Photo-Induced Growth of Low Dielectric Constant Porous Silica Film at Room Temperature

2000 ◽  
Vol 612 ◽  
Author(s):  
Jun-Ying Zhang ◽  
Ian W. Boyd
Keyword(s):  
Dielectric Constant ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Sol Gel ◽  
Porous Silica ◽  
Silica Film ◽  
Electrical Measurements ◽  
Processing Times ◽  
Low Dielectric ◽  
Stretching Vibration

AbstractWe report low temperature (25-200°C) photo-assisted sol-gel processing for the formation of porous silicon dioxide films on Si (100) substrates using 172 nm radiation from an excimer lamp. The effects of substrate temperature and irriadation time on the properties of the films formed have been studied using ellipsometry, Fourier transform infrared spectroscopy (FTIR), and electrical measurements. The FTIR spectra revealed the presence of a Si-O-Si stretching vibration peak at 1070 cm-1 after UV irradiation at 200°C. This is similar to that recorded for oxides grown by thermally oxidation of silicon at temperatures between 600-1000°C. Capacitance measurements indicated that the dielectric constant values of the films, found to be between 1.7-3.3, strongly depended on the substrate temperature during irradiation. Dielectric constant values as low as 1.7 were readily achievable at room temperature. These results show that the photochemical induced effects initiated by the UV radiation enable both reduced processing times and reduced processing temperatures to be used.

scholarly journals The roles of hydrophobic group on the surface of ultra low dielectric constant porous silica film during thermal treatment

2007 ◽  
Vol 515 (18) ◽  
pp. 7275-7280 ◽  
Author(s):  
Jen-Tsung Luo ◽  
Wen-Fa Wu ◽  
Hua-Chiang Wen ◽  
Ben-Zu Wan ◽  
Yu-Ming Chang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Thermal Treatment ◽  
Porous Silica ◽  
Silica Film ◽  
Low Dielectric Constant ◽  
Hydrophobic Group ◽  
Low Dielectric ◽  
Porous Silica Film

Photo-induced Large Area Growth Of Dielectrics With Excimer Lamps

2000 ◽  
Vol 617 ◽  
Author(s):  
Ian W. Boyd ◽  
Jun-Ying Zhang
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Low Temperature ◽  
Leakage Current ◽  
Sol Gel ◽  
Low Dielectric Constant ◽  
Large Area ◽  
Excimer Lamp ◽  
Low Dielectric ◽  
Current Densities

AbstractIn this paper, UV-induced large area growth of high dielectric constant (Ta2O5, TiO2and PZT) and low dielectric constant (polyimide and porous silica) thin films by photo-CVD and sol-gel processing using excimer lamps, as well as the effect of low temperature LW annealing, are discussed. Ellipsometry, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), UV spectrophotometry, atomic force microscope (AFM), capacitance-voltage (C-V) and current-voltage (I-V) measurements have been employed to characterize oxide films grown and indicate them to be high quality layers. Leakage current densities as low as 9.0×10−8 Acm−2 and 1.95×10−7 Acm−2 at 0.5 MV/cm have been obtained for the as-grown Ta2O5 films formed by photo-induced sol-gel processing and photo-CVD. respectively - several orders of magnitude lower than for any other as-grown films prepared by any other technique. A subsequent low temperature (400°C) UV annealing step improves these to 2.0×10−9 Acm−2 and 6.4× 10−9 Acm−2, respectively. These values are essentially identical to those only previously formed for films annealed at temperatures between 600 and 1000°C. PZT thin films have also been deposited at low temperatures by photo-assisted decomposition of a PZT metal-organic sol-gel polymer using the 172 nm excimer lamp. Very low leakage current densities (10−7 A/cm2) can be achieved, which compared with layers grown by conventional thermal processing. Photo-induced deposition of low dielectric constant organic polymers for interlayer dielectrics has highlighted a significant role of photo effects on the curing of polyamic acid films. I-V measurements showed the leakage current density of the irradiated polymer films was over an order of magnitude smaller than has been obtained in the films prepared by thermal processing. Compared with conventional furnace processing, the photo-induced curing of the polyimide provided both reduced processing time and temperature, A new technique of low temperature photo-induced sol-gel process for the growth of low dielectric constant porous silicon dioxide thin films from TEOS sol-gel solutions with a 172 nm excimer lamp has also been successfully demonstrated. The dielectric constant values as low as 1.7 can be achieved at room temperature. The applications investigated so far clearly demonstrate that low cost high power excimer lamp systems can provide an interesting alternative to conventional UV lamps and excimer lasers for industrial large-scale low temperature materials processing.

scholarly journals Synthesis and electrical characterization of Ca2Nd4Ti6O20 ceramics

2016 ◽  
Vol 34 (1) ◽  
pp. 164-168
Author(s):  
Raz Muhammad ◽  
Muhammad Uzair ◽  
M. Javid Iqbal ◽  
M. Jawad Khan ◽  
Yaseen Iqbal ◽  
...  
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Room Temperature ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Sintered Sample ◽  
First Time ◽  
Alkoxide Precursors ◽  
Room Temperature Dielectric Constant

AbstractCa2Nd4Ti6O20, a layered perov skite structured material was synthesized via a chemical (citrate sol-gel) route for the first time using nitrates and alkoxide precursors. Phase analysis of a sample sintered at 1625 °C revealed the formation of an orthorhombic (Pbn21) symmetry. The microstructure of the sample after sintering comprised rod-shaped grains of a size of 1.5 to 6.5µm. The room temperature dielectric constant of the sintered sample was 38 at 100 kHz. The remnant polarization (Pr) and the coercive field (Ec) were about 400 μC/cm2 and 8.4 kV/cm, respectively. Impedance spectroscopy revealed that the capacitance (13.7 pF) and activation energy (1.39 eV) of the grain boundary was greater than the capacitance (5.7 pF) and activation energy (1.13 eV) of the grain.

