Heteroepitaxy of Gallium Arsenide on Germanium Coated Silicon Substrates

Vapor Deposition ◽

Silicon Substrate ◽

Surface Condition ◽

Chemical Vapor ◽

Silicon Substrates ◽

Deposition Technique ◽

Vapor Deposition Technique

ABSTRACTSingle crystalline epitaxial GaAs layers have been grown on silicon substrates with a thin germanium interlayer. All semiconductor layers were deposited by the chemical vapor deposition technique. The surface condition of the silicon substrate is an important factor affecting the quality of GaAs/Ge films on silicon. P+/n homojunction solar cells of 0.25 cm2 area with an AM1 efficiency near 12% have been prepared.

Study of Self-Induced Growth of AlGaAs Nanoneedles on Silicon Substrates Using Metal Organic Chemical Vapor Deposition Technique

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.11767 ◽

2016 ◽

Vol 16 (1) ◽

pp. 973-980

Author(s):

R. K. Bag ◽

S. Singh ◽

R. Tyagi ◽

D. K. Pandya ◽

R. Singh

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Silicon Substrates ◽

Deposition Technique ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Regular growth combined with lateral etching in diamond deposited over silicon substrate by using hot filament chemical vapor deposition technique

Applied Surface Science ◽

10.1016/j.apsusc.2013.02.124 ◽

2013 ◽

Vol 273 ◽

pp. 730-734 ◽

Cited By ~ 1

Author(s):

M. Ali ◽

M. Ürgen

Keyword(s):

Vapor Deposition ◽

Silicon Substrate ◽

Chemical Vapor ◽

Regular Growth ◽

Deposition Technique ◽

Hot Filament

Investigation of High Performance Perovskite-based Solar Cells Grown by Hybrid Chemical Vapor Deposition Technique

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) ◽

10.1109/pvsc.2017.8366307 ◽

2017 ◽

Author(s):

Huseyin Cem Gokkaya ◽

Shen Qian ◽

Zhiwei Ren ◽

Annie Ng ◽

Charles Surya

Keyword(s):

Solar Cells ◽

Vapor Deposition ◽

High Performance ◽

Chemical Vapor ◽

Deposition Technique ◽

Vapor Deposition Technique

Selected-area Deposition of Diamond Films on Silicon Nitride-coated Silicon Substrates Using Negatively Biased Microwave Plasma Enhanced Chemical Vapor Deposition Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6900 ◽

1997 ◽

Vol 36 (Part 1, No. 11) ◽

pp. 6900-6904 ◽

Cited By ~ 8

Author(s):

Yung-Hsin Chen ◽

Chen-Ti Hu ◽

I-Nan Lin

Keyword(s):

Silicon Nitride ◽

Vapor Deposition ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Silicon Substrates ◽

Deposition Technique ◽

Area Deposition

Effect of ferrocene concentration on the quality of multiwalled CNTs grown by floating catalytic chemical vapor deposition technique

Main Group Chemistry ◽

10.3233/mgc-140138 ◽

2014 ◽

Vol 13 (3) ◽

pp. 251-259 ◽

Cited By ~ 2

Author(s):

S. Shukrullah ◽

N.M. Mohamed ◽

M.S. Shaharun ◽

M.Y. Naz

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Technique ◽

Catalytic Chemical Vapor Deposition ◽

Multiwalled Cnts

Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽

10.3390/cryst10040237 ◽

2020 ◽

Vol 10 (4) ◽

pp. 237

Author(s):

M. Abul Hossion ◽

B. M. Arora

Keyword(s):

Vapor Deposition ◽

Polycrystalline Silicon ◽

Silicon Film ◽

Chemical Vapor ◽

Hot Wire ◽

Deposition Technique ◽

Boron Doped ◽

Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.