Consumables for the Chemical Mechanical Polishing (Cmp) of Dielectrics and Conductors

1994 ◽  
Vol 337 ◽  
Author(s):  
Rahul Jairath ◽  
Mukesh Desai ◽  
Matt Stell ◽  
Robert Tolles ◽  
Debra Scherber-Brewer
Keyword(s):  
Integrated Circuits ◽  
Chemical Mechanical Polishing ◽  
Large Scale ◽  
Dielectric Material ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Polished Surface ◽  
Polishing Pad ◽  
Dispersing Agent ◽  
Polishing Pressure

ABSTRACTChemical mechanical polishing (CMP) is rapidly becoming the process of choice for planarizing dielectrics in very large scale integrated circuits. In addition, it is being used at an increasing rate in the removal of metals in order to define conducting levels. In the case of dielectric CMP, planarization ability is dictated by the mechanical aspects of polishing such as pad rigidity, polishing pressure and speed of the polishing platen, while inherent removal rate of the dielectric material is generally a function of the polishing chemistry. Polishing rate of both, dielectric and metallic films can be significantly increased by changing the nature of the dispersed abrasive in the slurry and that of the dispersing agent. However, such changes have profound implications to the surface quality, planarity, and cleaning of the polished surface. In addition, the polishing pad plays an important role in manufacturability of metal CMP processes. This work reviews the chemistry of polishing slurries containing silica, ceria and alumina abrasives for dielectric and metal CMP. Also, the contribution of the polishing pad to CMP processes is explained. The need for balancing the chemical and mechanical aspects of polishing in order to achieve overall planarization and pattern definition is demonstrated.

A Method to Improve Uniformity of Material Removal of Chemical Mechanical Polishing in LCOS Process

2007 ◽  
Vol 364-366 ◽  
pp. 686-689 ◽  
Author(s):  
Yu Hui Sun ◽  
Ren Ke Kang ◽  
Dong Ming Guo
Keyword(s):  
Liquid Crystal ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Large Scale ◽  
Mixed Model ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Display Device ◽  
Asperity Contact ◽  
Polishing Pad

LCOS panel as a kind of new LCD is a sort of liquid crystal display device that operates in a reflective mode. In this paper, a method on realising planarization in large scale liquid crystal on silicon with chemical mechanical polishing (CMP) technology is discussed in detail. The nonuniform distributions of polishing pressure and the relative speed between the wafer and the polishing pad are main factors affecting the within-wafer non-uniformity. This research integrated a physical mixed model of chemical-mechanical polishing that combineed the effects of polishing pad roughness and slurry hydrodynamic pressure. Based on the contact mechanics and modified Reynolds equation, the asperity contact and fluid flow pressures were calculated. Taking into account the effects of kinematic parameters, the material removal rate(MRR) on silicon panel front surface was obtained. In the last section the design of a schematic carrier with multi-zone, in which the compensation back pressure can be applied, is presented. The model and the design can be used for providing theoretical guide to the development of CMP equipments and selection of the kinematic variables in CMP process.

Study on Chemical Mechanical Polishing Technology of Copper

2008 ◽  
Vol 373-374 ◽  
pp. 820-823
Author(s):  
Sheng Li Wang ◽  
Y.J. Yuan ◽  
Yu Ling Liu ◽  
X.H. Niu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Alkali Concentration ◽  
Copper Films ◽  
Optimum Conditions ◽  
Slurry Flow Rate ◽  
Polishing Pressure ◽  
Oxidizer Concentration

Chemical mechanical polishing (CMP) of copper films in alkaline slurries was investigated. In the copper CMP, the slurry was made by adding colloidal silica abrasive to de-ionized water.The organic alkali was added to adjust the pH, H2O2 was used as an oxidizer.The effects of varying polishing temperature, polishing pressure, slurry flow rate, organic alkali concentration and oxidizer concentration on removal rate were investigated in order to determine the optimum conditions for those parameters. It is shown the chemical composition of the slurry was 2%~3% oxidizer concentration, 3% organic alkali concentration and proper amount surfactant is reasonable. The solid concentration of the polishing slurry was fixed at 20% by weight. The removal rate of copper could reach 700nm/min and the surface roughness after CMP was 0.49nm.

