Estimation of the Number of Injected Interstitial Atoms during Nitrous Oxidation of Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
D. Skarlatos ◽  
L.F. Giles ◽  
C. Tsamis ◽  
A. Claverie ◽  
D. Tsoukalas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperatures ◽  
Dislocation Loops ◽  
Ambient Conditions ◽  
Transmission Electron ◽  
Dry Oxidation ◽  
Interstitial Atoms ◽  
The Difference

ABSTRACTIn this work we use dislocation loops to monitor the interstitial injection during the oxynitridation (oxidation in 100% N2O ambient) of silicon at low temperatures (850–950 °C). The interstitials captured by the loops are measured using Transmission Electron Microscopy. The number of Si atoms released after oxynitridation was calculated from the difference in the total amount of atoms stored in the loops between oxidizing and inert ambient. We obtained that this number is larger compared with the respective under the same dry oxidation (in 100% O2 ambient) conditions.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Black-white contrast of dislocation loops

1978 ◽  
Vol 36 (1) ◽  
pp. 328-329
Author(s):  
J. J. Hren ◽  
W. D. Cooper ◽  
L. J. Sykes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dislocation Loops ◽  
Major Premise ◽  
Burgers Vector ◽  
Transmission Electron ◽  
Primary Means ◽  
Contrast Analysis ◽  
Dot Product ◽  
Imaging Conditions

Small dislocation loops observed by transmission electron microscopy exhibit a characteristic black-white strain contrast when observed under dynamical imaging conditions. In many cases, the topography and orientation of the image may be used to determine the nature of the loop crystallography. Two distinct but somewhat overlapping procedures have been developed for the contrast analysis and identification of small dislocation loops. One group of investigators has emphasized the use of the topography of the image as the principle tool for analysis. The major premise of this method is that the characteristic details of the image topography are dependent only on the magnitude of the dot product between the loop Burgers vector and the diffracting vector. This technique is commonly referred to as the (g•b) analysis. A second group of investigators has emphasized the use of the orientation of the direction of black-white contrast as the primary means of analysis.

scholarly journals Direct Characterization of the Relation between the Mechanical Response and Microstructure Evolution in Aluminum by Transmission Electron Microscopy In Situ Straining

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1431
Author(s):  
Seiichiro Ii ◽  
Takero Enami ◽  
Takahito Ohmura ◽  
Sadahiro Tsurekawa
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Elastic Behavior ◽  
Annealed Specimen ◽  
Displacement Curve ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Stress Drops

Transmission electron microscopy in situ straining experiments of Al single crystals with different initial lattice defect densities have been performed. The as-focused ion beam (FIB)-processed pillar sample contained a high density of prismatic dislocation loops with the <111> Burgers vector, while the post-annealed specimen had an almost defect-free microstructure. In both specimens, plastic deformation occurred with repetitive stress drops (∆σ). The stress drops were accompanied by certain dislocation motions, suggesting the dislocation avalanche phenomenon. ∆σ for the as-FIB Al pillar sample was smaller than that for the post-annealed Al sample. This can be considered to be because of the interaction of gliding dislocations with immobile prismatic dislocation loops introduced by the FIB. The reloading process after stress reduction was dominated by elastic behavior because the slope of the load–displacement curve for reloading was close to the Young’s modulus of Al. Microplasticity was observed during the load-recovery process, suggesting that microyielding and a dislocation avalanche repeatedly occurred, leading to intermittent plasticity as an elementary step of macroplastic deformation.

scholarly journals Effect of Aging Time on Crushing Performance of Al-0.5Mg-0.4Si Alloy for Safety Components of Automobile

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 608
Author(s):  
Jinkun Lu ◽  
Haichun Jiang ◽  
Lingying Ye ◽  
Daxiang Sun ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Tensile Test ◽  
Aging Time ◽  
Uniform Elongation ◽  
Total Elongation ◽  
Localized Deformation ◽  
Ductility Index ◽  
Transmission Electron ◽  
The Difference

The effect of aging time on the crushing performance of Al-0.5Mg-0.4Si alloy used for safety components of automobile was investigated by tensile test and crush test. Moreover, the microstructure of the alloy was investigated by transmission electron microscopy (TEM). The results show that the localized deformation ductility index, ΔAabs, which is defined as the difference between total elongation and uniform elongation, of Al-0.5Mg-0.4Si alloy is 6.5%, 7.0% and 8.5%, respectively, after being aged at 210 °C for 1, 3 and 6 h, and this tendency is the same as that of the crushing performance. The spacing of grain boundary precipitates (GBPs) from TEM results are found to be 94.9, 193.6 and 408.2 nm after being aged at 210 °C for 1, 3 and 6 h, respectively, and this tendency is same to that of ΔAabs. A mechanism about the relation between the spacing of GBPs and the ductility index ΔAabs has been proposed based on localized deformation around GBPs. With the increase of GBPs spacing, the ΔAabs increases, and the crushing performance is improved.

Influence of doping on crystal growth, structure and optical properties of nanocrystalline CaTiO3: a case study using small-angle neutron scattering

2015 ◽  
Vol 48 (3) ◽  
pp. 836-843 ◽  
Author(s):  
Oindrila Mondal ◽  
Manisha Pal ◽  
Ripandeep Singh ◽  
Debasis Sen ◽  
Subhasish Mazumder ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Properties ◽  
Crystal Growth ◽  
Small Angle Neutron Scattering ◽  
Ionic Radius ◽  
Ionic Radii ◽  
Growth Structure ◽  
Transmission Electron ◽  
The Difference

The effect of dopant size (ionic radius) on the crystal growth, structure and optical properties of nanocrystalline calcium titanate, CaTiO3(CTO), have been studied using small-angle neutron scattering. X-ray diffraction, along with high-resolution transmission electron microscopy, confirms the growth of pure nanocrystalline CTO. Rietveld analysis reveals that the difference of ionic radii between dopant and host ions induces strain within the lattice, which significantly affects the lattice parameters. The induced strain, due to the difference of ionic radii, causes the shrinkage of the optical band gap, which is manifested by the redshift of the absorbance band. Mesoscopic structural analysis using scattering techniques demonstrates that the ionic radius of the dopant influences the agglomeration behaviour and particle size. A high-resolution transmission electron microscopy study reconfirms the formation of pure highly crystalline CTO nanoparticles.

Structural Properties of Amorphous Silicon Produced by Electron Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Structural Properties ◽  
Electron Irradiation ◽  
Low Temperatures ◽  
Crystalline Silicon ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.

Conversion of platelets into dislocation loops and voidite formation in type IaB diamonds

1995 ◽  
Vol 449 (1936) ◽  
pp. 295-313 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Local Mode ◽  
Diamond Structure ◽  
Dislocation Loops ◽  
X Ray ◽  
Regular Type ◽  
Transmission Electron ◽  
Stable Conditions ◽  
The One

Type la natural diamonds have been heated in the temperature range of 2400-2700°C under stabilizing pressures. The specimens studied are mainly regular type IaB diamonds. Transmission electron microscopy studies of treated speci­mens show that platelets are converted to interstitial ½ a 0 <011> dislocation loops; voidites are also formed. When all the platelets have been converted, the ex­perimental features associated with them also disappear, i. e. the X-ray extra reflections (spikes), the B' local-mode absorption and the lattice absorption in the one-phonon region termed the D spectrum. It is discovered that when diamonds are heated under graphite-stable rather than diamond-stable conditions, the rate of conversion is considerably enhanced; for instance, at 2650°C there is an increase in the rate of about three orders of magnitude. This enhancement is considered to be due to the instability of the diamond structure itself and a reason for this enhancement is suggested.

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