Sol–gel deposited xerogel, aerogel and porogen based porous low-k thin films: A comparative investigation

2021 ◽  
pp. 2140019
Author(s):  
Swati Gupta ◽  
Anil Gaikwad ◽  
Ashok Mahajan ◽  
Lin Hongxiao ◽  
He Zhewei
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Comparative Investigation ◽  
Crosstalk Noise ◽  
Nanoelectronic Devices ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Xerogel Films ◽  
Low K ◽  
Porosity Percentage

Low dielectric constant (Low-[Formula: see text]) films are used as inter layer dielectric (ILD) in nanoelectronic devices to reduce interconnect delay, crosstalk noise and power consumption. Tailoring capability of porous low-[Formula: see text] films attracted more attention. Present work investigates comparative study of xerogel, aerogel and porogen based porous low-[Formula: see text] films. Deposition of SiO2 and incorporation of less polar bonds in film matrix is confirmed using Fourier Transform Infra-Red Spectroscopy (FTIR). Refractive indices (RI) of xerogel, aerogel and porogen based low-[Formula: see text] films observed to be as low as 1.25, 1.19 and 1.14, respectively. Higher porosity percentage of 69.46% is observed for porogen-based films while for shrinked xerogel films, it is lowered to 45.47%. Porous structure of low-[Formula: see text] films has been validated by using Field Emission Scanning Electron Microscopy (FE-SEM). The pore diameters of porogen based annealed samples were in the range of 3.53–25.50 nm. The dielectric constant ([Formula: see text]) obtained from RI for xerogel, aerogel and porogen based films are 2.58, 2.20 and 1.88, respectively.

Stress Development in Low Dielectric Constant Silica Films During Drying and Heating Process

1999 ◽  
Vol 594 ◽  
Author(s):  
Mengcheng Lu ◽  
C. Jeffrey Brinker
Keyword(s):  
Dielectric Constant ◽  
Tensile Stress ◽  
Sol Gel ◽  
Low Dielectric Constant ◽  
Heating Process ◽  
Residual Tensile Stress ◽  
Silica Films ◽  
Stress Development ◽  
Low Dielectric

AbstractLow dielectric constant silica films are made using a surfactant templated sol-gel process (K∼2.5) or an ambient temperature and pressure aerogel process (K∼1.5). This paper will present the in-situ measurement and analysis of stress development during the making of these films, from the onset of drying till the end of heating. The drying stress is measured by a cantilever beam technique; the thermal stress is measured by monitoring the wafer curvature using a laser deflection method. During the course of drying, the surfactant templated films experience a low drying stress due to the influence of the surfactant on surface tension and extent of siloxane condensation. The aerogel films first develop a biaxial tensile stress due to solidification and initial drying. At the final stage of drying where the drying stress vanishes, dilation of the film recreates the porosity of the wet gel state, reducing the residual stress to zero. For the surfactant templated films, very small residual tensile stress remains after the heat treatment is finished (∼30MPa). Aerogel film has almost no measurable stress developed in the calcination process. In situ spectroscopic ellipsometry analysis during drying and heating, and TGA/DTA are all used to help understand the stress development.

Pyroelectric Properties of the Plt(10) Thin Film on the P-Doped Poly Silicon

1996 ◽  
Vol 433 ◽  
Author(s):  
Seong Jun Kang ◽  
Yung Sup Yoon ◽  
Dong Il Kim
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Curie Temperature ◽  
Room Temperature ◽  
Sol Gel ◽  
Pyroelectric Coefficient ◽  
Pyroelectric Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Poly Silicon

AbstractWe have studied the pyroelectric properties of the PLT(10) thin film deposited on a p-doped poly-Si electrode by using the sol-gel method. Measurement of the dielectric constant as a function of temperature shows the typical characteristics of a ferroelectric. The dielectric constant reaches a maximum at 295°C, which can be thought of as the Curie temperature. The PLT(10) thin film on p-doped poly-Si fabricated in this research shows excellent pyroelectric properties. The pyroelectric coefficient and the fiqures of merit, Fv and FD at room temperature are measured as 5.76 × 10−8 C/cm2 °C, 1.17 × 10−10C-cm/J and 0.93 × 10−8C-cm/J, respectively.

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

Study on the Dielectric Properties of Hybrid and Porous Polyimide-Silica Films

2008 ◽  
Vol 47-50 ◽  
pp. 973-976 ◽  
Author(s):  
Yi He Zhang ◽  
Qing Song Su ◽  
Li Yu ◽  
Hong Zheng ◽  
Hai Tao Huang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Silica Particles ◽  
Low Dielectric Constant ◽  
Hybrid Films ◽  
Porous Films ◽  
Silica Films ◽  
Low Dielectric ◽  
Dimethyl Acetamide ◽  
Sol Gel Process

A sol-gel process was used to prepare polyimide-silica hybrid films from the polyimide precursors and TEOS in N,N- dimethyl acetamide, then the hybrid film was treated with hydrofluoric acid to remove the dispersed silica particles, leaving pores with diameters between 80nm to 1µm, depending on the size of silica particles. The structure and dielectric constant of the hybrid and porous films were characterized by FTIR,SEM. The porous films displayed relatively low dielectric constant compared to the hybrid polyimide-silica films.

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