Nanocrystalline Silicon Carbide Film Growth Using Hot Filament CVD

1999 ◽  
Vol 593 ◽  
Author(s):  
M.B. Yu ◽  
Rusli S.F. ◽  
Yoon J. ◽  
Cui K. Chew ◽  
J. Ahn ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Transverse Optical ◽  
Diffraction Spectrum ◽  
Optical Phonons ◽  
X Ray ◽  
Hot Filament

ABSTRACTNanocrystalline cubic silicon carbide (nc-SiC) films embedded in an amorphous SiC matrix was fabricated by the hot filament chemical vapor deposition (HFCVD) technique using methane and silane as reactance gases. The presence of nanocrystalline grains was confirmed by the high resolution transmission electron microscope (HRTEM). x-ray photoelectron spectroscopy (XPS) measurements showed that the atomic percentages of Si and C are nearly 50%. X-ray diffraction spectrum of the sample revealed a diffraction peak of 3C-SiC (111) at 2ϕ=35.6°. Infrared absorption of the film had a strong peak at 800 cm−1 which is related to the transverse optical phonons of Si-C bonds in 3C-SiC. Raman spectrum of the sample showed that there are two peaks at 790 cm−l and 970 cm−1 which correspond to longitudinal and transverse optical phonons of SiC respectively. Room temperature photoluminescence (PL) study of these nc-SiC samples revealed a visible peak at 2.2 eV, which has not been observed so far for 3C-SiC.

Influence of Thermal Treatments on the Chemistry and Self-Assembly of Ge Nanoparticles on SiO2 Surfaces

2004 ◽  
Vol 830 ◽  
Author(s):  
Scott K. Stanley ◽  
Shawn S. Coffee ◽  
John G. Ekerdt
Keyword(s):  
Photoelectron Spectroscopy ◽  
Self Assembly ◽  
Chemical Vapor ◽  
Thermal Treatments ◽  
X Ray ◽  
Agglomeration Process ◽  
Oxide Substrate ◽  
Temperature Programmed ◽  
Hot Filament ◽  
Substrate Temperatures

ABSTRACTGeH4 is thermally cracked over a hot filament depositing 0.7–15 ML Ge onto 2–7 nm SiO2/Si(100) at substrate temperatures of 300–970 K. Ge, GeHx, GeO, and GeO2 desorption is monitored through temperature programmed desorption in the temperature range 300–1000 K. Ge bonding changes are analyzed during annealing from 300–1000 K with X-ray photoelectron spectroscopy (XPS). Low temperature desorption features are attributed to GeO and GeH4. No GeO2 desorption is observed, but GeO2 decomposition to Ge through high temperature pathways is seen above 700 K. Germanium oxidization results from Ge etching of the oxide substrate, which is demonstrated through XPS. Ge nanoparticle formation on SiO2 is demonstrated using the agglomeration process. With these results, explanations for the difficulties of conventional chemical vapor deposition to produce Ge nanocrystals on SiO2 surfaces are proposed.

Parallel Bias-Enhanced Sulfur-Assisted Chemical Vapor Deposition of Nanocrystalline Diamond Films

2003 ◽  
Vol 775 ◽  
Author(s):  
Joel De Jesùs ◽  
Juan A. Gonzàlez ◽  
Oscar O. Ortiz ◽  
Brad R. Weiner ◽  
Gerardo Morell
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Defect Density ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
X Ray ◽  
Positively Charged

AbstractThe transformations induced by the application of a continuous bias voltage parallel to the growing surface during the sulfur-assisted hot-filament chemical vapor deposition (HFCVD) of nanocrystalline diamond (n-D) films were investigated by Raman spectroscopy (RS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The films were deposited on molybdenum substrates using CH4, H2 and H2S. Bias voltages in the range of 0 – 800 VDC were applied parallel to the substrate surface continuously during deposition. The study revealed a significant improvement in the films' density and a lowering in the defect density of the nanocrystalline diamond structure for parallel bias (PB) voltages above 400V. These high PB conditions cause the preferential removal of electrons from the gaseous environment, thus leading to the net accumulation of positive species in the volume above the growing film, which enhances the secondary nucleation. The nanoscale carbon nuclei self-assemble into carbon nano-clusters with diameters in the range of tens of nanometers, which contain diamond (sp3-bonded C) in their cores and graphitic (sp2-bonded C) enclosures. Hence, the observed improvement in film density and in atomic arrangement appears to be connected to the enhanced presence of positively charged ionic species, consistent with models which propose that positively charged carbon species are the crucial precursors for CVD diamond film growth.

Synthesis and characterization of B–C–N compounds on molybdenum

1999 ◽  
Vol 14 (3) ◽  
pp. 1137-1141 ◽  
Author(s):  
Jie Yu ◽  
E. G. Wang ◽  
Guichang Xu
Keyword(s):  
Substrate Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Synthesis And Characterization ◽  
Boron Carbonitride ◽  
X Ray ◽  
Hot Filament ◽  
N Compounds

B–C–N compounds were prepared on molybdenum by means of bias-assisted hot filament chemical vapor deposition (HFCVD). Effect of the substrate temperature (Ts) on the growth of B–C–N films has been investigated systematically by x-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) based on the detailed analysis and calculation of the XPS. The substrate temperature plays a key role in the formation of the bonding states, the composition, and the surface morphology. Boron carbonitride is the main phase at all depositing temperatures, and the obtained compounds are as follows: B0.83C0.17 + B0.39C0.35N0.26 at 873 K, B0.30C0.34N0.36 at 973 K, B0.64C0.36 + B0.51C0.23N0.26 at 1073 K, B0.51C0.31N0.18 at 1173 K, and B0.37C0.54N0.09 at 1273 K.

