Experimental and Theoretical Analysis of the Hall-Mobility in N-Type Bulk 6H- and 4H-SiC

1999 ◽  
Vol 572 ◽  
Author(s):  
S. T. G. Müller ◽  
D. Hofmann ◽  
A. Winnacker
Keyword(s):  
Theoretical Analysis ◽  
Hall Mobility ◽  
Phonon Scattering ◽  
Electron System ◽  
Quantitative Agreement ◽  
Coupling Constants ◽  
Effective Density ◽  
Iteration Algorithm ◽  
Bulk Crystals ◽  
Mobility Data

ABSTRACTThe electrical properties of nitrogen doped n-type 6H- and 4H-SiC bulk crystals grown by the Lely- or modified Lely-method have been characterized by Hall-measurements. The doping densities were determined by a fit of the neutrality equation to the experimental data, accounting for in-equivalent lattice sites and the temperature dependence of the effective density-of- states-mass extracted from recent results of ab-initio-calculations of the 6H- and 4H-SiC bandstructure [1]. The theoretical analysis of the Hall-mobility is based on an extended form of the Rode-Nag iteration algorithm [2]. The calculation scheme considers all relevant elastic and inelastic scattering mechanisms. the anisotropy of the crystal modifications and the possible effect of spatial inhomogeneities in the distribution of donors, acceptors or in the related electron system. Within these concepts it is possible to achieve a quantitative agreement between theoretical and experimental mobility data in 4H- and 6H-SiC over the whole temperature range of band conduction. New values for the acoustic deformation potentials Eac [15.0±0.5 eV (6H), 14.8±0.5 eV (4H)] and the coupling constants for intervalley phonon scattering Dint [2.3 ± 0.1 × 109eV/cm (6H), 2.6 ± 0.1 × 109eV/cm (4H)] are given.

Electrical and magnetic transport properties of Co-doped Bi2Se3 topological insulator crystals

2014 ◽  
Vol 28 (17) ◽  
pp. 1450108 ◽  
Author(s):  
Min Zhang ◽  
Li Lv ◽  
Zhantao Wei ◽  
Liqin Yang ◽  
Xinsheng Yang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Hall Mobility ◽  
Phonon Scattering ◽  
Magnetic Ordering ◽  
Co Doping ◽  
Mobility Data ◽  
Maximum Value ◽  
Co Concentration ◽  
Magnetic Transport ◽  
Metal Doped

Transition metal doped topological insulators (TI) Co x Bi 2-x Se 3 were prepared and the phase structure, electrical and magnetic transport properties, Hall mobility and Hall resistivity were studied. The lattice constant c decreased with the increasing Co concentration. All samples exhibited weak metallic resistivity. With increasing Co concentration, the value of ρxx increased, reaching a maximum at x = 0.02, and then decreased. The resistivity data could be fitted by different formulas below and above 30 K in all samples result from different mechanism corresponding to different temperature regions. The magnetoresistance (MR) of Bi 2 Se 3 TI showed a change dependence of concentration. The MR was enhanced by small quantity of Co doping, attaining a maximum value in Bi 1.98 Co 0.02 Se 3 crystal; but MR was suppressed in high-doped sample (x > 0.02). Those results were ascribed to the rivalry between the phonon scattering effect and the magnetic ordering in single crystals caused by Co ions. For low-doped samples doped, the contribution of phonon scattering was much higher than that of magnetic ordering, leading to larger MR value. However, in samples doped with higher Co concentrations, the magnetic ordering effect became dominant and caused the MR decreases. The MR increased with decreasing temperature and increasing magnetic field. The Hall mobility data indicated that incorporating Co in Bi 2 Se 3 single crystal can reduce native defect of Bi 2 Se 3.

scholarly journals Scattering Mechanisms and Suppression of Bipolar Diffusion Effect in Bi2Te2.85Se0.15Ix Compounds

Materials ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1564
Author(s):  
Jin Hee Kim ◽  
Song Yi Back ◽  
Jae Hyun Yun ◽  
Ho Seong Lee ◽  
Jong-Soo Rhyee
Keyword(s):  
Thermal Conductivity ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Lattice Distortion ◽  
Phonon Scattering ◽  
Iodine Concentration ◽  
Mean Free Path ◽  
Bandgap Energy ◽  
Diffusion Effect ◽  
Iodine Doping

We investigated the anisotropic thermoelectric properties of the Bi2Te2.85Se0.15Ix (x = 0.0, 0.1, 0.3, 0.5 mol.%) compounds, synthesized by ball-milling and hot-press sintering. The electrical conductivities of the Bi2Te2.85Se0.15Ix were significantly improved by the increase of carrier concentration. The dominant electronic scattering mechanism was changed from the mixed (T ≤ 400 K) and ionization scattering (T ≥ 420 K) for pristine compound (x = 0.0) to the acoustic phonon scattering by the iodine doping. The Hall mobility was also enhanced with the increasing carrier concentration. The enhancement of Hall mobility was caused by the increase of the mean free path of the carrier from 10.8 to 17.7 nm by iodine doping, which was attributed to the reduction of point defects without the meaningful change of bandgap energy. From the electron diffraction patterns, a lattice distortion was observed in the iodine doped compounds. The modulation vector due to lattice distortion increased with increasing iodine concentration, indicating the shorter range lattice distortion in real space for the higher iodine concentration. The bipolar thermal conductivity was suppressed, and the effective masses were increased by iodine doping. It suggests that the iodine doping minimizes the ionization scattering giving rise to the suppression of the bipolar diffusion effect, due to the prohibition of the BiTe1 antisite defect, and induces the lattice distortion which decreases lattice thermal conductivity, resulting in the enhancement of thermoelectric performance.

