Laser Processing, Characterization, and Modeling of Epitaxial Si/TiN/Si (100) Heterostructures

1992 ◽  
Vol 285 ◽  
Author(s):  
Rina Chowdhury ◽  
X. Chen ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Integrated Circuits ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Epitaxial Relationship ◽  
Domain Matching Epitaxy ◽  
Large Lattice ◽  
Unit Cells ◽  
Potential Applications ◽  
Large Lattice Mismatch ◽  
Radiation Hard

ABSTRACTWe have successfully deposited multilayer Si/ITiN/Si(100) epitaxial heterostructures at a substrate temperature of 600°C in a chamber maintained at a vacuum of ∼10−7 torr using pulsed laser (KrF: λ = 248 nm, τ = 25 ns) deposition. This silicon-on-conductor device configuration has potential applications in three-dimensional integrated circuits and radiation hard devices.The two interfaces were quite sharp without any indication of interfacial reaction between them. The epitaxial relationship was found to be <100> Si II<100> TiN II<100> Si. In the plane, four unit cells of TiN matched with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides the mechanism of epitaxial growth in systems with large lattice mismatch. Energetics and growth characteristics of such domain matching epitaxy in the high lattice mismatch Si/TiN/Si(100) system and possible device implications are discussed.

Epitaxial Growth in Large Lattice Mismatch Systems: Characteristics of Domain Epitaxy

1992 ◽  
Vol 280 ◽  
Author(s):  
Tsvetanka S. Zheleva ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Epitaxial Growth ◽  
Interfacial Energy ◽  
Lattice Mismatch ◽  
Misfit Dislocations ◽  
Orientation Relationships ◽  
Epitaxial Relationship ◽  
Model Calculations ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe characteristics of epitaxial growth in large lattice mismatch TiN/Si and TiN/GaAs systems are analyzed. The epitaxial growth in these large mismatch systems is modelled in terms of various energy contributions to the epilayer. The new mode of growth, defined as domain epitaxial growth in these high mismatch systems is maintained by the formation of misfit dislocations at repeated intervals. The epitaxial relationship within the domain consists of n interplanar distances of the overlayer film closely matching with m interplanar distances of the substrate, where m and n are integers. The interfacial energy is found to be a very important term in determining the orientation relationships. The results of the model calculations are compared with the experimental observations.

Characterization of Interfacial Structure in Large Lattice Mismatch Heteroepitaxy: Ag/Si (111)

1990 ◽  
Vol 209 ◽  
Author(s):  
D.C. McKenna ◽  
G.-C. Wang ◽  
K. Rajan
Keyword(s):  
Lattice Mismatch ◽  
Interfacial Structure ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Interfacial Structures ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Diffraction Patterns

ABSTRACTThe interfacial structure of a large lattice mismatched (˜25%) (111) Ag-Si system was studied by using transmission electron diffraction (SADP - Selected Area Diffraction Pattern). The epitaxial films of Ag (600–1200Å) were grown by MBE on flat Si(111) and misoriented Si(1ll) surfaces. We have examined the interfacial structures of the Ag on 2° misoriented Si(111) using diffraction patterns of cross sectional view. Through a detail analysis of thelocation and shape of the diffraction spots, we can determine the epitaxial relationship between Ag and Si, the small tilt angle of Ag(111) planes withrespect to the misoriented Si(111), the period of the finite terrace size of the misoriented Si substrate, and the size of the ordered region in the Ag film. The O-lattice analysis developed by Bollmann has beenapplied to this interface andthe result is compared with the SADP observation.

Unique Defect-Induced Donor Structure at the Lattice Mismatched InAs/GaP Heterointerface

1998 ◽  
Vol 535 ◽  
Author(s):  
V. Gopal ◽  
E.-H. Chen ◽  
E. P. Kvam ◽  
J. M. Woodall
Keyword(s):  
Lattice Mismatch ◽  
Misfit Dislocations ◽  
High Electron ◽  
Epitaxial Relationship ◽  
Band Gap Engineering ◽  
Large Lattice ◽  
Device Applications ◽  
Direct Growth ◽  
Large Lattice Mismatch ◽  
Hall Sensors

