Microstructural Characterization Methods for Magnetic Thin Films

1999 ◽  
Vol 562 ◽  
Author(s):  
J. E. Wittig ◽  
J. Bentley ◽  
T. P. Nolan
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Microstructural Characterization ◽  
Magnetic Thin Films ◽  
Complete Analysis ◽  
Structure Property ◽  
Characterization Methods ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
20 Nm

ABSTRACTMicrostructural characterization is key to determining the structure-property-processing relationships required to optimize the performance of magnetic thin films for longitudinal magnetic recording. Since the grain size of modem recording media is on the order of 10 to 20 nm, only high-resolution characterization methods such as transmission electron microscopy (TEM) can accurately describe the microstructure. Complete analysis requires a combination of conventional and high-resolution TEM imaging with analytical methods such as energy dispersivespectroscopy and energy-filtered TEM imaging. This paper provides examples from CoCr(Pt,Ta) alloys that reveal the strengths and limitations of these characterization methods as they apply to microstructural characterization of magnetic thin films.

Synthesis of Magnetic Thin Films on Glass Substrates Using NH3 Vapors

2012 ◽  
Vol 710 ◽  
pp. 762-767
Author(s):  
Pawan Kumar ◽  
Sunil Kumar Khah ◽  
Subhash Chander Katyal ◽  
Rajesh Kumar
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Exposure Time ◽  
Magnetite Nanoparticles ◽  
Magnetic Thin Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Low Exposure ◽  
20 Nm

Magnetic thin films in nanometer range have been synthesized on the glass substrates. The synthesis has been carried out using Fe2+ and Fe3+ ions in a PVA solution in H2O. A different approach has been used for the synthesis of the magnetic thin films by using NH3vapors. Obtained films have been characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and magnetic property measurement system (MPMS). The size and distribution of the magnetite nanoparticles inside the films depends upon the supply of the NH3 vapor. For large exposure time of NH3 vapors, film contains magnetite nanoparticles of size up to 80 nm. While for low exposure time of NH3 vapors, small magnetite nanoparticles of size nearly 20 nm have been obtained. The particles are independent to each other with no aggregation and are uniformly distributed inside the film.

Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD.

1999 ◽  
Vol 595 ◽  
Author(s):  
J.H. Mazur ◽  
M. Benamara ◽  
Z. Liliental-Weber ◽  
W. Swider ◽  
J. Washburn ◽  
...  
Keyword(s):  
Thin Films ◽  
Schottky Diodes ◽  
Three Dimensional ◽  
Growth Front ◽  
Tem Analysis ◽  
Al Content ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Means Of Transmission ◽  
20 Nm

AbstractAlxGa1−xN {x=30% (doped and undoped), 45% (doped)} thin films were grown by MOCVD on ∼2 µm thick GaN layer using Al2O3 substrate. These films were designed to be the active parts of HFETs with nsí product of about 1016(Vs)−1. The layers were then studied by means of transmission electron microscopy (TEM) techniques. In this paper, it is shown that the AlxGa1−xN layer thickness was non-uniform due to the presence of Vshaped defects within the AlxGa1−xN films. The nucleation of these V-shaped defects has taken place about 20 nm above the AlxGa1−xN/aN interface. Many of these Vshaped defects were associated with the presence of the threading dislocations propagating from the GaN/Al2O3 interface. We show that the density of these V-shaped defects increases with the doping level and also with the Al mole fraction in the films. The formation mechanism of the V-shaped defects seems to be related to the concentration of dopants or other impurities at the ledges of the growing film. This suggestion is supported by high resolution TEM analysis. The growth front between the V-shaped defects in the lower Al concentration thin films was planar as compared with F99W3.77 the three-dimensional growth in the doped, higher Al concentration film. This interpretation of the origin of the V-shaped defects is consistent with the observed lowering of the Schottky barrier height in n-doped AlGaN/Ni Schottky diodes.

scholarly journals Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1−xN Layers Grown by MOCVD

2000 ◽  
Vol 5 (S1) ◽  
pp. 294-300
Author(s):  
J.H. Mazur ◽  
M. Benamara ◽  
Z. Liliental-Weber ◽  
W. Swider ◽  
J. Washburn ◽  
...  
Keyword(s):  
Thin Films ◽  
Schottky Diodes ◽  
Three Dimensional ◽  
Growth Front ◽  
Tem Analysis ◽  
Al Content ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Means Of Transmission ◽  
20 Nm

AlxGa1−xN {x=30% (doped and undoped), 45% (doped)} thin films were grown by MOCVD on ∼2 μm thick GaN layer using Al2O3 substrate. These films were designed to be the active parts of HFETs with nsμ product of about 1016(Vs)-1. The layers were then studied by means of transmission electron microscopy (TEM) techniques. In this paper, it is shown that the AlxGa1−xN layer thickness was non-uniform due to the presence of V-shaped defects within the AlxGa1−xN films. The nucleation of these V-shaped defects has taken place about 20 nm above the AlxGa1−xN/GaN interface. Many of these V-shaped defects were associated with the presence of the threading dislocations propagating from the GaN/Al2O3 interface. We show that the density of these V-shaped defects increases with the doping level and also with the Al mole fraction in the films. The formation mechanism of the V-shaped defects seems to be related to the concentration of dopants or other impurities at the ledges of the growing film. This suggestion is supported by high resolution TEM analysis. The growth front between the V-shaped defects in the lower Al concentration thin films was planar as compared with the three-dimensional growth in the doped, higher Al concentration film. This interpretation of the origin of the V-shaped defects is consistent with the observed lowering of the Schottky barrier height in n-doped AlGaN/Ni Schottky diodes.

Domain Structures of Epitaxial SrRuO3 Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
J. C. Jiang ◽  
X. Pan ◽  
C. L. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Structural Characteristics ◽  
Pulsed Laser ◽  
Cross Sectional ◽  
Domain Structures ◽  
Transmission Electron ◽  
High Resolution Tem

ABSTRACTThe structural characteristics of SrRuO3 thin films deposited on a (001) SrTiO3 substrate by pulsed laser were studied by transmission electron microscopy (TEM) and high-resolution TEM. TEM studies of cross-sectional specimens revealed the epitaxial growth of the films with the SrRuO3-(110) plane parallel to the SrTiO3-(001) plane. Two types of 90° rotational domain structures were observed in both cross-sectional and plan-viewing specimens. The in-plane orientations of these domains with respect to the substrate are either of SrRuO3-[110] // SrTiO3 - [100] and SrRuO3-[001] // SrTiO3-[010], or of SrRuO3-[110] // SrTiO3-[010] and SrRuO3-[001] // SrTiO3-[100].

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Atomic structure of [0001]-tilt grain boundaries in ZnO:  A high-resolution TEM study of fiber-textured thin films

2004 ◽  
Vol 70 (12) ◽  
Author(s):  
Fumiyasu Oba ◽  
Hiromichi Ohta ◽  
Yukio Sato ◽  
Hideo Hosono ◽  
Takahisa Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
High Resolution Tem

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

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