Sputter Deposited, Electrically Conductive, Oxidation Resistant Coatings

1985 ◽  
Vol 54 ◽  
Author(s):  
Sharon K. Rutledge
Keyword(s):  
Indium Tin Oxide ◽  
Electromagnetic Interference ◽  
Atomic Oxygen ◽  
Ion Beam ◽  
Space Plasma ◽  
Polymer Materials ◽  
Electrically Conductive ◽  
Solar Arrays ◽  
Oxidation Resistant ◽  
Sputter Deposited

ABSTRACTSignificant polymer weight loss has been observed due to environmental ashing by atomic oxygen at low earth orbital (LEO) altitudes. Static charging during deployment and charging caused by the space plasma in LEO polar orbits may cause electromagnetic interference (EMI) problems on insulating polymer materials that are integral to such applications as high voltage solar arrays. Simultaneous ion beam sputter deposited coatings of indium-tin-oxide (ITO) with polytetrafluoroethylene (PTFE), carbon, air, or methane were investigated as potential solutions to these problems. The purpose of this research was to improve the flexibility of ITO coatings with these additives and to study the effect the addition of these materials had not only on the flexibility of ITO sputter deposited thin films but also on the conductivity and optical properties.

New conductive IBAD buffer for HTS applications

2001 ◽  
Vol 689 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Juergen Dzick ◽  
Lars-Oliver Kautschor ◽  
Christian Jooss ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Film Growth ◽  
Incident Angle ◽  
Texture Evolution ◽  
Ion Beam ◽  
Buffer Layers ◽  
Electrically Conductive ◽  
Ito Thin Films ◽  
Beam Parameters

ABSTRACTBiaxially aligned Indium Tin Oxide (ITO) thin films to be used as electrically conductive buffer layers were prepared by an Ion-Beam Assisted Deposition (IBAD) process on various substrates. Two Kaufman ion sources with 2.5 cm diameter were employed for the assisting and the sputtering beam, respectively. All deposited films revealed (001) oriented film growth with a strong in-plane alignment. The degree of the in-plane orientation was studied depending on the ion-beam parameters and the incident angle. Investigations (TEM and X-ray) of the texture evolution of these IBAD films during film growth were carried out. An in-plane texture of 12.6°FWHM for a 1 μm thick film has been achieved so far. The quality of the buffer has been demonstrated by the subsequent deposition of high-current carrying YBCO-films deposited by thermal coevaporation using a 3–5 nm thick Y2O3 interlayer. A jc of 0.76 MA/cm2 (77K, 0T) has been obtained for a 1 cm × 1 cm sample with ITO of 20° FWHM.

scholarly journals Transparent Microelectrode Arrays Fabricated by Ion Beam Assisted Deposition for Neuronal Cell In Vitro Recordings

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 497 ◽  
Author(s):  
Tomi Ryynänen ◽  
Ropafadzo Mzezewa ◽  
Ella Meriläinen ◽  
Tanja Hyvärinen ◽  
Jukka Lekkala ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Microelectrode Array ◽  
Electrode Materials ◽  
Ion Beam ◽  
Neuronal Cell ◽  
Measurement Properties ◽  
Ito Thin Films ◽  
Sputter Deposited

Microelectrode array (MEA) is a tool used for recording bioelectric signals from electrically active cells in vitro. In this paper, ion beam assisted electron beam deposition (IBAD) has been used for depositing indium tin oxide (ITO) and titanium nitride (TiN) thin films which are applied as transparent track and electrode materials in MEAs. In the first version, both tracks and electrodes were made of ITO to guarantee full transparency and thus optimal imaging capability. In the second version, very thin (20 nm) ITO electrodes were coated with a thin (40 nm) TiN layer to decrease the impedance of Ø30 µm electrodes to one third (1200 kΩ → 320 kΩ) while maintaining (partial) transparency. The third version was also composed of transparent ITO tracks, but the measurement properties were optimized by using thick (200 nm) opaque TiN electrodes. In addition to the impedance, the optical transmission and electric noise levels of all three versions were characterized and the functionality of the MEAs was successfully demonstrated using human pluripotent stem cell-derived neuronal cells. To understand more thoroughly the factors contributing to the impedance, MEAs with higher IBAD ITO thickness as well as commercial sputter-deposited and highly conductive ITO were fabricated for comparison. Even if the sheet-resistance of our IBAD ITO thin films is very high compared to the sputtered one, the impedances of the MEAs of each ITO grade were found to be practically equal (e.g., 300–370 kΩ for Ø30 µm electrodes with 40 nm TiN coating). This implies that the increased resistance of the tracks, either caused by lower thickness or lower conductivity, has hardly any contribution to the impedance of the MEA electrodes. The impedance is almost completely defined by the double-layer interface between the electrode top layer and the medium including cells.

