Understanding Structure and Electronic Properties of Extended Self-Interstitial Defects in Silicon
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AbstractThe results of an atomistic investigation on the coalescence mechanisms of self-interstitial {311} defects are presented. Formation energies and equilibrium configurations of defect structures are determined by tight-binding molecular dynamics simulation. We focus on the characterization of the lattice strain field around the defect complex: By means of the determination of the atomic stress distribution, we discuss how it may influence the formation mechanisms of the planar {311} structures. We also attempt a correlation between structural features and electronic properties through the analysis of defect-related orbitals occupations and inverse participation ratios.
2021 ◽
Vol 2103
(1)
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pp. 012124
1983 ◽
Vol 41
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pp. 194-195
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1995 ◽
Vol 53
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pp. 956-957
1995 ◽
Vol 53
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pp. 398-399
2017 ◽
Vol 17
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pp. 245-252
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