AbstractWe have investigated the direct growth of narrow-gap InAs on wide-gap GaP by Molecular Beam Epitaxy. InAs and GaP have the largest mismatch among all the III-arsenides and the III-phosphides – 11%. A perfect epitaxial relationship is maintained between the InAs and the GaP despite the large lattice mismatch. Moreover, a reproducible defect structure with unique electronic properties is developed at the heterointerface. A point defect associated with the intersection of 90° misfit dislocations may act as an ordered, structural dopant. This dopant is fully ionized with a constant, high sheet carrier density of 1013 cm−2, independent of InAs layer thickness, and exhibits no freeze out even at 5 K. Device applications for such a system include temperature insensitive Hall sensors. We have also demonstrated high electron mobilities (over 10000 cm2/V-sec) in nominally undoped thick InAs layers grown on GaP. The explanation of this effect is presented to emphasize the exciting possibilities of band gap engineering in this system.

Epitaxial Growth of Thick Ag/Si(111) Films

1987 ◽  
Vol 102 ◽  
Author(s):  
K.-H. Park ◽  
H.-S. Jin ◽  
L. Luo ◽  
W.M. Gibson ◽  
G.-C. Wang ◽  
...  
Keyword(s):  
Pole Figure ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Rutherford Backscattering Spectrometry ◽  
Twin Structure ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Large Lattice ◽  
Axial Channeling ◽  
Large Lattice Mismatch

ABSTRACT600∼4000Å thick Ag films grown on 3∼4· misoriented Si(111) substrates by molecular beam epitaxy (MBE) technique have been studied by using x-ray pole-figure analysis and MeV He+ Rutherford Backscattering Spectrometry (RBS)/channeling technique. X-ray pole-figure measurements revealed that despite the large lattice mismatch (∼25%) between Ag and Si, Ag films with epitaxial relationship Ag(111)//Si(111):Ag[011]//Si[011] were grown with a small quantity (15∼20%) of twin structure. The <111> axial channeling minimum yield (Xmin) is reduced at the Ag surface as the Ag film thickness increases. These films were thermally stable up to 500°C annealing but the twinning disappeared after annealing

scholarly journals Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

2021 ◽  
Author(s):  
Mingming Jiang ◽  
Yang Liu ◽  
Ruiming Dai ◽  
Kai Tang ◽  
Peng Wan ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Lattice Mismatch ◽  
Semiconductor Materials ◽  
Large Lattice ◽  
Ag Nanowires ◽  
Large Lattice Mismatch ◽  
Enhanced Luminescence ◽  
Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

2015 ◽  
Vol 106 (14) ◽  
pp. 142106 ◽  
Author(s):  
Jianpeng Cheng ◽  
Xuelin Yang ◽  
Ling Sang ◽  
Lei Guo ◽  
Anqi Hu ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
High Mobility ◽  
Control Technology ◽  
Stress Control ◽  
Si Substrates ◽  
Induced Stress ◽  
Large Lattice ◽  
Large Lattice Mismatch

Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

1987 ◽  
Vol 102 ◽  
Author(s):  
D. L. Doering ◽  
F. S. Ohuchi ◽  
W. Jaegermann ◽  
B. A. Parkinson
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
Layered Material ◽  
Tungsten Disulfide ◽  
Layer By Layer ◽  
Metal Contacts ◽  
Layered Semiconductor ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

III-V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

1991 ◽  
Vol 4 (6) ◽  
pp. 217-219 ◽  
Author(s):  
S. Aboulhouda ◽  
J. P. Vilcot ◽  
M. Razeghi ◽  
D. Decoster ◽  
M. Francois ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Large Lattice ◽  
Large Lattice Mismatch

Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

2002 ◽  
Vol 737 ◽  
Author(s):  
E. Ertekin ◽  
P.A. Greaney ◽  
T. D. Sands ◽  
D. C. Chrzan
Keyword(s):  
Simple Model ◽  
Misfit Dislocation ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Equilibrium Analysis ◽  
Misfit Dislocations ◽  
Model Based ◽  
Large Lattice ◽  
Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

scholarly journals Epitaxial Growth of Germanium on Silicon for Light Emitters

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Chengzhao Chen ◽  
Cheng Li ◽  
Shihao Huang ◽  
Yuanyu Zheng ◽  
Hongkai Lai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Infrared ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Infrared Light ◽  
Multiple Quantum ◽  
Light Emitters ◽  
Large Lattice ◽  
Large Lattice Mismatch

This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

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