Indium Tin Oxide Thin Films Deposited at Low Temperature Using Dual Ion Beam Sputtering

2014 ◽  
Vol 1699 ◽  
Author(s):  
Wilhelmus J. Geerts ◽  
Nelson A. Simpson ◽  
Alan D. Woodall ◽  
Maclyn Stuart Compton
Keyword(s):  
Flow Rate ◽  
Indium Tin Oxide ◽  
Atomic Oxygen ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

ABSTRACTITO samples were sputtered at room temperature by ion assisted dual ion beam sputtering using atomic or molecular oxygen. The electrical properties appear to depend on the oxygen flow rate during deposition and the resistivity decreases for samples sputtered at a higher oxygen flow rate (1-5 sccm). The resistivity is lowest at an oxygen flow rate of 4 sccm. The average absorption in the visible part of the spectrum also decreases as a function of the oxygen flow rate and is lower for samples sputtered with atomic oxygen. The figure of merit, i.e. the ratio of the conductivity versus the average absorption in the visible range, increases for higher oxygen flow rates and is typically 20-60% higher for samples sputtered using an atomic oxygen assist beam.

Optimization of Ta–Si–N thin films for use as oxidation-resistant diffusion barriers

2000 ◽  
Vol 15 (1) ◽  
pp. 194-198 ◽  
Author(s):  
C. Cabral ◽  
K. L. Saenger ◽  
D. E. Kotecki ◽  
J. M. E. Harper
Keyword(s):  
Oxygen Diffusion ◽  
Random Access ◽  
Argon Plasma ◽  
Diffusion Barriers ◽  
X Ray Diffraction ◽  
Electrically Conductive ◽  
Low Dielectric ◽  
Oxidation Resistant ◽  
Sputter Deposited ◽  
C 30

We have demonstrated that the optimum Ta–Si–N compositions for use as oxygen diffusion barriers in stacked-capacitor dynamic random-access memory structures with perovskite dielectrics are in the range Ta(20–25 at.%)–Si(20–45 at.%)–N(35–60 at.%). Twenty-two different Ta–Si–N compositions were evaluated, starting from six sputter-deposited Ta–Si alloys of which four were reactively deposited in 2–8% nitrogen in an argon plasma. The barriers were evaluated after an aggressive 650 °C/30 min oxygen anneal to determine if they remained electrically conductive, prevented oxygen diffusion and formation of low dielectric constant oxides, and had minimal interaction with the Pt electrode and underlying Si plug. Rutherford backscattering spectroscopy, four-point probe sheet resistance, through-film-resistance, and x-ray diffraction analysis techniques were used in the evaluation.

scholarly journals Multi-material braids for multifunctional laminates: conductive through-thickness reinforcement

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Caroline O’Keeffe ◽  
Laura Rhian Pickard ◽  
Juan Cao ◽  
Giuliano Allegri ◽  
Ivana K. Partridge ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Carbon Fibre ◽  
Electromagnetic Interference ◽  
Design Tool ◽  
Electrically Conductive ◽  
Current Collection ◽  
Wide Range ◽  
Predictive Design ◽  
The Right ◽  
Metal Wires

AbstractConventional carbon fibre laminates are known to be moderately electrically conductive in-plane, but have a poor through-thickness conductivity. This poses a problem for functionality aspects that are of increasing importance to industry, such as sensing, current collection, inductive/resistive heating, electromagnetic interference (EMI) shielding, etc. This restriction is of course more pronounced for non-conductive composite reinforcements such as glass, organic or natural fibres. Among various solutions to boost through-thickness electrical conductivity, tufting with hybrid micro-braided metal-carbon fibre yarns is one of the most promising. As a well-characterised method of through thickness reinforcement, tufting is easily implementable in a manufacturing environment. The hybridisation of materials in the braid promotes the resilience and integrity of yarns, while integrating metal wires opens up a wide range of multifunctional applications. Many configurations can be produced by varying braid patterns and the constituting yarns/wires. A predictive design tool is therefore necessary to select the right material configuration for the desired functional and structural performance. This paper suggests a fast and robust method for generating finite-element models of the braids, validates the prediction of micro-architecture and electrical conductivity, and demonstrates successful manufacturing of composites enhanced with braided tufts.

Study Of Indium Tin Oxide Films Exposed To Atomic Oxygen

1989 ◽  
Author(s):  
Paul G. Snyder ◽  
Bhola N. De ◽  
John A. .. WoolIam ◽  
T. J. Coutts ◽  
X. Li
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Atomic Oxygen ◽  
Oxide Films ◽  
Tin Oxide Films
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