scholarly journals Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane

2022 ◽  
Vol 3 (1) ◽  
pp. 27-40
Author(s):  
Alain E. Kaloyeros ◽  
Jonathan Goff ◽  
Barry Arkles
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Reference Value ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Single Source ◽  
High Temperature Electronics ◽  
Single Source Precursor ◽  
High Vapor

Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses revealed that the as-deposited films consisted of a Si-C matrix with a Si:C ratio of ~1:1. FTIR and photoluminescence (PL) spectrometry studies showed that films deposited ≥ 750 °C were defect- and H-free within the detection limit of the techniques used, while ellipsometry measurements yielded an as-grown SiC average refractive index of ~2.7, consistent with the reference value for the 3C-SiC phase. The exceptional quality of the films appears sufficient to overcome limitations associated with structural defects ranging from failure in high voltage, high temperature electronics to 2-D film growth. TSCH, a liquid at room temperature with good structural stability during transport and handling as well as high vapor pressure (~10 torr at 25 °C), provides a viable single source precursor for the growth of stoichiometric SiC without the need for post-deposition thermal treatment.

Blue/White Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by PECVD

2009 ◽  
Vol 1153 ◽  
Author(s):  
Volodymyr Ivashchenko ◽  
Andrey Vasin ◽  
L. A. Ivashchenko ◽  
P. L. Skrynskyy
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Substrate Bias ◽  
Double Peak ◽  
Hydrogenated Silicon ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
The One

AbstractPhotoluminescence (PL) from hydrogenated silicon carbide (SiC:H) films is studied at room temperature. The films were deposited by plasma-enhanced chemical vapor (PECVD) technique with and without substrate bias using methyltrichlorosilane as a main precursor. After the deposition the samples were annealed at various temperatures in vacuum. The films were characterized by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The samples deposited without substrate bias (series A) were amorphous, whereas the samples deposited with negative substrate bias -100V (series B) were nanocrystalline. The one-peak (470 nm) and double-peak (415 and 437 nm) PL structures of the as-deposited samples A and B were observed, respectively. Annealing strongly enhanced intensity of PL of the samples B and trandformed PL spectrum from double-peak into broad featureless band with intensity at about 470 nm. The blue PL in as-deposited films B is supposed to be assigned to the radiative recombination in the sites located at the nanocrystallite surface, whereas the photo excitation of carries mostly occurs in nanocrystallite cores. A further increase in annealing temperature causes hydrogen effusion, which leads to an increase of the concentration of non-raidative recombination centers associated with dangling-bonds and as a result, to the quenching of PL.

X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

2013 ◽  
Vol 31 (1) ◽  
pp. 01A105 ◽  
Author(s):  
Gilbère J. A. Mannie ◽  
Gijsbert Gerritsen ◽  
Hendrikus C. L. Abbenhuis ◽  
Joop van Deelen ◽  
J. W. (Hans) Niemantsverdriet ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Film ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
X Ray ◽  
Deposition Processes

Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 289-294 ◽  
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Bart Van Zeghbroeck
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Charge Carrier Density ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Hot Filament

ABSTRACTFor the first time, we are reporting the growth of high quality single crystalline 3C-SiC epitaxially on hexagonal silicon carbide substrates using Hot Filament Chemical Vapor Deposition (HF-CVD) on full 4” wafers. Rocking curve X-Ray diffraction (XRD) measurements resulted in a full width at half maximum (FWHM) as low as 88 arcsec for a 40 µm thick layer. We achieved this quality using a carefully optimized process making use of the additional degrees of freedom the hot filaments create. The filaments allow for precursor pre-cracking and a tuning of the vertical thermal gradient, which creates an improved thermal field compared to conventional Chemical Vapor Deposition. Growth rates of up to 8 µm/h were achieved with standard silane and propane chemistry, and further increased to 20 µm/h with chlorinated chemistry. The use of silicon carbide substrates promises superior layer quality compared to silicon substrates due to their better match in lattice parameters and thermal expansion coefficients. High resolution scanning electron microscopy, X-Ray rocking measurements, and micro-Raman allow us to assess the crystalline quality of our material and to compare it to layers grown on low-cost silicon substrates. Hall measurements reveal a linear increase of the charge carrier density in the material with the flow of nitrogen gas as a dopant. Electron densities above 10-18 cm-3 have been reached.

Initial growth stages of CeO2 nanosystems by Plasma-Enhanced Chemical Vapor Deposition

2002 ◽  
Vol 756 ◽  
Author(s):  
Davide Barreca ◽  
Alberto Gasparotto ◽  
Eugenio Tondello ◽  
Stefano Polizzi ◽  
Alvise Benedetti ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Precursor Film ◽  
Growth Stages ◽  
Initial Growth ◽  
X Ray ◽  
Synthesis Conditions

ABSTRACTNanocrystalline CeO2 thin films were synthesized by Plasma-Enhanced Chemical Vapor Deposition using Ce(dpm)4 as precursor. Film growth was accomplished at 150–300°C either in Ar or in Ar-O2 plasmas on SiO2 and Si(100) with the aim of studying the effects of substrate temperature and O2 content on coating characteristics. Film microstructure as a function of the synthesis conditions was investigated by Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM), while surface morphology was analyzed by Atomic Force Microscopy (AFM). Surface and in-depth chemical composition was studied by X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS).

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