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

Analysis of the Main Parameters in the Chemical Mechanical Polishing Process

2011 ◽  
Vol 317-319 ◽  
pp. 29-33 ◽  
Author(s):  
Xiang Dong Yang ◽  
Xin Wei ◽  
Xiao Zhu Xie ◽  
Zhuo Chen ◽  
Wei Bo Zou
Keyword(s):  
Surface Quality ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Rotation Speed ◽  
Removal Rate ◽  
Surface Damage ◽  
Mechanical Polishing ◽  
Technological Parameters ◽  
Polishing Pressure

This paper studies the chemical mechanical polishing (CMP) of the wafer's material such as stainless steel, monocrystalline silicon etc, and analyzes how the technological parameters’ impact on the final wafer’s surface material removal rate, surface quality and surface damage like the polishing pad’s speed and the wafer speed, polishing pressure and polishing time.The results show that: when the difference between the polishing pad's rotation speed and the wafer's rotation speed is small and their directions are the same , then the material removal rate of the wafer is larger.when the polishing pressure is selected between 5 to 6.5 kPa, the wafer surface's damage is smaller.The polishing time also play a very important role and affect the surface quality and surface damage of the wafer after polishing.

Effects of High Dielectric Constant Abrasives on ECMP

2011 ◽  
Vol 121-126 ◽  
pp. 3263-3267
Author(s):  
Wei Si Li ◽  
Dong Ming Guo ◽  
Zhu Ji Jin ◽  
Zhe Wang ◽  
Ze Wei Yuan
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Chemical Mechanical Polishing ◽  
High Dielectric Constant ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Polished Surface ◽  
Rutile Tio2 ◽  
Planarization Process ◽  
High Dielectric

ECMP (Electro-Chemical Mechanical Polishing) presents high removal rate, low polishing pressure and good polished surface because the action of electrochemistry accelerates copper dissolution. It is considered to be a most promising novel Cu planarization process to replace traditional CMP (Chemical Mechanical Polishing). However, the micro asperity heights of coarse surface are often too small compared to the distance between anode and cathode, so the asperities are difficult to be selectively removed. In this paper, high dielectric constant abrasives were used in ECMP to solve this problem. High dielectric constant abrasives can improve the distribution of electric field, amplify the gradient of electric field and enhance the ability of selective removal. Based on the results of experiments, rutile TiO2, as one of high dielectric constant abrasives, is better than SiO2 and anatase TiO2 in ECMP process. The material removal rate of electrolyte containing rutile TiO2 is 0.078mg/min, and the surface roughness is Ra18.2nm.

Modeling of Back Pressure Distribution on the Wafer Loaded in a Multi-Zone Carrier in Chemical Mechanical Polishing

2006 ◽  
Vol 532-533 ◽  
pp. 233-236 ◽  
Author(s):  
Yu Hui Sun ◽  
Ren Ke Kang ◽  
Dong Ming Guo
Keyword(s):  
Pressure Distribution ◽  
Chemical Mechanical Polishing ◽  
Plate Theory ◽  
Removal Rate ◽  
Back Pressure ◽  
Mechanical Polishing ◽  
Factors Affecting ◽  
Uniform Distributions ◽  
Polishing Pressure ◽  
Selection Of

The within-wafer non-uniformity (WIWNU) of material removal rate in chemical mechanical polishing (CMP) is important for IC manufacture. The non-uniform distributions of polishing pressure and the relative speed between the wafer and the polishing pad are main factors affecting the WIWNU. In this paper，based on the contact mechanics and the elastic plate theory, a compensate pressure computing model is presented, in which the effects of kinematic parameters are taken into acount. By modelling and calculating, the desired compensate back pressure distribution is obtained. In the last section the design of a schematic carrier with multi-zone, in which the compensate back pressure can be applied, is presented. The model and the design can be used for providing theoretical guide to the development of CMP equipments and selection of the kinematic variables in CMP process.

Effect of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing

2012 ◽  
Vol 497 ◽  
pp. 256-263 ◽  
Author(s):  
Michio Uneda ◽  
Yuki Maeda ◽  
Ken Ichi Ishikawa ◽  
Kazutaka Shibuya ◽  
Yoshio Nakamura ◽  
...  
Keyword(s):  
Quantitative Evaluation ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Contact Conditions ◽  
Surface Asperity ◽  
Actual Contact ◽  
Contact Points ◽  
Polishing Pad ◽  
Evaluation Parameters

In a chemical mechanical polishing (CMP) process, the removal rate is affected by the actual contact conditions between the wafer and the polishing pad. The polishing pad is one of the most important consumable materials: when the wafer is polished, the pad surface asperity changes. Further, the polishing pad surface asperity has a substantial influence on the actual contact conditions. Therefore, measurement and quantitative evaluation methods for the pad surface asperity have been proposed by various research institutes. We have developed a novel measurement and quantitative evaluation method for polishing pad surface asperity based on contact image analysis using an image rotation prism. We have proposed four effective evaluation parameters: the number of contact points, the contact ratio, the maximum value of the minimum spacing of the contact points, and the half-width of the peak of the spatial Fast Fourier transform (FFT) result of a contact image. This paper discusses the change in the polishing pad surface asperity measured by the proposed evaluation parameters in serial batch polishing tests. In particular, this research focused on the relationships between the proposed evaluation parameters and the removal rate, which change with an increase in the number of serial batch polishing tests. As a result, linear correlations were found between the evaluation parameters and the removal rate.

