011] were grown with a small quantity (15∼20%) of twin structure. The <111> axial channeling minimum yield (Xmin) is reduced at the Ag surface as the Ag film thickness increases. These films were thermally stable up to 500°C annealing but the twinning disappeared after annealing

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