Protonenresonanz-Spektroskopie ungesättigter Ringsysteme I

1965 ◽  
Vol 20 (10) ◽  
pp. 948-956 ◽  
Author(s):  
Harald Günther
Keyword(s):  
Magnetic Resonance ◽  
Concentration Dependence ◽  
Proton Magnetic Resonance ◽  
Chemical Shifts ◽  
Electron System ◽  
Coupling Constants ◽  
Resonance Signal ◽  
Aromatic Character ◽  
Additional Support ◽  
Magnetic Resonance Spectra

The proton magnetic resonance spectra of 1.6-methano- and 1.6-oxido-cyclodecapentaene are described and analyzed in terms of chemical shifts and coupling constants. The results are discussed in connection with the structure and possible aromatic character of these compounds. Measurements of the concentration dependence of the chloroform resonance signal in solutions of both compounds give additional support for the presence of a delocalized 10 π-electron system.

scholarly journals A theoretical analysis of the semileptonic decays $$\eta ^{(\prime )}\rightarrow \pi ^0l^+l^-$$ and $$\eta ^\prime \rightarrow \eta l^+l^-$$

2020 ◽  
Vol 80 (12) ◽  
Author(s):  
Rafel Escribano ◽  
Emilio Royo
Keyword(s):  
Theoretical Analysis ◽  
Semileptonic Decays ◽  
Coupling Constants ◽  
Energy Spectra ◽  
Radiative Decays ◽  
Vector Meson Dominance ◽  
Decay Widths ◽  
Theoretical Predictions ◽  
First Time ◽  
Good Agreement

AbstractA complete theoretical analysis of the C- conserving semileptonic decays $$\eta ^{(\prime )}\rightarrow \pi ^0l^+l^-$$ η ( ′ ) → π 0 l + l - and $$\eta ^\prime \rightarrow \eta l^+l^-$$ η ′ → η l + l - ($$l=e$$ l = e or $$\mu $$ μ ) is carried out within the framework of the Vector Meson Dominance (VMD) model. An existing phenomenological model is used to parametrise the VMD coupling constants and the associated numerical values are obtained from an optimisation fit to $$V\rightarrow P\gamma $$ V → P γ and $$P\rightarrow V\gamma $$ P → V γ radiative decays ($$V=\rho ^0$$ V = ρ 0 , $$\omega $$ ω , $$\phi $$ ϕ and $$P=\pi ^0$$ P = π 0 , $$\eta $$ η , $$\eta ^{\prime }$$ η ′ ). The decay widths and dilepton energy spectra for the two $$\eta \rightarrow \pi ^0l^+l^-$$ η → π 0 l + l - processes obtained using this approach are compared and found to be in good agreement with other results available in the published literature. Theoretical predictions for the four $$\eta ^{\prime }\rightarrow \pi ^0l^+l^-$$ η ′ → π 0 l + l - and $$\eta ^\prime \rightarrow \eta l^+l^-$$ η ′ → η l + l - decay widths and dilepton energy spectra are calculated and presented for the first time in this work.

scholarly journals Carrier transport theory for twisted bilayer graphene in the metallic regime

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Girish Sharma ◽  
Indra Yudhistira ◽  
Nilotpal Chakraborty ◽  
Derek Y. H. Ho ◽  
M. M. Al Ezzi ◽  
...  
Keyword(s):  
Experimental Data ◽  
Carrier Transport ◽  
Transport Theory ◽  
Phonon Scattering ◽  
Twist Angle ◽  
Quantitative Agreement ◽  
Bilayer Graphene ◽  
Magic Angle ◽  
Accurate Treatment ◽  
Twisted Bilayer Graphene

AbstractUnderstanding the normal-metal state transport in twisted bilayer graphene near magic angle is of fundamental importance as it provides insights into the mechanisms responsible for the observed strongly correlated insulating and superconducting phases. Here we provide a rigorous theory for phonon-dominated transport in twisted bilayer graphene describing its unusual signatures in the resistivity (including the variation with electron density, temperature, and twist angle) showing good quantitative agreement with recent experiments. We contrast this with the alternative Planckian dissipation mechanism that we show is incompatible with available experimental data. An accurate treatment of the electron-phonon scattering requires us to go well beyond the usual treatment, including both intraband and interband processes, considering the finite-temperature dynamical screening of the electron-phonon matrix element, and going beyond the linear Dirac dispersion. In addition to explaining the observations in currently available experimental data, we make concrete predictions that can be tested in ongoing experiments.

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