A Particle-Augmented Mixed Lubrication Modeling Approach to Predicting Chemical Mechanical Polishing

2008 ◽  
Vol 131 (1) ◽  
Author(s):  
Elon J. Terrell ◽  
C. Fred Higgs
Keyword(s):  
Integrated Circuits ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Abrasive Particle ◽  
Mixed Lubrication ◽  
Mechanical Polishing ◽  
Small Scale ◽  
Modeling Approach ◽  
Fitting Parameters

Chemical mechanical polishing (CMP) is a manufacturing process that is commonly used to planarize integrated circuits and other small-scale devices during fabrication. Although a number of models have been formulated, which focus on specific aspects of the CMP process, these models typically do not integrate all of the predominant mechanical aspects of CMP into a single framework. Additionally, the use of empirical fitting parameters decreases the generality of existing predictive CMP models. Therefore, the focus of this study is to develop an integrated computational modeling approach that incorporates the key physics behind CMP without using empirical fitting parameters. CMP consists of the interplay of four key tribological phenomena—fluid mechanics, particle dynamics, contact mechanics, and resulting wear. When these physical phenomena are all actively engaged in a sliding contact, the authors call this particle-augmented mixed lubrication (PAML). By considering all of the PAML phenomena in modeling particle-induced wear (or material removal), this model was able to predict wear-in silico from a measured surface topography during CMP. The predicted material removal rate (MRR) was compared with experimental measurements of copper CMP. A series of parametric studies were also conducted in order to predict the effects of varying slurry properties such as solid fraction and abrasive particle size. The results from the model are promising and suggest that a tribological framework is in place for developing a generalized first-principle PAML modeling approach for predicting CMP.

Tribological Aspects of Chemical Mechanical Polishing Diamond Surfaces

2011 ◽  
Vol 325 ◽  
pp. 464-469
Author(s):  
Zhu Ji Jin ◽  
Z.W. Yuan ◽  
Q. Li ◽  
K. Wang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Small Area ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Energy ◽  
Mechanical Polishing ◽  
Measuring System ◽  
Diamond Surfaces ◽  
Frictional System ◽  
Polishing Pressure

Mechanical energy may initiate and accelerate chemical reaction in chemical mechanical polishing (CMP). To study the effect of mechanical energy on the chemical reactions, a special friction measuring system was designed in this paper. The system could measure the local friction to reduce the error caused by resultant force. The effects of rotational speed, polishing pressure and the concentration of oxidant on friction and material removal rate were investigated. The results showed that the system could accurately measure the friction of small area diamond film in CMP process. The frictional system was in a mixed lubrication state since the value of the friction coefficient located in the range of 0.060~0.065.

Effect of Particle Size During Tungsten Chemical Mechanical Polishing

1999 ◽  
Vol 566 ◽  
Author(s):  
Marc Bielmann ◽  
Uday Mahajan ◽  
Rajiv K. Singh
Keyword(s):  
Particle Size ◽  
Surface Area ◽  
Contact Surface ◽  
Chemical Mechanical Polishing ◽  
Alumina Particle ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Polished Surface ◽  
Contact Surface Area ◽  
Effect Of Particle Size

Abrasive particle size plays a critical role in controlling the polishing rate and the surface roughness during chemical mechanical polishing (CMP) of interconnect materials during semiconductor processing. Earlier reports on the effect of particle size on polishing of silica show contradictory conclusions. We have conducted controlled measurements to determine the effect of alumina particle size during polishing of tungsten. Alumina particles of similar phase and shape with size varying from 0.1 μm to 10 μm diameter have been used in these experiments. The polishing experiments showed that the local roughness of the polished tungsten surfaces was insensitive to alumina particle size. The tungsten removal rate was found to increase with decreasing particle size and increased solids loading. These results suggest that the removal rate mechanism is not a scratching type process, but may be related to the contact surface area between particles and polished surface controlling the reaction rate. The concept developed in our work showing that the removal rate is controlled by the contact surface area between particles and polished surface is in agreement with the different explanations for tungsten removal.

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